Diodes Incorporated DMN67D8LT-13

Overview

DMN67D8LT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 60V V_DSS, 5.0 Ω R_DS(ON) at V_GS = 10 V, and 210 mA continuous drain current at T_A = +25°C. It delivers low on-resistance with fast switching speed and low input capacitance (C_iss = 22 pF), targeting space-constrained power management and motor control circuits.

For engineers reviewing the DMN67D8LT-13 datasheet, DMN67D8LT-13 pinout, DMN67D8LT-13 application, or DMN67D8LT-13 equivalent, key selection criteria include its 60 V breakdown voltage, gate threshold range (1.0–2.5 V), thermal resistance (R_θJA = 497 °C/W on FR-4), SOT523 footprint compatibility, and suitability for low-current load switching in portable electronics.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate threshold voltage of 1.0–2.5 V, enabling direct drive from 3.3 V or 5 V logic. Its R_DS(ON) drops to 3.2 Ω typical at V_GS = 10 V and ID = 0.5 A, while maintaining low dynamic losses via C_iss = 22 pF and Q_g = 821 pC at V_GS = 10 V.

Thermally, it supports operation from −55°C to +150°C junction temperature, with 260 mW steady-state power dissipation on standard FR-4 PCB and R_θJA = 366 °C/W under enhanced copper layout. The integrated body diode exhibits V_SD = 0.78 V typical at I_S = 115 mA and V_GS = 0 V.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.55 mm), moisture sensitivity level 1, lead-free and RoHS-compliant, weight ≈ 0.002 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN67D8LT-13, DMN67D8LW-7 trades miniaturization for thermal robustness, while NX100P03-13 sacrifices voltage headroom for lower on-resistance at logic-level gate drive-making each viable only within distinct voltage, layout, and thermal constraints.

Availability

DMN67D8LT-13 is available at Aetrix Electronics and suitable for motor control, USB power switching, and IoT sensor node power gating requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN67D8LT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN67D8LT belongs to Diodes' low-voltage power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion, load switching, and gate driving in portable and battery-powered systems.

FAQ

What is the maximum gate-source voltage rating for DMN67D8LT-13?

The absolute maximum gate-source voltage (V_GS) is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks irreversible gate oxide damage. For reliable operation, gate drive should be limited to 10 V or less, especially in noisy environments where ringing could cause overshoot.

Can DMN67D8LT-13 be used in automotive applications?

DMN67D8LT-13 is not AEC-Q101 qualified and lacks PPAP documentation or IATF 16949-certified manufacturing traceability per the datasheet note. It may be used in non-safety-critical automotive subsystems only after full qualification by the end customer; Diodes recommends contacting their automotive team for qualified alternatives.

How does R_DS(ON) vary with temperature?

R_DS(ON) increases with junction temperature: normalized resistance rises to ~2.2× at 150°C vs. 25°C for V_GS = 10 V (Figure 6). At 125°C, R_DS(ON) is approximately 1.8× room-temperature value-designers must derate current accordingly to maintain thermal stability.

Is the body diode suitable for reverse polarity protection?

The intrinsic body diode has V_SD = 0.78 V typical at 115 mA and supports up to 210 mA continuous forward current. While usable for basic reverse polarity protection, its forward voltage and lack of soft recovery make it unsuitable for high-efficiency or high-frequency flyback applications-external Schottky diodes are preferred for such use cases.