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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN65D8LT-13

Name: DMN65D8LT-13
Brand: Diodes Incorporated
SKU: DMN65D8LT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN65D8LT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN65D8LT-13.pdf

Description:: MOSFET BVDSS: 41V~60V SOT523 T&R

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Product details

Overview

DMN65D8LT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 60V V_DSS, 5Ω R_DS(ON) @ 10V V_GS, and 210mA continuous drain current at +25°C - designed for low-power switching in space-constrained motor control and power management circuits.

For engineers reviewing the DMN65D8LT-13 datasheet, DMN65D8LT-13 pinout, DMN65D8LT-13 application, or DMN65D8LT-13 equivalent, key selection factors include gate threshold voltage (1.2–2.0V), low input capacitance (24pF C_iss), fast switching (2.0ns t_D(ON)), ESD protection (1kV HBM), and thermal resistance (351°C/W on high-copper PCB).

Technical Context

This MOSFET operates as a low-voltage, low-current single-N-channel switch with a gate threshold enabling logic-level drive from 3.3V/5V microcontrollers. Its 2.0–5.0Ω on-resistance range across 5–10V gate drive supports efficient operation in battery-powered load switching.

The device integrates a body diode with 210mA forward rating and exhibits low dynamic parameters: 0.4nC total gate charge, 0.14nC Q_gd, and 4.3ns turn-off fall time - optimized for minimal switching loss in high-frequency (<1MHz) duty-cycle-controlled applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - supports rail voltages up to 48V systems with margin against transients
R_DS(ON)	5.0Ω @ 10V V_GS - delivers ≤115mW conduction loss at 210mA, suitable for <300mW power stages
I_D (max)	210mA @ +25°C - defines maximum steady-state load current without derating on standard FR-4
C_iss	24pF - enables fast switching with low gate-drive energy demand from MCU GPIOs
t_D(ON)	2.0ns - ensures precise timing control in PWM-driven loads with minimal propagation delay
R_θJA	351°C/W - requires minimal copper area for thermal management in compact PCB layouts
V_GS(TH)	1.2–2.0V - guarantees reliable turn-on with 3.3V logic outputs without level-shifting

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic case (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts 0–20V V_GS; 1.2–2.0V threshold enables direct MCU drive; protected by integrated ESD diode
Source (S)	Reference node	Common return path for load current; tied to ground or low-side reference in high-side switch configurations
Drain (D)	Power output	Switches 60V loads; hosts body diode cathode; connects to load or supply rail depending on topology

Key Features

Feature	Design Value
Low gate threshold voltage	1.2–2.0V - eliminates need for external gate drivers when interfacing with 3.3V microcontrollers
Low input capacitance	24pF C_iss - reduces gate charge requirement to 0.4nC, minimizing drive power and switching transition time
Fast switching speed	2.0ns turn-on delay + 4.3ns fall time - supports PWM frequencies >500kHz with low overlap loss
ESD protection	1kV HBM - provides robustness against handling and board-level electrostatic discharge without external protection
Thermal performance	351°C/W R_θJA on 1"×1" 2oz Cu - allows operation up to +125°C ambient in compact designs without heatsinking

Applications

Brushless DC Fan Control

USB-C Power Path Switching

Use Scenario: Driving small BLDC fan coils in portable medical devices where board space and thermal budget are constrained.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling phase current in 3-phase commutation; synchronized to MCU PWM with sub-5ns timing precision.

Use Value: 5Ω R_DS(ON) limits coil heating to <120mW at 210mA, while 24pF C_iss ensures clean edge integrity at 20kHz commutation frequency.

Use Scenario: Enabling/disabling VBUS power delivery in USB-C accessories with strict 3.3V logic control and fault isolation.

IC Role / Device Role / Timing Role: Load switch isolating downstream 5V rail; controlled by system PMIC or MCU GPIO with 1.5V minimum drive capability.

Use Value: 1.2V V_GS(TH) guarantees turn-on at 3.3V logic levels; 1kV ESD rating protects against hot-plug transients on VBUS lines.

