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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN65D8LT-7

Name: DMN65D8LT-7
Brand: Diodes Incorporated
SKU: DMN65D8LT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN65D8LT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN65D8LT-7.pdf

Description:: MOSFET BVDSS: 41V~60V SOT523 T&R

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN65D8LT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 60V V_DSS, 5Ω R_DS(ON) @ V_GS = 10V, and 210mA continuous drain current at +25°C. It features low gate threshold voltage (1.2–2.0V), fast switching speed, and ESD protection up to 1kV, targeting space-constrained power management and motor control circuits.

For engineers reviewing the DMN65D8LT-7 datasheet, DMN65D8LT-7 pinout, DMN65D8LT-7 application, or DMN65D8LT-7 equivalent, this device is selected for low-voltage, low-current switching where compact footprint, predictable turn-on behavior at 3.3V/5V logic, and thermal stability across -55°C to +150°C are critical design requirements.

Technical Context

This MOSFET operates as a single low-side switch with gate-driven enhancement-mode conduction. Its 1.2–2.0V V_GS(TH) enables reliable turn-on from standard logic outputs, while R_DS(ON) remains ≤6Ω at V_GS = 5V and ID = 115mA - supporting efficient operation in battery-powered loads.

Thermal performance is defined by R_θJA = 426°C/W (FR-4, min pad) and 351°C/W (enhanced 1"×1" 2oz copper), with total power dissipation limited to 300mW (min pad) or 360mW (enhanced layout). The integrated body diode supports bidirectional current in H-bridge or flyback configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands up to 60V drain-source voltage before breakdown, suitable for 24V and 36V rail applications.
R_DS(ON) @ V_GS = 10V	5Ω max - Ensures <115mW conduction loss at 210mA, minimizing self-heating in ambient-limited layouts.
R_DS(ON) @ V_GS = 5V	6Ω max - Enables full enhancement with 5V microcontroller GPIO without level-shifting.
I_D Continuous @ +25°C	210mA - Supports small-signal load switching such as LED drivers, sensor biasing, or fan control.
C_iss	24pF typ - Low input capacitance reduces gate drive energy and speeds up switching transitions.
Q_g	0.4nC typ - Enables fast turn-on with minimal gate driver current demand (e.g., <1mA peak at 1MHz).
T_J Range	-55°C to +150°C - Qualified for extended industrial and automotive under-hood environments.

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, lead-free and RoHS-compliant, weight ≈ 0.002 g.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Accepts 0–20V logic-level signal; threshold range 1.2–2.0V ensures compatibility with 3.3V/5V MCUs.
Source (S)	Reference node / return path	Internally tied to substrate; used as common reference for gate drive and load current return.
Drain (D)	Power output node	Connects to load high-side; carries switched current up to 210mA and withstands 60V transients.

Key Features

Feature	Design Value
Low R_DS(ON) at low V_GS	6Ω @ 5V - Reduces conduction loss in 3.3V/5V logic-driven systems without external gate boosting.
Fast switching with low Q_g	0.4nC total gate charge - Enables >1MHz PWM operation with minimal driver overhead and reduced switching loss.
ESD protection	1kV HBM - Eliminates need for external ESD clamps in handheld or board-level I/O interfaces.
Thermal robustness	R_θJA = 351°C/W on enhanced PCB - Allows sustained 210mA operation at +70°C ambient with simple layout.
Green packaging	Halogen- and antimony-free, RoHS 3 compliant - Meets strict environmental compliance for global industrial shipments.

Applications

LED Driver Control

Small DC Motor Switching

Use Scenario: Driving indicator LEDs or low-power status lights in portable instrumentation.

IC Role / Device Role / Timing Role: Low-side constant-current switch controlled directly by MCU GPIO.

Use Value: 210mA rating and 5Ω R_DS(ON) limit voltage drop to <1.1V at 200mA, preserving LED forward voltage margin.

Use Scenario: On/off control of miniature 3V–24V brushed DC motors in medical pumps or optical modules.

IC Role / Device Role / Timing Role: Single N-channel power switch enabling bidirectional control when paired with complementary device.

Use Value: Fast 2.0ns turn-on delay and 4.3ns fall time support precise PWM duty-cycle control down to 1% resolution.

Load Switch for Sensor Bias

Power Path Management

Use Scenario: Enabling/disabling analog sensor supply rails to reduce system standby current.

