Diodes Incorporated DMN66D0LDWQ-7
- Part No.:
- DMN66D0LDWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN66D0LDWQ-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.115A SOT363
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMN66D0LDWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive load switching, featuring 60 V VDSS, 2.3 Ω RDS(ON) @ 10 VGS, and 217 mA continuous drain current at +25°C in SOT363 package.
For engineers reviewing the DMN66D0LDWQ-7 datasheet, DMN66D0LDWQ-7 pinout, DMN66D0LDWQ-7 application, or DMN66D0LDWQ-7 equivalent, this part supports low-voltage, space-constrained automotive power control where low gate threshold (1.2–2.0 V), fast switching (tD(ON) = 3.7 ns), and ESD-protected gates are critical.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SOT363 package, each with independent gate, source, and drain terminals and on-chip gate protection diodes. Its low 1.2–2.0 V gate threshold enables direct drive from 3.3 V or 5 V microcontrollers without level shifting.
The device delivers 2.3 Ω RDS(ON) at VGS = 10 V and 5 Ω at VGS = 5 V, with Ciss = 29.3 pF and Qg = 0.9 nC (VGS = 10 V), supporting high-efficiency, low-power switching in battery-fed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 48 V automotive supply rails with margin against transients. |
| RDS(ON) @ 10 VGS | 2.3 Ω max - Enables <100 mW conduction loss at 200 mA load current. |
| VGS(TH) | 1.2–2.0 V - Ensures reliable turn-on from standard logic-level outputs (3.3 V/5 V). |
| Ciss | 29.3 pF - Minimizes gate drive energy and improves switching efficiency in low-power apps. |
| tD(ON) | 3.7 ns - Reduces transition time losses in high-frequency PWM load control. |
| PD (FR-4, 2 oz Cu) | 0.47 W - Allows operation up to +70°C ambient without heatsinking in compact PCB layouts. |
| ESD Rating | HBM ±2 kV - Integrated gate protection eliminates need for external TVS in most board-level ESD environments. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount plastic package (0.95 mm height, 2.15 mm × 2.10 mm footprint), moisture sensitivity level 1, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to substrate tie point. |
| G1 | Gate of Channel 1 | Control input with integrated ESD protection diode to S1 and D1. |
| D1 | Drain of Channel 1 | High-side switch node; rated for 60 V blocking and 217 mA continuous current. |
| D2 | Drain of Channel 2 | Independent high-side node; electrically isolated from D1, enabling dual-load control. |
| G2 | Gate of Channel 2 | Second independent control input with dedicated ESD protection diode to S2 and D2. |
| S2 | Source of Channel 2 | Separate return path for second channel; allows floating or independently biased configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side or high-side switches in one footprint-reducing BOM count and PCB area by 50% vs. discrete solutions. |
| AEC-Q101 qualification & PPAP support | Validated for automotive use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| Low 5 Ω RDS(ON) @ 5 VGS | Permits direct interface with 5 V MCU GPIOs without gate drivers-cutting system cost and component count. |
| 29.3 pF input capacitance | Reduces required gate drive current and minimizes switching losses in 100 kHz–1 MHz PWM applications. |
| ESD-protected gates (HBM ±2 kV) | Eliminates need for external gate protection components in typical automotive ESD environments (IEC 61000-4-2 Level 3). |
Applications
| Body Control Module Load Switching | Automotive LED Interior Lighting |
|---|---|
|
Use Scenario: Controlling door lock actuators, mirror heaters, and seat position motors in BCMs. IC Role / Device Role / Timing Role: Dual low-side switch managing two independent 12 V resistive/inductive loads. Use Value: 2.3 Ω RDS(ON) limits voltage drop to <500 mV at 200 mA, preserving actuator torque and thermal margin. |
Use Scenario: Dimmable cabin lighting using PWM-driven white LEDs (12 V supply, 100–200 mA per string). IC Role / Device Role / Timing Role: High-speed low-side current sink enabling >10 kHz PWM dimming without audible noise. Use Value: 3.7 ns tD(ON) and 5.3 ns tF ensure clean edge fidelity and minimal duty-cycle distortion. |
| Engine Control Unit Sensor Power Gating | ADAS Camera Power Sequencing |
|
Use Scenario: Enabling/disabling 5 V sensor supplies (e.g., pressure, temperature) during engine sleep modes. IC Role / Device Role / Timing Role: Precision-controlled power rail switch with fast turn-off to minimize leakage during shutdown. Use Value: 1 µA IDSS max ensures <1 µW standby power loss-critical for meeting ISO 21848 quiescent current targets. |
