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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN68M7SCT

Name: DMN68M7SCT
Brand: Diodes Incorporated
SKU: DMN68M7SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN68M7SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMN68M7SCT.pdf

Description:: MOSFET BVDSS: 61V~100V TO220-3 T

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN68M7SCT from Diodes Incorporated is an N-channel enhancement-mode MOSFET in TO220AB package, rated for 68V V_DSS, 8.0 mΩ R_DS(ON) @ V_GS = 10 V, and 100 A continuous drain current at T_C = +25°C. It delivers low conduction loss and robust UIS capability, deployed in high-current DC-DC converters and motor control stages.

For engineers reviewing the DMN68M7SCT datasheet, DMN68M7SCT pinout, DMN68M7SCT application, or DMN68M7SCT equivalent, key selection criteria include its 1.0 °C/W thermal resistance, 72.9 nC total gate charge at 10 V, and AEC-Q101 readiness for automotive power stages requiring stable R_DS(ON) up to +150°C junction temperature.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and fast switching. Its 4260 pF input capacitance (C_iss) and 198 pF reverse transfer capacitance (C_rss) support efficient hard-switching in synchronous buck topologies with 30 V bus voltage.

The device integrates a body diode with 31.4 ns reverse recovery time and 30.1 nC Q_RR, enabling reliable operation in freewheeling paths of motor drives and backlight inverters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	68 V - Maximum blocking voltage before avalanche onset; supports 48 V industrial bus systems with 20% margin.
R_DS(ON)	6.2–8.0 mΩ @ V_GS = 10 V - Enables ≤0.8 W conduction loss at 100 A, critical for thermally constrained power stages.
I_D (continuous)	100 A @ T_C = +25°C - Requires infinite heatsink mounting; derates to 80 A at T_C = +70°C per thermal design rules.
E_AS	183 mJ - Withstands single-pulse inductive energy up to 0.3 mH load without failure; validated 100% in production.
C_iss	4260 pF - Determines gate drive power requirement; ~73 nC Q_G confirms moderate drive strength needed for <100 kHz switching.
R_θJC	1.0 °C/W - Enables direct thermal path to heatsink; allows 125 W dissipation before reaching 150°C junction limit.

Pinout & Package

TO220AB package with isolated tab (drain-connected), matte tin-plated copper leadframe, UL 94V-0 molded plastic body, and 1.85 g mass. Pin configuration verified per Diodes DS40859 Rev. 7-2 Figure "Top View Pin Out Configuration".

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits.
Source	Return path for load current / reference node for gate drive	Low-inductance connection required to minimize V_GS noise during switching transients.
Gate	Control terminal for channel modulation	High-impedance input; requires <1.75 Ω series resistance to damp ringing from 198 pF C_rss coupling.

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse ruggedness to 35 A avalanche current and 183 mJ energy without screening failure.
Low C_iss/C_rss ratio	4260 pF / 198 pF = 21.5 - Reduces Miller effect, enabling stable 10 V gate drive without active clamping.
Lead-free & halogen-free	Meets RoHS 3 (2015/863/EU) and Diodes "Green" standard (<900 ppm Br+Cl, <1000 ppm Sb).
Body diode Q_RR	30.1 nC - Low stored charge enables efficient zero-voltage switching in resonant converters and reduces diode losses in BLDC commutation.

Applications

Motor Control

DC-DC Converters

Use Scenario: High-side switch in 24–48 V brushed DC motor drivers for industrial actuators.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional PWM current up to 100 A peak.

Use Value: 6.2 mΩ R_DS(ON) minimizes I²R heating during 100% duty cycle stall conditions, extending thermal margin.

Use Scenario: Synchronous rectifier in 48 V → 12 V step-down converter for telecom power shelves.

IC Role / Device Role / Timing Role: Low-side switch in continuous conduction mode (CCM) buck regulator operating at 200 kHz.

Use Value: 31.4 ns t_RR and 30.1 nC Q_RR suppress voltage overshoot during body-diode commutation, reducing EMI and snubber losses.

