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Diodes Incorporated DMN67D8LDW-7

Part No.:
DMN67D8LDW-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN67D8LDW-7.pdf
Description:
MOSFET 2N-CH 60V 0.23A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,400

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Product details

Overview

DMN67D8LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 5.0Ω RDS(ON) @ 10V VGS (230mA ID), and qualified to AEC-Q101 for automotive reliability. It delivers low gate threshold (1.0–2.5V), fast switching (tD(ON) = 2.8ns), and ultra-small footprint for space-constrained power management.

For engineers reviewing the DMN67D8LDW-7 datasheet, DMN67D8LDW-7 pinout, DMN67D8LDW-7 application, or DMN67D8LDW-7 equivalent, key selection criteria include dual-channel RDS(ON) matching at 5V/10V drive, thermal resistance (RθJA = 400°C/W on FR-4), and AEC-Q101 qualification for motor control and battery-powered systems.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing no internal connection-each channel operates independently with separate gate, source, and drain terminals. Its low 1.0–2.5V VGS(TH) enables direct interfacing with 3.3V and 5V logic controllers without level-shifting.

The device uses planar silicon technology optimized for low Ciss (22pF) and Crss (2.5pF), supporting high-frequency PWM operation up to several MHz. Thermal performance is defined for two mounting conditions: 320mW PD with RθJA = 400°C/W (minimum pad layout) and 410mW PD with RθJA = 312°C/W (enhanced 1"×1" 2oz copper).

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS60V - supports 24V and 48V rail applications with 20%+ voltage margin
RDS(ON) max5.0Ω @ VGS = 10V - ensures <115mW conduction loss at 230mA DC load
ID max (TA=25°C)230mA - suitable for low-power motor gate drivers and LED current sinks
VGS(TH)1.0–2.5V - compatible with 3.3V microcontroller GPIO without external driver
Ciss22pF - enables clean 10MHz-class switching with minimal gate drive power
RθJA400°C/W - requires minimal PCB copper area for thermal management in compact layouts
AEC-Q101Qualified - validated for automotive temperature range (−55°C to +150°C) and humidity robustness

Pinout & Package

SOT363 (SC-88) ultra-small surface-mount package: 6-pin, 1.8×2.2mm body, 0.65mm pitch, matte tin-plated leadframe, RoHS-compliant and halogen-free.

Pin/TerminalCircuit RoleDesign Meaning
S1Source of Channel 1Low-side return path for first MOSFET; internally unconnected to other pins
D1Drain of Channel 1High-side switching node for first channel; connects to load or supply rail
G1Gate of Channel 1CMOS-compatible control input; 120Ω gate resistance limits ringing
S2Source of Channel 2Independent return path for second MOSFET; electrically isolated from S1
D2Drain of Channel 2Second independent switching node; supports dual-load or H-bridge half-bridge use
G2Gate of Channel 2Separate logic-level control input; no internal coupling to G1

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables compact dual-switching functions (e.g., dual load switch or half-bridge top/bottom) without cross-talk
Low RDS(ON) at 5V VGS7.5Ω - allows full 190mA drive from standard 5V logic, reducing need for gate drivers
Low input capacitanceCiss = 22pF - minimizes gate charge (Qg = 361pC @ 4.5V), easing 3.3V MCU drive capability
Fast switching speedtD(ON) = 2.8ns, tF = 5.6ns - supports >5MHz PWM in Class-D audio or DC-DC control loops
AEC-Q101 qualificationValidated for automotive ambient temperatures and mechanical shock/vibration per JESD22 standards

Applications

Brushless DC Motor Gate DriverUSB-C Power Delivery Load Switch

Use Scenario: Driving high-side and low-side gates in 3-phase BLDC inverter stages for small fans or pumps.

IC Role / Device Role / Timing Role: Dual-channel discrete switch providing synchronous gate control with matched turn-on characteristics.

Use Value: 7.5Ω RDS(ON) @ 5V enables direct MCU GPIO drive; 2.8ns tD(ON) ensures precise phase timing alignment across channels.

Use Scenario: Enabling/disabling VBUS paths in USB-C PD sink applications with overcurrent protection.

IC Role / Device Role / Timing Role: Dual independent load switch controlling upstream/downstream power rails with independent enable control.

Use Value: Independent S1/D1/G1 and S2/D2/G2 terminals allow separate control of CC logic and VCONN paths without shared-source constraints.

