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Diodes Incorporated DMN90H2D2HCTI

Part No.:
DMN90H2D2HCTI
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixDMN90H2D2HCTI.pdf
Description:
MOSFET N-CH 900V 6A ITO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,656

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Product details

Overview

DMN90H2D2HCTI from Diodes Incorporated is a 900 V, 6 A N-channel enhancement-mode MOSFET in ITO-220AB package, featuring 2.2 Ω RDS(ON) at VGS = 10 V and 360 mJ avalanche energy rating. It serves as a high-voltage switching element in offline power stages, delivering low conduction loss and robust unclamped inductive switching capability for industrial DC-DC converters.

For engineers reviewing the DMN90H2D2HCTI datasheet, DMN90H2D2HCTI pinout, DMN90H2D2HCTI application, or DMN90H2D2HCTI equivalent, key selection criteria include its 900 V BVDSS rating, 2.2 Ω on-resistance at 10 V gate drive, 24 A pulsed drain current, 1487 pF input capacitance, and ITO-220AB thermal performance with 3.6 °C/W RθJC.

Technical Context

This MOSFET employs a planar silicon process optimized for high-voltage ruggedness and fast switching. Its gate threshold voltage (3–5 V) enables compatibility with standard 10 V gate drivers, while the low Crss (1 pF) and Qgd (6.1 nC) support reduced Miller-induced turn-off delay in hard-switched topologies.

The device integrates an intrinsic body diode with 607 ns reverse recovery time and 8.1 µC QRR, suitable for freewheeling in flyback and resonant converters. Thermal design leverages the ITO-220AB package's low junction-to-case resistance (3.6 °C/W) for reliable operation up to +150 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
BVDSS900 V - Withstands full mains-referenced DC bus voltages in 380–400 VAC offline systems without breakdown.
RDS(ON)2.2 Ω @ VGS = 10 V - Delivers ≤1.2 W conduction loss at 6 A continuous drain current under typical gate drive conditions.
ID (TC = 25°C)6 A - Supports continuous output power up to ~25 W in TO-220-class heatsink-limited designs.
EAS360 mJ - Sustains single-pulse inductive energy transients common in motor drive and relay snubbing applications.
Ciss1487 pF - Determines total gate charge requirement (20.3 nC), influencing driver strength and switching speed trade-offs.
tRR / QRR607 ns / 8.1 µC - Defines body diode recovery behavior critical for ZVS/ZCS soft-switching implementation and EMI control.
RθJC3.6 °C/W - Enables direct mounting to heatsinks for thermal management in space-constrained industrial enclosures.

Pinout & Package

Package: ITO-220AB (Type TH), through-hole, thermally enhanced plastic housing with copper leadframe and matte tin terminals. Weight: 1.85 g. UL 94V-0 rated molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main high-side current pathElectrically connected to metal tab - must be isolated from heatsink unless referenced to system ground; primary thermal conduction path.
SourceReference node for gate drive and current sensingLow-impedance return path; used for shunt-based current monitoring and gate driver reference in half-bridge configurations.
GateControl terminal for channel modulationHigh-impedance input requiring <6.1 nC charge for full turn-on; sensitive to ringing due to 4.7 Ω internal gate resistance.

Key Features

FeatureDesign Value
High BVDSS rating900 V withstand capability ensures margin against line surges and reflected spikes in 400 VAC-input SMPS.
Low input capacitance1487 pF Ciss reduces gate drive power and improves switching efficiency in high-frequency (>100 kHz) converters.
Robust avalanche capability360 mJ EAS allows safe operation during transient overloads without external snubbers in motor control H-bridges.
Thermally optimized packageITO-220AB delivers 3.6 °C/W RθJC - 25% lower than standard TO-220 - enabling higher power density in convection-cooled designs.
Green and RoHS-compliantHalogen- and antimony-free construction (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental compliance mandates.

Applications

Motor Control SystemsIndustrial DC-DC Converters

Use Scenario: Driving brushed DC motors in factory automation actuators with 380 VAC rectified bus.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology handling 6 A continuous load current.

Use Value: 900 V BVDSS provides 2× safety margin over 400 VDC bus; 360 mJ EAS absorbs commutation spikes without clamping diodes.

Use Scenario: Primary switch in isolated flyback converter powering PLC I/O modules from 240 VAC mains.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 10 V gate drive and self-driven synchronous rectification.

Use Value: 2.2 Ω RDS(ON) limits conduction loss to <1.2 W; 607 ns tRR enables predictable body diode conduction during dead-time.