Use Scenario: Sequenced power-up of image sensor, ISP, and interface ICs in rear-view or surround-view cameras. IC Role / Device Role / Timing Role: Dual independent enable switches coordinating power ramp timing between analog and digital domains. Use Value: Matched channel parameters (RDS(ON), VGS(TH)) guarantee consistent sequencing window across temperature (-40°C to +125°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN66D0LWQ-7 | Same die, but in SOT26 package (larger thermal resistance: RθJA = 350°C/W vs. 264°C/W). | Lower power density; suitable only for <150 mA continuous loads at +70°C ambient. | Select when legacy SOT26 footprint compatibility is required and thermal budget permits. |
| NTJD4152PZ-1 | Higher RDS(ON) (12 Ω @ 4.5 VGS), lower VDSS (20 V), no AEC-Q101 qualification. | Restricted to non-automotive 3.3 V logic-level applications; not PPAP-capable. | Choose only for cost-sensitive consumer-grade designs where automotive reliability is not mandated. |
Compared with DMN66D0LDWQ-7, the SOT26 variant trades thermal performance for footprint compatibility, while the NTJD4152PZ-1 sacrifices automotive qualification and on-resistance for lower unit cost in non-critical applications.
Availability
DMN66D0LDWQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting subsystems, and ADAS camera power sequencing requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle assurance.
Supply support for DMN66D0LDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for robust, space-efficient load switching in harsh-temperature, high-reliability vehicle subsystems.
FAQ
Is DMN66D0LDWQ-7 suitable for high-side switching configurations?
No-DMN66D0LDWQ-7 is optimized for low-side switching due to its N-channel architecture and lack of integrated charge pump or bootstrap circuitry. For high-side use, an external gate driver with floating supply or P-channel alternative (e.g., DMN601WKQ) is required. The datasheet specifies only low-side SOA curves and does not characterize high-side bias conditions.
What is the maximum allowable pulsed drain current, and under what conditions is it valid?
The pulsed drain current is 0.6 A, defined for 10 µs pulse width at 1% duty cycle. This rating assumes junction temperature remains below 150°C and is validated on FR-4 PCB with 2 oz copper and 1-inch² copper pour. Exceeding 10 µs or increasing duty cycle requires derating per Figure 12's SOA curve and transient thermal resistance data (Figure 13).
Does the ESD protection cover both human-body model and machine model testing?
The datasheet specifies HBM (Human Body Model) ESD rating of ±2 kV per ANSI/ESDA/JEDEC JS-001. No machine model (MM) or charged-device model (CDM) rating is published. Designers must rely on board-level protection for MM/CDM events unless additional characterization data is obtained directly from Diodes Incorporated's quality team.
Can both channels be paralleled to increase current capacity?
No-channels are not characterized for parallel operation. Mismatch in VGS(TH) (±0.4 V typical) and RDS(ON) (±20%) leads to unequal current sharing and potential thermal runaway. The datasheet provides no derating guidance or test data for paralleling, and AEC-Q101 qualification applies only to individual channel operation.
DMN66D0LDWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Tc)
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 115mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 29.3pF @ 25V
- Power - Max:
- 400mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN66D0LDWQ-7 FAQ
1.How can I place an order for DMN66D0LDWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN66D0LDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN66D0LDWQ-7 reliable?
The price and inventory of DMN66D0LDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN66D0LDWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN66D0LDWQ-7?
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DMN66D0LDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN66D0LDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN66D0LDWQ-7?
For technical support, including DMN66D0LDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN66D0LDWQ-7 requirements.
6.How does Aetrix verify that DMN66D0LDWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN66D0LDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN66D0LDWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN66D0LDWQ-7?
All DMN66D0LDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN66D0LDWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN66D0LDWQ-7 part is unused and in its original packaging.
Return procedure for DMN66D0LDWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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