My Inquiry
My Account
Diodes Incorporated DMN66D0LDWQ-13
- Part No.:
- DMN66D0LDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN66D0LDWQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.217A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:9,200
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN66D0LDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 5 Ω RDS(ON) @ VGS = 10 V, and 217 mA continuous drain current at +25°C. It features ESD-protected gates, low gate threshold (1.2–2.0 V), and fast switching (tD(ON) = 3.7 ns), designed specifically for automotive load-switch applications requiring AEC-Q101 qualification.
For engineers reviewing the DMN66D0LDWQ-13 datasheet, DMN66D0LDWQ-13 pinout, DMN66D0LDWQ-13 application, or DMN66D0LDWQ-13 equivalent, this page delivers verified electrical parameters, validated SOT363 terminal mapping, AEC-Q101-compliant use context, and direct alternatives with documented RDS(ON), VGS(TH), and thermal resistance differences.
Technical Context
This dual MOSFET integrates two independent N-channel devices in one compact SOT363 package, each with separate gate, source, and drain terminals - no shared internal connection. Its low 1.2–2.0 V gate threshold enables reliable turn-on from 3.3 V and 5 V logic rails, while low input capacitance (Ciss = 29.3 pF) supports high-speed digital switching in space-constrained automotive modules.
The device operates across –55°C to +150°C junction temperature range and delivers stable on-resistance over temperature (RDS(ON) increases <1.8× from 25°C to 150°C at VGS = 10 V). Thermal resistance RθJA is 310 °C/W on FR-4 PCB with minimum pad layout, confirming suitability for thermally constrained body control units and sensor interface circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 12 V automotive battery systems with ≥4× voltage margin against load-dump transients. |
| RDS(ON) @ VGS = 10 V | 2.3–5 Ω - Enables ≤115 mA load current with <0.575 V conduction drop, minimizing power loss in always-on circuits. |
| RDS(ON) @ VGS = 5 V | 2.1–6 Ω - Ensures functional switching from standard 5 V microcontroller GPIO without level-shifting. |
| VGS(TH) | 1.2–2.0 V - Guarantees robust turn-on at 3.3 V logic levels, reducing risk of partial conduction in low-voltage domains. |
| Ciss | 29.3 pF - Limits gate drive energy requirement to <0.3 nC at 4.5 V, easing integration with low-current MCU outputs. |
| PD (FR-4, min pad) | 0.40 W - Allows 217 mA continuous operation at ambient ≤+70°C without heatsinking in standard PCB layouts. |
| TJ Range | –55°C to +150°C - Meets under-hood and cabin module temperature requirements per AEC-Q101 stress test profile. |
Pinout & Package
SOT363 surface-mount package: 6-pin, dual-row, lead-free matte tin finish on alloy 42 leadframe; UL 94V-0 molded plastic case; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2; connects to load or supply rail. |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to ground or common reference; not internally connected to S2. |
| G1 | Gate of Channel 1 | CMOS-compatible control input; includes integrated ESD protection diode to S1 and D1. |
| D2 | Drain of Channel 2 | Independent switch node for second load; no internal connection to D1 or other pins. |
| S2 | Source of Channel 2 | Separate return path for Channel 2; enables dual independent load switching in single footprint. |
| G2 | Gate of Channel 2 | Isolated control input with same ESD protection structure as G1; supports asynchronous channel control. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two fully isolated MOSFETs in one SOT363 - reduces board area by 40% vs. discrete SOT23 solutions for dual-load control. |
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| Low VGS(TH) with tight distribution | 1.2–2.0 V max ensures >99.5% turn-on yield across temperature and process variation using 3.3 V MCU drivers. |
| ESD-protected gate terminals | Integrated gate-body diodes withstand ≥2 kV HBM - eliminates need for external TVS in most infotainment and body-control PCB layouts. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - satisfies EU ELV Directive and OEM sustainability requirements without performance trade-off. |
Applications
| Body Control Module Load Switching | Automotive Sensor Power Gating |
|---|---|
|
Use Scenario: Controlling power to door lock actuators, interior lighting, and window motor drivers in BCMs. IC Role / Device Role / Timing Role: Dual-channel low-side switch enabling independent enable/disable of two 12 V resistive/inductive loads. Use Value: Eliminates need for two separate SOT23-6 MOSFETs; reduces BOM count and routing congestion while maintaining AEC-Q101 compliance. |
Use Scenario: Sequencing power to radar, camera, and LIN bus sensors during vehicle startup and sleep transitions. IC Role / Device Role / Timing Role: Precision-controlled load switch with fast tF = 5.3 ns ensuring clean power ramp-up and hold-off timing. Use Value: Prevents sensor brown-out during wake-up by delivering stable 12 V rail with <0.6 V dropout at 200 mA load. |
| Infotainment System USB Port Protection | Engine Control Unit (ECU) Diagnostic Interface |
|
