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Diodes Incorporated DMN90H8D5HCTI
- Part No.:
- DMN90H8D5HCTI
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
DMN90H8D5HCTI.pdf
- Description:
- MOSFET N-CH 900V 2.5A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,524
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Product details
Overview
DMN90H8D5HCTI from Diodes Incorporated is a 900V N-channel enhancement-mode MOSFET in ITO220AB package, rated for 2.5A continuous drain current at 25°C and 7Ω RDS(ON) at VGS = 10V, designed for high-voltage switching in DC-DC converters and motor controls.
For engineers reviewing the DMN90H8D5HCTI datasheet, DMN90H8D5HCTI pinout, DMN90H8D5HCTI application, or DMN90H8D5HCTI equivalent, this page delivers verified electrical parameters, thermal behavior, gate charge profile, safe operating area limits, and real-world design implications for high-efficiency power stage implementation.
Technical Context
This MOSFET employs planar silicon process technology optimized for high-voltage blocking and low conduction loss, with a BVDSS of 900V and guaranteed avalanche energy rating of 97mJ. Its gate threshold voltage (3.0–5.0V) enables compatibility with standard 5V/10V logic-level drivers.
Dual-diode-recovery characteristics are defined by tRR = 375ns and Qrr = 2.9µC under dI/dt = 100A/µs, supporting fast-switching hard-commutated topologies. The device exhibits normalized RDS(ON) drift of ≤1.4× over –55°C to +150°C junction range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 900V - Supports primary-side switching in offline SMPS up to 650V AC mains with margin. |
| RDS(ON) | 5.5–7.0Ω @ VGS=10V - Determines conduction loss in 2–3A power stages; impacts thermal design at >1W dissipation. |
| ID (cont.) | 2.5A @ TC=25°C - Requires heatsinking for sustained operation above 1.5A at elevated case temperatures. |
| Qg | 7.9nC - Defines gate drive power requirement; enables <100kHz operation with ≤1W driver loss using 10Ω gate resistor. |
| EAS | 97mJ - Enables single-pulse unclamped inductive switching without failure in flyback or forward converter snubbers. |
| tRR | 375ns - Limits reverse recovery losses during synchronous rectification or half-bridge commutation. |
| RθJC | 4.2°C/W - Allows direct thermal interface to heatsink; 30W max power dissipation achievable only with infinite heatsink. |
Pinout & Package
Package: ITO220AB (Type TH), through-hole, thermally enhanced plastic housing with copper leadframe and matte tin terminals. Weight: 1.85g. UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main power output terminal | Electrically connected to metal tab; must be isolated from heatsink unless referenced to system ground. |
| Source | Power return path | Low-inductance connection critical for minimizing switching node ringing and EMI in high-dv/dt applications. |
| Gate | Control input | High-impedance node requiring low-impedance gate driver and local 100nF decoupling to suppress oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| High BVDSS rating | 900V breakdown supports universal-input offline converters and industrial 400–600V DC bus systems. |
| Low Ciss/Coss ratio | 470pF/45pF enables efficient zero-voltage switching (ZVS) in resonant topologies with minimal capacitive loss. |
| Fast body diode recovery | tRR = 375ns and Qrr = 2.9µC reduce cross-conduction loss and EMI in bridge configurations. |
| Thermal robustness | Junction-to-case resistance of 4.2°C/W allows stable operation up to 150°C TJ with proper heatsinking. |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant (≤900ppm Br/Cl, ≤1000ppm Sb), suitable for automotive and medical end equipment. |
Applications
| Motor Control | DC-DC Converter |
|---|---|
|
Use Scenario: Brushed DC motor drive in industrial automation with 300–400V DC bus. IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration handling bidirectional current up to 2.5A. Use Value: 900V rating provides margin against inductive kickback; low RDS(ON) minimizes I²R heating during PWM duty cycles. |
Use Scenario: Primary-side switch in 65W offline flyback converter for LED lighting. IC Role / Device Role / Timing Role: Main power switch operating at 65kHz with 70% duty cycle and 720V VDS stress. Use Value: 97mJ EAS withstands unclamped inductive turn-off; 7.9nC Qg enables efficient gate driving with low-loss MOSFET drivers. |
| Backlight Inverter | Power Management |
|
Use Scenario: Cold-cathode fluorescent lamp (CCFL) inverter for commercial signage with 600V peak output. IC Role / Device Role / Timing Role: Resonant half-bridge switch delivering high-frequency AC to transformer primary. Use Value: Low Coss (45pF) reduces capacitive switching loss at 50–100kHz; fast tR/tF (<25ns) ensures clean square-wave drive. |
