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Diodes Incorporated DMN90H8D5HCT
- Part No.:
- DMN90H8D5HCT
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
DMN90H8D5HCT.pdf
- Description:
- MOSFET N-CH 900V 2.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,504
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Product details
Overview
DMN90H8D5HCT from Diodes Incorporated is a 900V N-channel enhancement-mode power MOSFET in TO220AB (Type TH) package, rated for 2.5A continuous drain current at TC = +25°C, with RDS(ON) = 5.5Ω (typ) @ VGS = 10V and low input capacitance (Ciss = 470pF), used in high-voltage DC-DC converters and motor control stages where fast switching and avalanche ruggedness (EAS = 97mJ) are critical.
For engineers reviewing the DMN90H8D5HCT datasheet, DMN90H8D5HCT pinout, DMN90H8D5HCT application, or DMN90H8D5HCT equivalent, this page delivers verified electrical specs, thermal behavior under pulsed SOA, gate charge profile (Qg = 7.9nC), body diode recovery (tRR = 375ns), and real-world junction-to-case thermal resistance (RθJC = 1°C/W) - all essential for high-reliability 900V power stage design.
Technical Context
This MOSFET employs planar silicon process architecture optimized for high-voltage blocking and low conduction loss trade-off. Its 900V BVDSS rating enables direct use in 400–800V bus applications without series stacking, while its 1.2Ω gate resistance and 2.9nC Qgd support controlled turn-off dv/dt in hard-switched topologies.
The device integrates an intrinsic body diode with VSD = 0.84V (typ) @ IS = 2A and tRR = 375ns under dI/dt = 100A/μs, enabling operation in freewheeling and synchronous rectification roles where reverse recovery robustness matters - confirmed by SOA curves validated up to PW = 1µs at TJ(max) = 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 900V - supports direct connection to 800V DC bus without derating or series configuration |
| RDS(ON) | 5.5Ω (typ) @ VGS = 10V - enables <1.4W conduction loss at 1.5A ID, suitable for thermally constrained designs |
| ID (TC = +25°C) | 2.5A - defines maximum steady-state current with heatsink at ambient temperature |
| Ciss / Coss / Crss | 470pF / 45pF / 0.6pF - low Crss minimizes Miller-induced shoot-through risk in half-bridge layouts |
| Qg / Qgs / Qgd | 7.9nC / 2.5nC / 2.9nC - enables efficient gate drive with <1W average power at 100kHz switching |
| EAS | 97mJ - guarantees single-pulse avalanche capability under inductive load interruption without failure |
| RθJC | 1°C/W - allows precise junction temperature estimation using case temperature measurement in production |
Pinout & Package
TO220AB (Type TH) package with standard three-terminal layout: Drain connected to tab (electrically active), Source and Gate on leads. Mounting requires insulated hardware due to tab-drain connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically tied to metal tab - must be isolated from heatsink unless system ground reference permits |
| Source | Reference node for gate drive and current sensing | Low-inductance return path; critical for accurate RDS(ON)-based current monitoring |
| Gate | Control terminal for channel modulation | Requires <±30V absolute rating; 1.2Ω internal RG limits ringing but mandates careful PCB routing |
Key Features
| Feature | Design Value |
|---|---|
| High BVDSS with low RDS(ON) ratio | 900V breakdown achieved with only 5.5Ω on-resistance - reduces conduction loss in HV SMPS without sacrificing voltage margin |
| Low Crss (0.6pF) | Minimizes Miller plateau duration and gate drive energy, improving efficiency in 50–200kHz hard-switched converters |
| Avalanche-rated (EAS = 97mJ) | Enables reliable operation in inductive switching circuits without external snubbers or clamps |
| RoHS-compliant & Halogen-free | Meets IEC 61249-2-21:2017; <900ppm Br+Cl total - supports environmental compliance in industrial and medical end equipment |
| Fast body diode recovery (tRR = 375ns) | Reduces switching losses in freewheeling paths and improves reliability in discontinuous conduction mode (DCM) operation |
Applications
| Industrial Motor Drives | LED Backlight Power Supplies |
|---|---|
Use Scenario: High-voltage BLDC motor phase-leg switching in HVAC blowers and pump controllers operating from 400V DC bus. IC Role / Device Role / Timing Role: Main switching element in inverter half-bridge, handling 2.5A RMS current with 900V peak blocking. Use Value: Low RDS(ON) and EAS rating eliminate need for external avalanche protection, reducing BOM count and board area. |