Use Scenario: Isolating USB VBUS from main system rail during hot-plug events and fault conditions in head units. IC Role / Device Role / Timing Role: Dual N-MOSFET used as back-to-back configuration for bidirectional overcurrent blocking. Use Value: Leverages matched RDS(ON) channels (≤10% mismatch) to achieve symmetrical forward/reverse conduction with <1 V total drop. |
Use Scenario: Enabling/disabling diagnostic CAN or K-line communication paths between ECU and service tools. IC Role / Device Role / Timing Role: High-reliability load switch isolating diagnostic circuitry from main ECU power domain. Use Value: Withstands 150°C junction temperature and 60 V transients - ensures uninterrupted diagnostics during engine cranking and load dump. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN66D0LWQ-7 | Same die, identical RDS(ON), VGS(TH), and thermal specs; differs only in tape-and-reel packaging (3,000 pcs vs. 10,000 pcs). | No functional difference; suitable for lower-volume prototyping or small-batch production where reel size matters. | Select when matching existing SMT line feed configuration or optimizing initial inventory cost per unit. |
| DMN6016LFG-7 | Higher VDSS (60 V same), but lower RDS(ON) (1.5 Ω @ 10 V), higher ID (300 mA), and larger SOT563 package (1.6 × 1.6 mm vs. 2.2 × 1.35 mm). | Better for higher-current loads (>250 mA); requires PCB redesign due to different footprint and thermal pad layout. | Choose only if load current exceeds 217 mA and board space allows SOT563; not drop-in compatible. |
Compared with DMN66D0LDWQ-13, DMN66D0LWQ-7 offers identical electrical performance in smaller reel quantity, while DMN6016LFG-7 trades compactness for higher current capability and requires mechanical redesign - making the -13 variant optimal for space-limited AEC-Q101 dual-load switching at ≤217 mA.
Availability
DMN66D0LDWQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, sensor power management, infotainment USB isolation, and ECU diagnostic interface designs requiring stable component supply, AEC-Q101 compliance, and SOT363 footprint consistency.
Supply support for DMN66D0LDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN66D0LDWQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for robust, low-power load switching in harsh-temperature environments with strict change control and PPAP documentation.
FAQ
Is DMN66D0LDWQ-13 qualified for automotive use?
Yes - it is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. Its –55°C to +150°C operating range, 60 V VDSS, and ESD-protected gates meet automotive load-switch reliability requirements for body electronics and sensor interfaces.
What is the maximum continuous drain current per channel?
The maximum continuous drain current is 217 mA per channel at TA = +25°C with VGS = 10 V. At +70°C ambient, it derates to 174 mA per channel. This rating assumes mounting on FR-4 PCB with minimum recommended pad layout per datasheet Figure 5.
Can DMN66D0LDWQ-13 be used in back-to-back configuration for USB VBUS isolation?
Yes - its matched dual N-channel structure and low RDS(ON) mismatch (<10%) enable effective bidirectional blocking in back-to-back configuration. Combined forward voltage drop remains below 1 V at 200 mA, satisfying USB 2.0 power integrity requirements without additional level-shifting.
Does the SOT363 package include thermal pad or exposed drain?
No - the SOT363 package uses standard leadframe construction with no exposed thermal pad. Thermal dissipation relies on copper traces connected to S1/S2 pads; RθJA is specified as 310 °C/W on FR-4 with minimum pad layout, and improves to 264 °C/W with 1-inch² copper pour per datasheet Note 6.
DMN66D0LDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 217mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 115mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 29.3pF @ 25V
- Power - Max:
- 400mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN66D0LDWQ-13 FAQ
1.How can I place an order for DMN66D0LDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN66D0LDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN66D0LDWQ-13 reliable?
The price and inventory of DMN66D0LDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN66D0LDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN66D0LDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN66D0LDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN66D0LDWQ-13?
DMN66D0LDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN66D0LDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN66D0LDWQ-13?
For technical support, including DMN66D0LDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN66D0LDWQ-13 requirements.
6.How does Aetrix verify that DMN66D0LDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN66D0LDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN66D0LDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN66D0LDWQ-13?
All DMN66D0LDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN66D0LDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN66D0LDWQ-13 part is unused and in its original packaging.
Return procedure for DMN66D0LDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN66D0LDWQ-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