LED Backlight Power SuppliesPower Management Functions

Use Scenario: Constant-current LED driver for large-format signage powered from universal AC input.

IC Role / Device Role / Timing Role: Primary-side switch regulating output via optocoupler feedback in quasi-resonant mode.

Use Value: Low Crss (1 pF) minimizes Miller effect during high dv/dt transitions, improving light-output stability across dimming range.

Use Scenario: High-voltage auxiliary supply for gate drivers and controllers in industrial inverters.

IC Role / Device Role / Timing Role: Regulated buck-derived supply switch delivering 15 V/0.5 A from 600 VDC intermediate bus.

Use Value: 24 A IDM supports startup surge; 1.7 Ω typ RDS(ON) maintains >85% efficiency at full load under thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 8.5 A, 1.4 Ω RDS(ON), TO-220FP package, no specified EAS ratingLacks documented avalanche energy spec; higher ID but larger RDS(ON) drift over temperaturePreferable where peak current >6 A is required and avalanche stress is minimal.
IXTP90N10P1000 V, 90 A, 0.1 Ω RDS(ON), TO-220 package, 1200 mJ EASHigher cost, oversized for 6 A use case; excessive capacitance (3200 pF) limits switching frequencySuitable only when future-proofing for >10 A loads or extreme surge immunity is mandatory.

Compared with STP9NK90ZFP and IXTP90N10P, DMN90H2D2HCTI offers optimal balance of 900 V rating, 6 A capability, 2.2 Ω on-resistance, and verified 360 mJ avalanche robustness - making it more thermally efficient and better suited for compact, convection-cooled 25–30 W industrial power supplies.

Availability

DMN90H2D2HCTI is available at Aetrix Electronics and suitable for motor controls, industrial DC-DC converters, and LED backlight power supplies requiring stable component supply despite its obsolete status.

Supply support for DMN90H2D2HCTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for industrial, computing, consumer, and communications markets.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered for rugged offline power conversion in non-automotive industrial equipment where reliability under surge and thermal stress is critical.

FAQ

Is DMN90H2D2HCTI still in active production?

No - Diodes Incorporated has officially discontinued DMN90H2D2HCTI (marked "OBSOLETE – PART DISCONTINUED" in DS38826 Rev. 6-4). Aetrix Electronics maintains limited legacy stock with full traceability and offers engineering support for last-time buy and obsolescence mitigation planning.

Can DMN90H2D2HCTI be used in AEC-Q101 qualified designs?

No - this part is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade versions require separate qualification (AEC-Q100/101/104/200), PPAP capability, and IATF 16949 manufacturing - none of which apply to DMN90H2D2HCTI.

What is the maximum recommended gate resistor value for reliable switching?

Based on Qg = 20.3 nC and tD(OFF) = 51 ns with Rg = 25 Ω in test conditions, a gate resistor between 10 Ω and 33 Ω is recommended to limit peak gate current while maintaining <100 ns turn-off delay in 65–100 kHz applications.

Does the ITO-220AB package require insulating hardware when mounted to a heatsink?

Yes - the drain is electrically connected to the metal tab. An insulating washer (e.g., mica or silicone pad) and shoulder washer must be used unless the heatsink is intentionally tied to the drain potential, as confirmed by system-level isolation analysis.

DMN90H2D2HCTI Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20.3 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1487 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO-220AB

DMN90H2D2HCTI FAQ

1.How can I place an order for DMN90H2D2HCTI through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN90H2D2HCTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN90H2D2HCTI reliable?

The price and inventory of DMN90H2D2HCTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN90H2D2HCTI is usually 5 days.

3.What payment methods are accepted for DMN90H2D2HCTI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN90H2D2HCTI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN90H2D2HCTI?

DMN90H2D2HCTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN90H2D2HCTI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN90H2D2HCTI?

For technical support, including DMN90H2D2HCTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN90H2D2HCTI requirements.

6.How does Aetrix verify that DMN90H2D2HCTI is sourced from the original manufacturer or authorized distributors?

All DMN90H2D2HCTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN90H2D2HCTI meets industry standards.

7.What is the process for return or replacement of DMN90H2D2HCTI?

All DMN90H2D2HCTI units undergo pre-shipment inspection (PSI). If there is an issue with DMN90H2D2HCTI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN90H2D2HCTI part is unused and in its original packaging.

Return procedure for DMN90H2D2HCTI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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