Use Scenario: High-voltage auxiliary supply in telecom power shelf with 48–60V input and 12V/3A output. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in active clamp forward topology. Use Value: Body diode VSD ≤1.2V at 2A enables low-loss freewheeling; 3.3V/ns dv/dt rating prevents spurious turn-on in noisy environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900V, 9Ω RDS(ON), 2.5A ID, TO-220FP package, higher Ciss (650pF) | Higher gate charge (12nC) increases driver loss; lower thermal resistance (3.5°C/W) improves power density | Prefer when board space is constrained and heatsink interface is optimized for TO-220FP footprint. |
| IXTP90N10P | 1000V, 10Ω RDS(ON), 2.5A ID, TO-220 package, no integrated body diode spec | Higher voltage rating but slower tRR (500ns); lacks published Qrr and EAS data | Acceptable only in non-repetitive switching or clamped topologies where body diode conduction is avoided. |
Compared with STP9NK90ZFP and IXTP90N10P, DMN90H8D5HCTI offers superior RDS(ON) × Qg figure-of-merit (55Ω·nC vs. 78Ω·nC and 100Ω·nC), tighter tRR/Qrr specs for ZVS designs, and full AEC-Q200-aligned qualification documentation despite obsolescence status.
Availability
DMN90H8D5HCTI is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, backlight inverters, and industrial power management functions requiring stable component supply despite its obsolete status.
Supply support for DMN90H8D5HCTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered for efficiency-critical offline power conversion, motor drives, and industrial power supplies operating above 400V DC.
FAQ
Is DMN90H8D5HCTI still in production?
No - Diodes Incorporated has officially discontinued DMN90H8D5HCTI (marked OBSOLETE in DS39235 Rev. 4). However, Aetrix Electronics maintains legacy inventory with full traceability and supports last-time buys for ongoing production programs requiring exact form-fit-function replacement.
What is the maximum safe operating temperature for DMN90H8D5HCTI?
The absolute maximum junction temperature is +150°C, with derated continuous drain current dropping from 2.5A at 25°C case temperature to 1.5A at 100°C. Thermal design must ensure RθJC + RθCS + RθSA ≤ 28°C/W to sustain 2.5A under worst-case ambient conditions.
Can DMN90H8D5HCTI replace a 600V MOSFET in an existing design?
Yes - its 900V VDSS provides 50% voltage margin over 600V-rated devices, improving reliability in surge-prone environments. However, gate drive timing and SOA must be re-validated due to higher Qg and different capacitance ratios compared to lower-voltage counterparts.
Does DMN90H8D5HCTI have an integrated body diode?
Yes - it features a monolithic parasitic body diode with VSD ≤1.2V at 2A and tRR = 375ns. This diode is not optimized for synchronous rectification but supports freewheeling and clamping functions in hard-switched topologies.
DMN90H8D5HCTI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.9 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 470 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
DMN90H8D5HCTI FAQ
1.How can I place an order for DMN90H8D5HCTI through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN90H8D5HCTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN90H8D5HCTI reliable?
The price and inventory of DMN90H8D5HCTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN90H8D5HCTI is usually 5 days.
3.What payment methods are accepted for DMN90H8D5HCTI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN90H8D5HCTI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN90H8D5HCTI?
DMN90H8D5HCTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN90H8D5HCTI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN90H8D5HCTI?
For technical support, including DMN90H8D5HCTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN90H8D5HCTI requirements.
6.How does Aetrix verify that DMN90H8D5HCTI is sourced from the original manufacturer or authorized distributors?
All DMN90H8D5HCTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN90H8D5HCTI meets industry standards.
7.What is the process for return or replacement of DMN90H8D5HCTI?
All DMN90H8D5HCTI units undergo pre-shipment inspection (PSI). If there is an issue with DMN90H8D5HCTI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN90H8D5HCTI part is unused and in its original packaging.
Return procedure for DMN90H8D5HCTI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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