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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN65D9L-13

Name: DMN65D9L-13
Brand: Diodes Incorporated
SKU: DMN65D9L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN65D9L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN65D9L-13.pdf

Description:: MOSFET BVDSS: 41V-60V SOT23

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Product details

Overview

DMN65D9L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V_DSS, 4.0Ω R_DS(ON) @ V_GS = 10V, and 335mA continuous drain current at +25°C. It delivers low on-resistance with fast switching speed and ESD protection, deployed in compact backlighting circuits and motor control stages of portable electronics.

For engineers reviewing the DMN65D9L-13 datasheet, DMN65D9L-13 pinout, DMN65D9L-13 application, or DMN65D9L-13 equivalent, key selection criteria include its 60V breakdown voltage, gate threshold range (1.0–2.5V), thermal resistance (293°C/W), low input capacitance (41pF), and SOT23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This MOSFET operates as a low-voltage, low-current switching device optimized for efficiency in battery-powered systems. Its 1.0–2.5V gate threshold enables direct drive from 3.3V logic, while R_DS(ON) remains stable across −55°C to +150°C junction temperature.

Dynamic performance is defined by 0.4nC total gate charge, 3.7ns turn-on delay, and 102ns turn-off delay under 30V/200mA conditions. The integrated body diode supports bidirectional current flow with 0.8–1.1V forward voltage at 115mA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands up to 60V drain-source voltage before avalanche conduction begins.
R_DS(ON)	4.0Ω @ V_GS = 10V - Enables <335mA continuous load current with ≤1.34W conduction loss at full rating.
I_D (max)	335mA @ T_A = +25°C - Maximum steady-state drain current under standard FR-4 mounting conditions.
C_iss	41pF - Low input capacitance reduces gate drive power and improves high-frequency switching efficiency.
Q_g	0.4nC - Minimal gate charge allows fast turn-on using low-current drivers like microcontroller GPIOs.
R_θJA	293°C/W - Thermal resistance measured on minimum-pad FR-4 board; dictates maximum ambient temperature for safe operation.
V_GS(TH)	1.0–2.5V - Gate threshold ensures reliable turn-on with 3.3V logic while avoiding false triggering near ground.

Pinout & Package

SOT23-3 surface-mount package with 0.915mm lead pitch, 2.40mm body length, and matte tin-plated alloy 42 leadframe. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for drain-to-source conduction	Connected to system ground or low-side reference; forms common node with body diode cathode.
2 (Gate)	Control terminal for channel formation	High-impedance input requiring <±10µA leakage; driven directly by 3.3V/5V logic without level shifting.
3 (Drain)	Power input terminal for controlled load connection	Carries switched load current; routed to higher potential node (e.g., LED anode or motor winding).

Key Features

Feature	Design Value
Low R_DS(ON)	4.0Ω @ 10V enables >90% efficiency in 3.3V/100mA backlight driver applications.
ESD protection	HBM-rated per JEDEC JS-001; eliminates need for external transient suppressors in handheld designs.
Fast switching	3.7ns t_D(ON) and 22ns t_F support PWM dimming above 100kHz without audible noise.
Green packaging	Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets IEC 61249-2-21.
Thermal stability	R_DS(ON) increases only 1.6× from −55°C to +150°C at V_GS = 5V, ensuring consistent performance across environments.

Applications

LED Backlight Control

Small DC Motor Drive

Use Scenario: Driving white LEDs in portable displays with PWM dimming at 200Hz–20kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling current path through LED string.

Use Value: 4.0Ω R_DS(ON) limits conduction loss to <13.4mW at 200mA, reducing thermal load on thin PCBs.

Use Scenario: Bidirectional control of vibration motors in wearables via H-bridge half-bridge configuration.

IC Role / Device Role / Timing Role: N-channel switch in low-side leg of discrete H-bridge.

Use Value: Fast 22ns fall time enables precise 10µs pulse-width control for haptic feedback timing accuracy.

Load Switch for USB Peripherals

Power Sequencing in IoT Sensors

Use Scenario: Enabling/disabling 5V USB-powered sensors during sleep mode to reduce quiescent current.