Backlighting

Power Management

Use Scenario: LED string current switch in automotive LCD display backlight modules.

IC Role / Device Role / Timing Role: Constant-current switch modulating 5–10 A LED loads via PWM dimming at 1–20 kHz.

Use Value: 1.3–3.0 V V_GS(TH) ensures clean turn-on with 3.3 V logic-level gate drivers, eliminating level-shifter need.

Use Scenario: Hot-swap FET in 68 V battery-powered industrial equipment with inrush limiting.

IC Role / Device Role / Timing Role: Series pass element controlling power-up sequencing and fault isolation.

Use Value: 68 V BVDSS provides headroom above 54 V nominal Li-ion stack, while 1.0 °C/W R_θJC supports rapid thermal response during overcurrent events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP68M7F6	Same V_DSS (68 V), higher R_DS(ON) (9.5 mΩ), TO220FP package (isolated drain tab)	Lower thermal resistance (0.85 °C/W) but reduced surge rating (E_AS = 130 mJ)	Preferred where board space limits heatsink area but avalanche stress is low.
IRF1404ZPBF	Higher V_DSS (40 V), lower R_DS(ON) (4.7 mΩ), TO220AB package, no UIS test guarantee	Optimized for 12–24 V systems; lacks production-tested avalanche ruggedness	Selected only for cost-sensitive 24 V DC-DC where transient energy is clamped externally.

Compared with STP68M7F6 and IRF1404ZPBF, DMN68M7SCT uniquely balances 68 V rating, 8.0 mΩ on-resistance, full UIS validation, and TO220AB mechanical compatibility-making it optimal for unclamped inductive loads in 48 V industrial and automotive subsystems.

Availability

DMN68M7SCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting, and power management applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN68M7SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with ISO/TS 16949-certified manufacturing facilities and broad distribution networks.

This MOSFET belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency power conversion in industrial, automotive, and computing systems where low R_DS(ON), ruggedness, and thermal reliability are prioritized.

FAQ

Is DMN68M7SCT qualified for automotive applications?

DMN68M7SCT is not pre-qualified to AEC-Q101, but Diodes Incorporated states that automotive-grade versions with PPAP capability and IATF 16949 manufacturing are available upon request. Standard units meet RoHS 3 and halogen-free requirements, and their 150°C maximum junction temperature supports under-hood thermal environments when properly heatsinked.

What is the gate threshold voltage range, and how does it affect drive compatibility?

V_GS(TH) is specified from 1.3 V to 3.0 V at I_D = 250 µA. This wide range ensures reliable turn-on with 3.3 V microcontroller GPIOs while maintaining noise immunity against false triggering in noisy industrial settings. Gate drive must supply ≥10 V to achieve rated 6.2 mΩ R_DS(ON).

Can DMN68M7SCT be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature, per Figure 6) enables stable current sharing. Designers must match layout symmetry, gate drive impedance, and thermal coupling to avoid imbalance; typical derating is 15% per additional device beyond two.

Does the TO220AB package have an electrically isolated tab?

No-the drain is internally connected to the metal tab in the TO220AB variant. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) between tab and heatsink. The datasheet explicitly labels the tab as "Drain (Tab)" in the pin-out diagram and specifies no internal isolation.

DMN68M7SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 68 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4260 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMN68M7SCT FAQ

1.How can I place an order for DMN68M7SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN68M7SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN68M7SCT reliable?

The price and inventory of DMN68M7SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN68M7SCT is usually 5 days.

3.What payment methods are accepted for DMN68M7SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN68M7SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN68M7SCT?

DMN68M7SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN68M7SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN68M7SCT?

For technical support, including DMN68M7SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN68M7SCT requirements.

6.How does Aetrix verify that DMN68M7SCT is sourced from the original manufacturer or authorized distributors?

All DMN68M7SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN68M7SCT meets industry standards.

7.What is the process for return or replacement of DMN68M7SCT?

All DMN68M7SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMN68M7SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN68M7SCT part is unused and in its original packaging.

Return procedure for DMN68M7SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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