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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN67D8L-13

Name: DMN67D8L-13
Brand: Diodes Incorporated
SKU: DMN67D8L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN67D8L-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN67D8L-13.pdf

Description:: MOSFET N-CH 60V 210MA SOT23

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Product details

Overview

DMN67D8L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V_DSS, 5Ω R_DS(ON) @ V_GS = 10V, and 230mA continuous drain current at +25°C. It delivers low gate threshold voltage (1.0–2.5V), fast switching (t_D(ON) = 2.8ns), and low input capacitance (C_iss = 22pF), enabling efficient power management in space-constrained DC-DC converters and motor drivers.

For engineers reviewing the DMN67D8L-13 datasheet, DMN67D8L-13 pinout, DMN67D8L-13 application, or DMN67D8L-13 equivalent, key selection criteria include verified R_DS(ON) at 5V drive, thermal resistance (R_θJA = 376°C/W on FR-4), body diode forward voltage (V_SD = 0.78V @ 115mA), and AEC-Q101 readiness for industrial control modules.

Technical Context

This discrete MOSFET operates as a low-voltage, low-current single-ended switch with enhancement-mode gate control. Its 1.0–2.5V V_GS(TH) enables direct interface with 3.3V/5V logic, while normalized R_DS(ON) variation ≤1.8× over −55°C to +150°C ensures stable conduction across wide temperature ranges.

The device integrates a monolithic body diode with 0.78V typical forward drop at 115mA and exhibits 361pC total gate charge at V_GS = 4.5V - optimized for minimal drive power in high-frequency PWM circuits operating up to 1MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - supports 24V rail systems with 150% safety margin against transients
R_DS(ON)	5.0Ω @ V_GS = 10V - delivers <115mW conduction loss at 150mA load
I_D (max)	230mA @ T_A = +25°C - suitable for signal-level load switching and bias control
V_GS(TH)	1.0–2.5V - ensures reliable turn-on with standard microcontroller GPIOs
C_iss	22pF - limits gate drive current demand in 500kHz–1MHz switching applications
t_D(ON)	2.8ns - enables precise timing control in synchronous rectification and PWM dimming
P_D	340mW on FR-4 - defines maximum dissipation without heatsinking in compact layouts

Pinout & Package

Package: SOT23 (Standard), surface-mount, 3-terminal plastic case per JEDEC TO-236AB. Dimensions: 2.90 × 1.30 × 1.03 mm (L × W × H); weight ≈ 0.008 g; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; requires low-impedance PCB pour for thermal and EMI control
2 (Gate)	Control electrode for channel formation	High-impedance input; 120Ω gate resistance minimizes ringing in unbuffered drive
3 (Drain)	Main current output terminal	Connected to load/high-side node; exposed pad not present - no thermal pad in SOT23 variant

Key Features

Feature	Design Value
Low R_DS(ON) at 5V drive	7.5Ω @ V_GS = 5V - enables full enhancement using 5V microcontrollers without level-shifting
Fast switching speed	t_F = 5.6ns - reduces transition losses in high-frequency (>500kHz) DC-DC topologies
Low gate charge	Q_g = 361pC @ V_GS = 4.5V - lowers average gate drive power to <15µW at 100kHz
Green compound packaging	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) - meets IPC-1752A Class 2 reporting

Applications

Motor Control

Power Management

Use Scenario: Driving small brushed DC motors in portable medical pumps and HVAC damper actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed modulation at 20–50kHz.

Use Value: 5Ω R_DS(ON) limits I²R loss to <17.5mW at 60mA stall current, extending battery life in coin-cell-powered devices.

Use Scenario: Load switching in USB-powered IoT sensor nodes with always-on monitoring circuitry.

IC Role / Device Role / Timing Role: Enable/disable power to RF transceivers and analog front-ends during sleep cycles.

Use Value: 1.0V minimum V_GS(TH) guarantees turn-on with weak 3.3V GPIOs, eliminating need for external level shifters.

LED Bias Control

Signal-Level Switching

Use Scenario: Constant-current LED biasing in automotive interior lighting modules with PWM dimming.

IC Role / Device Role / Timing Role: High-side current sink for 20mA indicator LEDs driven by MCU PWM outputs.