Use Scenario: Primary-side switch in flyback LED drivers powering large-area signage with 700–900V output requirements. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding. Use Value: 900V BVDSS allows direct use without voltage divider networks, simplifying feedback loop design and improving transient response. |
| High-Voltage DC-DC Converters | Power Management for Industrial PLCs |
Use Scenario: Isolated 48V-to-380V boost converter supplying auxiliary rails in factory automation systems. IC Role / Device Role / Timing Role: Main power switch in interleaved boost stage, operating at 100kHz with 50% duty cycle. Use Value: Low Ciss and Qg enable efficient gate driving with standard 1A peak drivers, reducing driver IC cost and footprint. |
Use Scenario: Input protection and hot-swap control in programmable logic controller (PLC) power modules accepting 24–300V DC input. IC Role / Device Role / Timing Role: High-side power switch managing inrush current and overvoltage isolation during field wiring. Use Value: Fast tRR and low leakage (<1µA IDSS) ensure stable standby operation and prevent false triggering in safety-critical control logic. |
Availability
DMN90H8D5HCT is available at Aetrix Electronics and suitable for industrial motor drives, LED backlight power supplies, high-voltage DC-DC converters, and PLC power management requiring stable component supply across extended product lifecycles.
Supply support for DMN90H8D5HCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for ruggedized 600–1000V switching applications where avalanche capability, low gate charge, and thermal stability are mandatory design requirements.
FAQ
Is DMN90H8D5HCT suitable for automotive applications?
No - DMN90H8D5HCT is not AEC-Q101 qualified and lacks PPAP documentation or IATF 16949 manufacturing certification. Diodes explicitly states that automotive-grade versions require separate qualification and direct engagement with their sales team. This part is intended for industrial and commercial power systems only.
What is the maximum safe operating temperature for continuous operation?
The device supports continuous operation up to TJ = +150°C, as confirmed by its SOA curve (Figure 12) and thermal resistance data (RθJC = 1°C/W). At TC = +100°C, the continuous drain current is derated to 1.5A - exceeding this requires active thermal monitoring or reduced duty cycling.
Can DMN90H8D5HCT replace older 800V MOSFETs like STP8NK80ZFP?
Yes - with design validation. DMN90H8D5HCT offers higher BVDSS (900V vs. 800V), lower RDS(ON) (5.5Ω vs. 7.5Ω), and superior EAS (97mJ vs. 60mJ), but gate threshold voltage is higher (3.0–5.0V vs. 2.0–4.0V), requiring gate drive redesign to ensure full enhancement at lower voltages.
Does the TO220AB tab connect to Drain or Source?
The metal tab is internally connected to the Drain terminal - confirmed by Diodes' mechanical drawings and pin-out diagrams. This requires electrical isolation from the heatsink unless the system's high-side ground reference permits direct mounting, otherwise creepage/clearance risks arise.
DMN90H8D5HCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.9 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 470 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
DMN90H8D5HCT FAQ
1.How can I place an order for DMN90H8D5HCT through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN90H8D5HCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN90H8D5HCT reliable?
The price and inventory of DMN90H8D5HCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN90H8D5HCT is usually 5 days.
3.What payment methods are accepted for DMN90H8D5HCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN90H8D5HCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN90H8D5HCT?
DMN90H8D5HCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN90H8D5HCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN90H8D5HCT?
For technical support, including DMN90H8D5HCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN90H8D5HCT requirements.
6.How does Aetrix verify that DMN90H8D5HCT is sourced from the original manufacturer or authorized distributors?
All DMN90H8D5HCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN90H8D5HCT meets industry standards.
7.What is the process for return or replacement of DMN90H8D5HCT?
All DMN90H8D5HCT units undergo pre-shipment inspection (PSI). If there is an issue with DMN90H8D5HCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN90H8D5HCT part is unused and in its original packaging.
Return procedure for DMN90H8D5HCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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