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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN67D8LT-7

Name: DMN67D8LT-7
Brand: Diodes Incorporated
SKU: DMN67D8LT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN67D8LT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN67D8LT-7.pdf

Description:: MOSFET BVDSS: 41V 60V SOT523 T&R

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN67D8LT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 60V V_DSS, 5.0 Ω R_DS(ON) @ 10 V_GS, and 210 mA continuous drain current at +25°C. It delivers low on-resistance with fast switching speed and low input capacitance (22 pF C_iss), enabling high-efficiency power management in space-constrained portable electronics.

For engineers reviewing the DMN67D8LT-7 datasheet, DMN67D8LT-7 pinout, DMN67D8LT-7 application, or DMN67D8LT-7 equivalent, key selection criteria include its 60 V breakdown voltage, gate threshold range (1.0–2.5 V), thermal resistance (497 °C/W), SOT523 footprint compatibility, and suitability for low-current load switching in battery-powered systems.

Technical Context

This MOSFET operates as a single N-channel switch optimized for low-voltage, low-power DC load control. Its gate threshold voltage (1.0–2.5 V) supports direct drive from 1.8 V and 3.3 V logic, while R_DS(ON) remains stable across −55°C to +150°C junction temperature.

Dynamic performance is characterized by 361 pC total gate charge at 4.5 V and 821 pC at 10 V, with turn-on delay of 2.8 ns and rise time of 3.0 ns under standard test conditions (V_DD = 30 V, R_GEN = 25 Ω), confirming suitability for medium-frequency switching up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage before avalanche conduction begins; sets upper limit for supply rail compatibility.
R_DS(ON) @ 10 V_GS	5.0 Ω max - On-resistance at full gate drive; determines I²R conduction loss in 210 mA steady-state loads.
R_DS(ON) @ 5 V_GS	7.5 Ω max - On-resistance at logic-level gate drive; enables use with 5 V microcontrollers without level shifting.
C_iss	22 pF - Input capacitance; impacts gate drive strength requirement and switching transition time.
P_D (FR-4 PCB)	260 mW - Max continuous power dissipation on standard board; defines thermal derating envelope at ambient temperatures.
V_GS(TH)	1.0–2.5 V - Gate threshold range; ensures reliable turn-on with 1.8 V and 3.3 V I/O while minimizing shoot-through risk.
Q_g @ 10 V	821 pC - Total gate charge; determines energy required per switching cycle and driver output current capability needed.

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), rated for moisture sensitivity level 1 (J-STD-020), with matte tin–annealed terminals solderable per MIL-STD-202.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side or low-side switch node)	Connected to load or supply rail; handles full switched current and must be routed with adequate copper area for thermal relief.
Source (S)	Reference node for gate control and current return path	Bonded to internal substrate; forms body diode anode; requires low-impedance connection to ground or common return.
Gate (G)	Control electrode for channel formation	High-impedance input requiring ESD protection; sensitive to ringing-layout must minimize trace inductance and avoid coupling.

Key Features

Feature	Design Value
Low R_DS(ON) at 5 V_GS	7.5 Ω max enables efficient switching from 5 V logic without external level shifters or gate drivers.
Low input capacitance	22 pF C_iss reduces gate drive power and speeds up switching transitions in battery-sensitive applications.
Fast switching speed	2.8 ns turn-on delay and 3.0 ns rise time support clean edge control in digital load switching up to ~500 kHz.
Thermal stability	R_DS(ON) increases only ~1.8× from −55°C to +150°C at V_GS = 10 V, ensuring predictable conduction loss over wide ambient ranges.
Green packaging	Halogen- and antimony-free, lead-free, RoHS 3 compliant (≤900 ppm Br/Cl, ≤1000 ppm Sb), suitable for consumer and industrial eco-designs.

Applications

Smart Wearable Power Switching

USB-C Port Power Control

Use Scenario: Enabling/disabling power to BLE radio modules, sensors, or display backlights in compact wearables with tight thermal and board space constraints.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V or 5 V rails; driven directly by MCU GPIO with no external components.

Use Value: 7.5 Ω R_DS(ON) at 5 V_GS limits dropout to <380 mV at 50 mA, preserving battery runtime and simplifying layout with SOT523 footprint.

Use Scenario: Controlling V_CONN or auxiliary power paths in USB-C receptacles where space and leakage current are critical.

IC Role / Device Role / Timing Role: High-side or low-side switch managing 5 V auxiliary power delivery during cable insertion detection and configuration.

Use Value: 1.0 µA max I_DSS at 60 V ensures minimal standby leakage, while 60 V rating accommodates transient surges on USB-C lines.