IC Role / Device Role / Timing Role: High-efficiency load switch isolating downstream circuitry.

Use Value: 1.0µA max I_DSS and ±10µA I_GSS ensure <1µA off-state leakage, preserving battery life over months.

Use Scenario: Controlled power-up sequence for multi-rail sensor nodes with separate analog/digital supplies.

IC Role / Device Role / Timing Role: Delayed enable switch triggered by MCU GPIO after reset stabilization.

Use Value: 1.0–2.5V V_GS(TH) allows direct 1.8V/3.3V GPIO control without external bias networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN65D8L-7	Same die, but rated for 4.5Ω R_DS(ON) @ V_GS = 4.5V; slightly higher threshold (1.2–2.8V).	Marginally lower efficiency in 3.3V gate-drive scenarios; identical thermal and package specs.	Select when tighter R_DS(ON) tolerance at 4.5V is required, or for legacy design reuse.
AO3400	Higher R_DS(ON) (4.3Ω @ 10V), larger C_iss (65pF), and no specified ESD rating.	Less suitable for high-frequency PWM or ESD-sensitive handheld enclosures.	Choose only if cost is primary constraint and ESD robustness is not required in final assembly environment.

Compared with DMN65D9L-13, DMN65D8L-7 trades marginal R_DS(ON) increase for broader gate threshold tolerance, while AO3400 sacrifices ESD protection and switching speed for wider distributor availability-making DMN65D9L-13 optimal for space- and reliability-critical portable designs.

Availability

DMN65D9L-13 is available at Aetrix Electronics and suitable for LED backlight control, small DC motor drive, and load switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.

Supply support for DMN65D9L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.

This device belongs to Diodes' "PowerMOS" portfolio targeting space-constrained, battery-operated systems where low R_DS(ON), fast switching, and ESD resilience are critical for end-product reliability.

FAQ

What is the maximum continuous drain current for DMN65D9L-13 at +70°C ambient?

The maximum continuous drain current drops to 268mA at T_A = +70°C under standard FR-4 mounting (293°C/W R_θJA). This derating reflects thermal limits-not electrical failure-and assumes no heatsinking beyond minimum pad layout per datasheet Figure 5.

Does DMN65D9L-13 require a gate resistor for 3.3V MCU GPIO drive?

No external gate resistor is required for basic on/off switching with 3.3V GPIO, as V_GS(TH) (1.0–2.5V) ensures full enhancement and Q_g (0.4nC) is low enough for typical MCU output drive strength. A 10–100Ω resistor may be added only to damp ringing in high-dI/dt layouts.

Is the body diode in DMN65D9L-13 suitable for reverse recovery in flyback configurations?

Yes-the body diode has t_RR = 20ns and Q_RR = 7.9nC at 1A/100A/µs, making it appropriate for low-energy flyback snubbing and synchronous rectification in low-power DC-DC converters below 5W.

Can DMN65D9L-13 be used in automotive applications?

DMN65D9L-13 is not AEC-Q101 qualified. For automotive use, Diodes offers the pin-compatible DMN65D9LQ-13 variant-qualified to AEC-Q101, PPAP-capable, and manufactured in IATF 16949-certified facilities-with identical electrical specs and enhanced process controls.

DMN65D9L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 335mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.4 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 270mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN65D9L-13 FAQ

1.How can I place an order for DMN65D9L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN65D9L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN65D9L-13 reliable?

The price and inventory of DMN65D9L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D9L-13 is usually 5 days.

3.What payment methods are accepted for DMN65D9L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D9L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN65D9L-13?

DMN65D9L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN65D9L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN65D9L-13?

For technical support, including DMN65D9L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D9L-13 requirements.

6.How does Aetrix verify that DMN65D9L-13 is sourced from the original manufacturer or authorized distributors?

All DMN65D9L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D9L-13 meets industry standards.

7.What is the process for return or replacement of DMN65D9L-13?

All DMN65D9L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D9L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN65D9L-13 part is unused and in its original packaging.

Return procedure for DMN65D9L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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