IC Role / Device Role / Timing Role: Low-leakage (≤1µA IDSS) high-side or low-side enable switch.

Use Value: Gate threshold of 1.2–2.0V ensures clean turn-off at 0V logic and full turn-on at 3.3V, eliminating floating-state risk.

Use Scenario: Isolating backup power domains (e.g., RTC or SRAM) from main supply during sleep mode.

IC Role / Device Role / Timing Role: Compact, thermally stable load switch managing power domain sequencing.

Use Value: SOT523 footprint saves >60% board area vs. SOT23, while 150°C T_J(max) supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-current N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	Lower V_DSS (20V), lower R_DS(ON) (1.4Ω @ 4.5V), higher I_D (600mA), same SOT523 package.	Better suited for 5V/3.3V logic loads requiring higher current or lower loss; not rated for 24V+ rails.	Select when operating below 20V and needing <100mΩ conduction resistance at 500mA.
AO3400A	Higher V_DSS (30V), lower R_DS(ON) (0.042Ω @ 10V), SOT23 package (larger footprint, higher thermal resistance).	Supports higher current (5.7A) but requires more PCB area and heatsinking; less suitable for ultra-compact designs.	Choose when >500mA load current is required and board space allows SOT23 mounting.

Compared with DMN2004LK-7 and AO3400A, the DMN65D8LT-7 uniquely balances 60V capability, sub-6Ω R_DS(ON) at 5V drive, and SOT523 miniaturization - making it optimal for space-constrained, medium-voltage, low-current switching where thermal headroom and logic-level compatibility are jointly critical.

Availability

DMN65D8LT-7 is available at Aetrix Electronics and suitable for motor control, LED driver circuits, and sensor biasing applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMN65D8LT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN65D8LT-7 belongs to Diodes' low-voltage, low-R_DS(ON) MOSFET product line, engineered specifically for compact, energy-efficient power switching in portable, industrial, and automotive-qualified systems.

FAQ

Is DMN65D8LT-7 suitable for 3.3V GPIO direct drive?

Yes. With a gate threshold voltage of 1.2–2.0V and guaranteed turn-on at V_GS = 3.3V, the DMN65D8LT-7 fully enhances at standard 3.3V logic levels. Its R_DS(ON) remains ≤6Ω at V_GS = 5V and ID = 115mA, ensuring low-loss operation without external level-shifting circuitry.

What is the maximum safe continuous current at +70°C ambient?

At +70°C ambient temperature, the DMN65D8LT-7 supports 170mA continuous drain current per the datasheet's derating curve. This accounts for thermal resistance (R_θJA = 426°C/W on minimum pad) and junction temperature limit of +150°C, assuming no additional heatsinking.

Does DMN65D8LT-7 include an integrated body diode?

Yes. As a standard silicon MOSFET, it incorporates a parasitic body diode between source and drain (anode at source, cathode at drain). This diode supports freewheeling current in inductive loads and is characterized with 0.6V forward voltage at 210mA and 25°C, as shown in Figure 9 of the datasheet.

Can DMN65D8LT-7 be used in automotive applications?

The DMN65D8LT-7 is not AEC-Q101 qualified. While its -55°C to +150°C operating range meets automotive temperature requirements, Diodes Incorporated explicitly states that automotive-grade versions require PPAP-capable, IATF 16949-certified production and AEC-Q101 qualification - which this variant does not carry. Use only in non-safety-critical, non-automotive applications unless requalified.

DMN65D8LT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 24 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN65D8LT-7 FAQ

1.How can I place an order for DMN65D8LT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN65D8LT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN65D8LT-7 reliable?

The price and inventory of DMN65D8LT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LT-7 is usually 5 days.

3.What payment methods are accepted for DMN65D8LT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN65D8LT-7?

DMN65D8LT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN65D8LT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN65D8LT-7?

For technical support, including DMN65D8LT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LT-7 requirements.

6.How does Aetrix verify that DMN65D8LT-7 is sourced from the original manufacturer or authorized distributors?

All DMN65D8LT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LT-7 meets industry standards.

7.What is the process for return or replacement of DMN65D8LT-7?

All DMN65D8LT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN65D8LT-7 part is unused and in its original packaging.

Return procedure for DMN65D8LT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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