IoT Sensor Node Power Gating

LED Indicator Driver

Use Scenario: Power-gating non-critical sensors (e.g., humidity, motion) during deep-sleep cycles in battery-operated IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power switch disconnecting sensor supply rails; activated only during active measurement windows.

Use Value: 0.21A rating matches typical sensor peak draw; 0.4nC Q_g minimizes wake-up latency and energy per switching event.

Use Scenario: Driving status LEDs in industrial HMIs where current must be limited to 20mA with minimal component count.

IC Role / Device Role / Timing Role: Constant-current switch regulating LED brightness via PWM dimming; placed in series with LED anode or cathode.

Use Value: 6Ω R_DS(ON) @ 5V V_GS provides precise 20mA current limiting with ±5% tolerance across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	30V V_DSS, 2.6Ω R_DS(ON) @ 4.5V, SOT23 package	Lower voltage rating; higher current capability (3.5A); larger footprint	Select when higher current and lower R_DS(ON) are needed, and 30V system voltage suffices.
AO3400A	30V V_DSS, 0.028Ω R_DS(ON) @ 10V, SOT23 package	Higher current (5.7A), much lower on-resistance, but no 1kV ESD rating	Choose for high-efficiency, high-current switching where ESD robustness is secondary to conduction loss.

Compared with DMN3026LSD-13 and AO3400A, DMN65D8LT-13 trades off current capacity and on-resistance for ultra-compact size, 60V rating, and integrated 1kV ESD protection - making it optimal for space-limited, low-power, high-reliability signal-switching roles rather than power-stage switching.

Availability

DMN65D8LT-13 is available at Aetrix Electronics and suitable for motor control, USB-C power path management, and IoT sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for DMN65D8LT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for industrial, computing, consumer, and automotive markets.

The DMN65D8LT belongs to Diodes' low-voltage logic-level MOSFET product line, engineered for minimal board space and robust operation in battery-powered and thermally constrained applications.

FAQ

What is the maximum junction temperature for DMN65D8LT-13?

The absolute maximum junction temperature is +150°C, with continuous operation supported from –55°C to +150°C. Derating begins above +70°C ambient due to its 351°C/W thermal resistance on a 1"×1" 2oz copper PCB - full 210mA current is only guaranteed below +25°C ambient.

Can DMN65D8LT-13 be used in high-side switching configurations?

Yes - its 60V V_DSS and 20V V_GS rating allow use in high-side configurations with appropriate gate drive. However, a charge pump or level shifter is required to achieve ≥5V V_GS when the source is elevated above ground, as the gate threshold is referenced to source potential.

Does DMN65D8LT-13 have a built-in body diode, and what are its characteristics?

Yes - it includes an intrinsic body diode with 210mA maximum forward current and typical V_SD of ~0.85V at 210mA and +25°C. The diode is rated for reverse recovery in inductive switching, though no t_rr is specified; safe operating area curves confirm pulsed 0.7A capability with 10µs pulses.

Is DMN65D8LT-13 compliant with automotive qualification standards?

No - DMN65D8LT-13 is not AEC-Q101 qualified. It is intended for commercial and industrial applications. For automotive use, Diodes offers AEC-Q101-qualified variants like the DMP3028LSS, which share similar electrical specs but undergo additional stress testing and PPAP documentation.

DMN65D8LT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 24 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN65D8LT-13 FAQ

1.How can I place an order for DMN65D8LT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN65D8LT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN65D8LT-13 reliable?

The price and inventory of DMN65D8LT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LT-13 is usually 5 days.

3.What payment methods are accepted for DMN65D8LT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN65D8LT-13?

DMN65D8LT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN65D8LT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN65D8LT-13?

For technical support, including DMN65D8LT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LT-13 requirements.

6.How does Aetrix verify that DMN65D8LT-13 is sourced from the original manufacturer or authorized distributors?

All DMN65D8LT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LT-13 meets industry standards.

7.What is the process for return or replacement of DMN65D8LT-13?

All DMN65D8LT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN65D8LT-13 part is unused and in its original packaging.

Return procedure for DMN65D8LT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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