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Diodes Incorporated DMN67D8LDW-13
- Part No.:
- DMN67D8LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN67D8LDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.23A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:6,779
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Product details
Overview
DMN67D8LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 5.0Ω RDS(ON) @ VGS = 10V (230mA ID), and qualified to AEC-Q101 for automotive reliability. It delivers low gate threshold (1.0–2.5V), fast switching (tD(ON) = 2.8ns), and ultra-small footprint for space-constrained power management.
For engineers reviewing the DMN67D8LDW-13 datasheet, DMN67D8LDW-13 pinout, DMN67D8LDW-13 application, or DMN67D8LDW-13 equivalent, key selection criteria include dual-channel integration in SOT363, low-voltage gate drive compatibility (VGS(th) down to 1.0V), body diode forward voltage (0.78V typ), thermal resistance (RθJA = 400°C/W), and AEC-Q101 qualification for motor control and battery-powered systems.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source configuration per channel (S1/D1/G1 and S2/D2/G2), enabling compact half-bridge or load-switch topologies. Its low RDS(ON) at 5V gate drive (7.5Ω) supports 3.3V/5V logic-level control without level-shifting.
The device features low input capacitance (Ciss = 22pF), low gate charge (Qg = 361pC @ 4.5V), and fast switching transitions (tR = 3.0ns, tF = 5.6ns), minimizing switching losses in high-frequency DC-DC converters and PWM-driven motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Maximum drain-source blocking voltage before avalanche conduction begins; enables use in 24V and 48V industrial bus systems. |
| RDS(ON) max | 5.0Ω @ VGS = 10V, ID = 0.5A - On-resistance determines conduction loss and junction temperature rise under steady-state load. |
| ID max (TA = 25°C) | 230mA - Continuous drain current rating with derating above 25°C; defines maximum safe DC load per channel. |
| VGS(th) | 1.0–2.5V - Gate threshold voltage range ensures reliable turn-on with 3.3V microcontroller GPIOs without external biasing. |
| Ciss | 22pF - Input capacitance affects gate drive strength requirement and switching speed; low value reduces driver IC loading. |
| Qg (4.5V) | 361pC - Total gate charge required to switch device; directly impacts switching energy loss and driver power dissipation. |
| RθJA | 400°C/W - Junction-to-ambient thermal resistance on FR-4 PCB with minimum pad layout; used to calculate ΔTJ under given PD. |
Pinout & Package
SOT363 is a 6-pin ultra-small surface-mount package (2.15 × 2.10 × 0.95 mm) with dual N-channel MOSFETs in a common-source configuration per channel. Pin 1 = S1, Pin 2 = D1, Pin 3 = G1, Pin 4 = G2, Pin 5 = D2, Pin 6 = S2 (top view, left-to-right).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Source of Channel 1 | Common return path for first MOSFET; tied to ground or low-side reference in half-bridge designs. |
| Pin 2 (D1) | Drain of Channel 1 | High-side connection point for Channel 1; carries switched load current and withstands up to 60V. |
| Pin 3 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires <2.5V to fully enhance; low Ciss eases driving from MCU pins. |
| Pin 4 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; enables synchronous dual-load switching or complementary drive. |
| Pin 5 (D2) | Drain of Channel 2 | Second high-side output node; electrically isolated from D1 but shares same package thermal mass. |
| Pin 6 (S2) | Source of Channel 2 | Return path for Channel 2; may be connected separately or paralleled with S1 depending on topology. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one SOT363 package reduce board area by >40% vs. discrete solutions and improve layout symmetry. |
| Low VGS(th) range | 1.0–2.5V enables direct drive from 1.8V/3.3V logic without gate drivers-critical for ultra-low-power sensor nodes. |
| Ultra-low Ciss and Qg | 22pF Ciss and 361pC Qg @ 4.5V minimize gate drive power and allow >1MHz PWM operation with minimal loss. |
| AEC-Q101 qualification | Qualified for automotive applications including engine control modules and body electronics requiring extended temperature (-55°C to +150°C) and reliability validation. |
| Green, lead-free packaging | SOT363 uses halogen- and antimony-free molding compound (Br+Cl <1500ppm, Sb <1000ppm) meeting RoHS 2 and JEDEC MSL Level 1 standards. |
Applications
| Brushless DC Motor Driver | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Driving low-current BLDC commutation phases in small fans or cooling pumps where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Dual N-MOSFET provides half-bridge upper/lower switches per phase leg; operates with 3.3V MCU PWM signals. Use Value: Low RDS(ON) at 5V gate drive (7.5Ω) reduces conduction loss; fast switching (tF = 5.6ns) minimizes dead-time distortion and improves torque linearity. |
Use Scenario: Enabling/disabling VBUS paths in portable USB-C accessories requiring bidirectional fault protection and low quiescent current. IC Role / Device Role / Timing Role: Dual-channel load switch isolates downstream ports during hot-plug events; body diode supports reverse current blocking. Use Value: Ultra-low IGSS (<100nA) prevents leakage-induced battery drain; AEC-Q101 qualification ensures robustness across temperature cycling in mobile environments. |