Use Value: 0.78V V_SD ensures predictable forward voltage drop during reverse recovery, stabilizing dimming linearity.

Use Scenario: Signal routing in programmable logic interfaces between FPGA I/O banks and peripheral sensors.

IC Role / Device Role / Timing Role: Bidirectional analog/digital signal pass gate controlled by enable logic.

Use Value: 22pF C_iss and 2.8ns t_D(ON) preserve signal integrity up to 100MHz data rates with <1% jitter contribution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 3.5Ω @ V_GS = 4.5V; higher ID (350mA); same SOT23 package	Better suited for higher-current loads (>250mA) where lower conduction loss is critical	Select when system current exceeds 200mA and thermal headroom is limited
AO3400	R_DS(ON) = 43mΩ @ V_GS = 10V; 5.7A rating; SO-23 package but different pinout (G-D-S vs D-G-S)	Requires PCB layout revision due to reversed drain/gate pin assignment	Choose only if board redesign is feasible and >500mA peak current is required

Compared with DMN2004LK-7 and AO3400, the DMN67D8L-13 provides optimal balance of ultra-low gate threshold, proven reliability in space-constrained industrial modules, and compatibility with legacy SOT23 footprints - making it preferred for 3.3V/5V logic-driven sub-250mA switching where pinout retention and thermal predictability are mandatory.

Availability

DMN67D8L-13 is available at Aetrix Electronics and suitable for motor control, power management, and LED bias applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for DMN67D8L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.

The DMN67D8L belongs to Diodes' "PowerMOS" portfolio, engineered specifically for energy-efficient, footprint-sensitive switching in portable, industrial, and automotive subsystems where low gate drive voltage and thermal stability are essential.

FAQ

What is the maximum safe operating junction temperature for DMN67D8L-13?

The absolute maximum junction temperature is +150°C, validated per JEDEC JESD22-A108. Derating begins at +85°C ambient: continuous drain current drops linearly from 230mA at +25°C to 170mA at +85°C, based on thermal resistance R_θJA = 376°C/W on standard FR-4 PCB.

Does DMN67D8L-13 have AEC-Q101 qualification?

DMN67D8L-13 is not pre-qualified to AEC-Q101, but Diodes offers automotive-grade variants (e.g., DMN67D8LQ-13) with PPAP documentation, IATF 16949 manufacturing, and stress-tested reliability data. Standard DMN67D8L-13 is rated for industrial temperature range (−55°C to +150°C) and used in non-safety-critical automotive subsystems per customer qualification.

Can DMN67D8L-13 be used in linear (analog) mode operation?

No - this MOSFET is characterized and specified only for switching operation. Its Safe Operating Area (SOA) curve (Figure 12) shows pulsed capability only up to 10ms at 230mA/60V; DC linear use risks thermal runaway due to positive R_DS(ON) temperature coefficient and lack of SOA derating data for analog bias conditions.

What is the recommended PCB pad layout for thermal performance?

Use the manufacturer-recommended SOT23 pad layout: 2.0 × 0.8 mm copper pads for pins 1–3, with 1.35 mm spacing (X1), 0.9 mm width (Y), and 2.9 mm length (Y1). Avoid thermal relief on source pad; connect directly to internal ground plane for optimal R_θJA = 376°C/W performance per Note 5 in DS38024 Rev. 2-2.

DMN67D8L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 22 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 340mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN67D8L-13 FAQ

1.How can I place an order for DMN67D8L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN67D8L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN67D8L-13 reliable?

The price and inventory of DMN67D8L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN67D8L-13 is usually 5 days.

3.What payment methods are accepted for DMN67D8L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN67D8L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN67D8L-13?

DMN67D8L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN67D8L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN67D8L-13?

For technical support, including DMN67D8L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN67D8L-13 requirements.

6.How does Aetrix verify that DMN67D8L-13 is sourced from the original manufacturer or authorized distributors?

All DMN67D8L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN67D8L-13 meets industry standards.

7.What is the process for return or replacement of DMN67D8L-13?

All DMN67D8L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN67D8L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN67D8L-13 part is unused and in its original packaging.

Return procedure for DMN67D8L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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