Portable Medical Sensor Power SequencerIndustrial IoT Node Battery Management

Use Scenario: Sequencing power to analog front-end, ADC, and wireless transceiver blocks in wearable ECG monitors.

IC Role / Device Role / Timing Role: Dual low-leakage (IDSS ≤ 1.0µA) switch enabling precise power-up sequencing and standby isolation.

Use Value: 1.0–2.5V VGS(TH) ensures reliable turn-on from 1.8V LDOs; −55°C to +150°C rating supports sterilization cycles.

Use Scenario: Isolating backup supercapacitor charging circuit from main Li-ion battery during deep sleep modes.

IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and load-disconnect switch protecting against battery reversal and leakage.

Use Value: Body diode VF = 0.78V (typ) at 115mA enables efficient bidirectional energy transfer; 60V rating covers 4S Li-ion stack transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN67D8LW-7Single-channel version in same SOT363 package; identical RDS(ON), V(BR)DSS, and VGS(TH)Used where only one switch is needed per footprint; no dual-channel coordination requiredSelect when design requires only one switch and board space permits duplication for redundancy
NTJD4152PT1GHigher RDS(ON) = 8.5Ω @ 4.5V; lower ID = 170mA; same SOT-363 package and AEC-Q101 ratingTargeted at cost-sensitive automotive sensors where lower current and higher on-resistance are acceptableChoose for legacy designs already using NTJD4152P; verify thermal margin at 170mA continuous load

Compared with DMN67D8LDW-7, DMN67D8LW-7 reduces channel count but retains identical per-channel specs-ideal for modular layout reuse-while NTJD4152PT1G trades 1.5× higher RDS(ON) for broader distributor availability and longer production lifetime.

Availability

DMN67D8LDW-7 is available at Aetrix Electronics and suitable for motor control, USB-C power delivery, portable medical sensor sequencing, and industrial IoT battery management requiring stable component supply and AEC-Q101 assurance.

Supply support for DMN67D8LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN67D8LDW-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for space-constrained automotive and industrial power management where low-voltage logic compatibility and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

At TA = +70°C, the maximum continuous drain current per channel is 180mA when mounted on FR-4 PCB with minimum recommended pad layout. This derating reflects thermal limitations under steady-state conduction, not transient pulse capability. The device supports 0.5A pulsed body diode current and 0.8A pulsed drain current for short durations.

Does DMN67D8LDW-7 support 3.3V logic-level gate drive?

Yes-its gate threshold voltage range of 1.0–2.5V ensures reliable turn-on with 3.3V logic signals. At VGS = 3.3V, typical RDS(ON) is ~4.2Ω (interpolated from Figure 3), delivering ~150mA continuous current with <100mW conduction loss. No external level shifter is required for most 3.3V MCU applications.

How are the two MOSFET channels isolated within the SOT363 package?

The two N-channel MOSFETs share no internal electrical connection: S1/D1/G1 and S2/D2/G2 form two fully independent circuits. Pinout diagrams confirm physical separation-no common source, drain, or substrate tie. This enables true dual-switch operation, including floating half-bridge configurations when used with external bootstrap or isolated gate drivers.

Is the body diode forward voltage specified for both channels?

Yes-VSD is specified as 0.78V (typ) at IS = 115mA and VGS = 0V, applying identically to both channels. The body diode exhibits consistent forward conduction behavior across temperature (−55°C to +150°C), with VF increasing to ~1.5V at 115mA under worst-case conditions, as shown in Figure 9.

DMN67D8LDW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
230mA
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
22pF @ 25V
Power - Max:
320mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN67D8LDW-7 FAQ

1.How can I place an order for DMN67D8LDW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN67D8LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN67D8LDW-7 reliable?

The price and inventory of DMN67D8LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN67D8LDW-7 is usually 5 days.

3.What payment methods are accepted for DMN67D8LDW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN67D8LDW-7 transactions.

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4.How is shipping managed for DMN67D8LDW-7?

DMN67D8LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN67D8LDW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN67D8LDW-7?

For technical support, including DMN67D8LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN67D8LDW-7 requirements.

6.How does Aetrix verify that DMN67D8LDW-7 is sourced from the original manufacturer or authorized distributors?

All DMN67D8LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN67D8LDW-7 meets industry standards.

7.What is the process for return or replacement of DMN67D8LDW-7?

All DMN67D8LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN67D8LDW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN67D8LDW-7 part is unused and in its original packaging.

Return procedure for DMN67D8LDW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN67D8LDW-7 Tags

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