| Automotive LED Headlamp Dimming | Industrial Sensor Node Power Gating |
|
Use Scenario: PWM dimming of low-power LED arrays in automotive interior lighting, requiring ESD-hardened, AEC-compliant switching. IC Role / Device Role / Timing Role: Each channel independently controls separate LED strings; gate threshold allows direct MCU GPIO control. Use Value: Low VSD (0.78V typ) minimizes forward drop in body-diode fallback mode during PWM off-cycles; MSL Level 1 supports reflow assembly without baking. |
Use Scenario: Power gating of RF transceivers and analog front-ends in battery-operated IIoT sensors to extend multi-year battery life. IC Role / Device Role / Timing Role: Dual switch isolates subsystems during sleep mode; low IDSS (<1.0µA) prevents standby current leakage. Use Value: RDS(ON) stability over -55°C to +150°C (Figure 6) ensures consistent shutdown resistance across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN67D8LW-7 | Same die, identical electrical specs, but packaged in 3000-piece tape-and-reel (vs. 10,000 for -13); SOT363 footprint and pinout identical. | No functional difference; suited for lower-volume prototyping or smaller production runs. | Select -7 for evaluation or pilot builds; -13 preferred for high-volume manufacturing due to larger reel size and cost-per-unit advantage. |
| NTZD3154CT1G | Higher RDS(ON) (12Ω @ 4.5V), higher VGS(th) (1.5–2.5V), larger SOT-563 package (2.2 × 2.2 mm), no AEC-Q101 qualification. | Lacks automotive qualification and thermal performance; suitable only for commercial-grade consumer products. | Choose only if AEC-Q101 is not required and board space allows larger footprint; avoid for automotive or industrial deployments. |
Compared with DMN67D8LDW-13, the -7 variant offers identical performance in smaller reels for flexibility, while NTZD3154CT1G trades qualification and efficiency for broader distributor availability-making DMN67D8LDW-13 optimal for AEC-Q101–mandated, space-limited, low-voltage gate-drive applications.
Availability
DMN67D8LDW-13 is available at Aetrix Electronics and suitable for motor control, USB-C power delivery, automotive LED dimming, and industrial sensor node power gating requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN67D8LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN67D8LDW belongs to Diodes' AEC-Q101–qualified small-signal MOSFET product line, engineered for high-efficiency, low-voltage power switching in automotive, industrial, and portable electronics where space, thermal, and reliability constraints dominate.
FAQ
What is the maximum continuous drain current per channel at 70°C ambient?
The DMN67D8LDW-13 supports 180mA continuous drain current per channel at TA = +70°C, as specified in the Absolute Maximum Ratings table (Note 6). This reflects thermal derating from the 230mA rating at 25°C, based on 1"×1" FR-4 PCB with 2oz copper.
Does this part support 1.8V logic-level gate drive?
No-while the gate threshold voltage starts as low as 1.0V, full enhancement (RDS(ON) ≤ 5.0Ω) requires VGS ≥ 10V per the Product Summary. At 1.8V, the device remains in weak inversion with RDS(ON) > 100Ω; it is not a true 1.8V logic-level MOSFET.
Can the two channels be used in parallel to increase current handling?
Not recommended-channels are not internally matched for current sharing; thermal coupling and parameter variation (e.g., VGS(th) spread) cause uneven current distribution. Parallel operation risks thermal runaway and violates SOA limits shown in Figure 12.
Is the body diode rated for continuous forward conduction?
Yes-the maximum continuous body diode forward current IS is rated at 0.5A, verified under conditions matching the SOA curve (Figure 12). However, VSD = 0.78V (typ) at IS = 115mA implies significant self-heating at higher currents; sustained operation above 200mA requires thermal analysis.
DMN67D8LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 230mA
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 320mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN67D8LDW-13 FAQ
1.How can I place an order for DMN67D8LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN67D8LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN67D8LDW-13 reliable?
The price and inventory of DMN67D8LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN67D8LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN67D8LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN67D8LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN67D8LDW-13?
DMN67D8LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN67D8LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN67D8LDW-13?
For technical support, including DMN67D8LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN67D8LDW-13 requirements.
6.How does Aetrix verify that DMN67D8LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN67D8LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN67D8LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN67D8LDW-13?
All DMN67D8LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN67D8LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN67D8LDW-13 part is unused and in its original packaging.
Return procedure for DMN67D8LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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