IoT Sensor Node Load Management

Portable Medical Device Peripherals

Use Scenario: Sequencing power to analog front-end ICs, ADCs, or RF transceivers in battery-operated environmental sensors.

IC Role / Device Role / Timing Role: Precision-controlled power gate activated by wake-up interrupt signals; supports rapid on/off cycling.

Use Value: 2.8 ns t_D(ON) and 3.0 ns t_R enable sub-microsecond power activation, reducing system latency and idle power waste.

Use Scenario: Isolating non-critical peripherals (e.g., LED indicators, buzzer drivers) in FDA-regulated handheld diagnostics tools.

IC Role / Device Role / Timing Role: Safety-isolated load switch preventing fault propagation between subsystems during fault events.

Use Value: 150°C max junction temperature and −55°C min operating temperature ensure reliability across clinical environments and storage conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN67D8LW-7	Same die, but in SOT323 package (2.1 × 1.25 × 0.95 mm); higher R_θJA (550 °C/W) and lower P_D (200 mW).	Less thermally efficient; unsuitable for sustained >150 mA loads in same PCB area.	Select when legacy SOT323 footprint reuse is required and thermal margin exists.
AO3400	Higher R_DS(ON) (4.3 Ω @ 10 V), larger SOT23 package (3.0 × 1.4 × 1.1 mm), and higher C_iss (42 pF).	Slower switching and larger board footprint; better suited for cost-driven, non-space-constrained designs.	Choose for higher current (up to 5.7 A) capability where size is secondary to drive simplicity and cost.

Compared with DMN67D8LT-7, DMN67D8LW-7 trades thermal performance for footprint compatibility, while AO3400 offers higher current handling at the expense of size and switching efficiency-making DMN67D8LT-7 optimal for miniaturized, thermally sensitive 200 mA-class switching.

Availability

DMN67D8LT-7 is available at Aetrix Electronics and suitable for smart wearable power switching, USB-C port power control, and IoT sensor node load management requiring stable component supply and long-term production continuity.

Supply support for DMN67D8LT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN67D8LT-7 belongs to Diodes' low-voltage, low-R_DS(ON) MOSFET product line, engineered specifically for space-constrained, battery-powered applications demanding high efficiency, logic-level drive, and robust thermal behavior.

FAQ

Is DMN67D8LT-7 suitable for 1.8 V logic-level gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed R_DS(ON) of 7.5 Ω at 5 V_GS, it turns on fully with 1.8 V drive in many cases-though R_DS(ON) rises significantly below 3 V. For guaranteed performance, use ≥3.3 V drive or verify conduction loss at target current in your specific layout.

What is the maximum continuous drain current at +70°C ambient?

The datasheet specifies 170 mA continuous drain current at T_A = +70°C with device mounted on a 1″ × 1″ FR-4 PCB with 2 oz. copper. This reflects thermal derating due to reduced heat dissipation at elevated ambient; actual current depends on PCB copper area and airflow.

Does DMN67D8LT-7 include an integrated body diode?

Yes. As a standard silicon N-channel MOSFET, it features an inherent parasitic body diode between source and drain (anode at source, cathode at drain). The diode has typical forward voltage of 0.78 V at 115 mA and is rated for 210 mA continuous forward current, usable for reverse polarity protection or flyback clamping in low-energy inductive loads.

Can DMN67D8LT-7 be used in automotive applications?

No. DMN67D8LT-7 is not AEC-Q101 qualified and is not manufactured in an IATF 16949-certified facility per Diodes' documentation. For automotive-grade equivalents, contact Diodes Incorporated directly for PPAP-capable, AEC-Q101-qualified variants such as the DMP2035U or DMN6070L.

DMN67D8LT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 821 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 22 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 260mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN67D8LT-7 FAQ

1.How can I place an order for DMN67D8LT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN67D8LT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN67D8LT-7 reliable?

The price and inventory of DMN67D8LT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN67D8LT-7 is usually 5 days.

3.What payment methods are accepted for DMN67D8LT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN67D8LT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN67D8LT-7?

DMN67D8LT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN67D8LT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN67D8LT-7?

For technical support, including DMN67D8LT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN67D8LT-7 requirements.

6.How does Aetrix verify that DMN67D8LT-7 is sourced from the original manufacturer or authorized distributors?

All DMN67D8LT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN67D8LT-7 meets industry standards.

7.What is the process for return or replacement of DMN67D8LT-7?

All DMN67D8LT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN67D8LT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN67D8LT-7 part is unused and in its original packaging.

Return procedure for DMN67D8LT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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