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Diodes Incorporated DMN95H2D2HCTI
- Part No.:
- DMN95H2D2HCTI
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
DMN95H2D2HCTI.pdf
- Description:
- MOSFET N-CH 950V 6A ITO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,054
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Product details
Overview
DMN95H2D2HCTI from Diodes Incorporated is a 950V N-channel enhancement-mode MOSFET in ITO220AB package, rated for 6A continuous drain current at TC = +25°C and 2.2Ω RDS(ON) at VGS = 10V, designed for high-voltage switching in DC-DC converters and motor control circuits.
For engineers reviewing the DMN95H2D2HCTI datasheet, DMN95H2D2HCTI pinout, DMN95H2D2HCTI application, or DMN95H2D2HCTI equivalent, key selection criteria include BVDSS rating, RDS(ON) vs. temperature stability, gate charge (Qg = 20.3 nC), avalanche energy (EAS = 360 mJ), and thermal resistance (RθJC = 3.6°C/W).
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage blocking and low conduction loss. Its 950V BVDSS and 2.2Ω RDS(ON) enable operation in primary-side switching of offline SMPS and industrial motor drives where voltage transients exceed 800V.
Dynamic characteristics include Ciss = 1487 pF, Crss = 1 pF, and fast switching times (tD(ON) = 39 ns, tF = 31 ns) with Qgd/Qgs ratio of ~0.95 - indicating moderate Miller effect and controllable turn-off behavior under hard-switching conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 950 V - Withstands 950V drain-source blocking voltage before avalanche, enabling use in 800V-class AC-input power supplies. |
| RDS(ON) | 2.2 Ω @ VGS = 10V, ID = 3A - Low on-resistance minimizes conduction loss at 6A continuous current in thermally managed designs. |
| ID (TC = +25°C) | 6 A - Continuous drain current rating at case temperature 25°C, derating to 4A at 100°C per thermal limits. |
| EAS | 360 mJ - Avalanche energy rating supports unclamped inductive switching in relay drivers and flyback snubbers without failure. |
| Qg | 20.3 nC - Total gate charge determines driver strength requirement; compatible with standard 1A peak gate drivers at 100 kHz switching. |
| RθJC | 3.6 °C/W - Junction-to-case thermal resistance enables 40W power dissipation with minimal heatsink when mounted on infinite heatsink. |
| tRR / QRR | 607 ns / 8.1 µC - Body diode reverse recovery performance suitable for synchronous rectification in medium-frequency LLC resonant converters. |
Pinout & Package
Package: ITO220AB (Type TH), through-hole, single-die N-channel MOSFET with isolated tab (drain-connected). Molded plastic housing, matte tin-plated copper leadframe, UL 94V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-voltage power output node | Electrically connected to metal tab; requires insulated mounting hardware when referenced to non-ground potentials. |
| Source | Power return path and reference for gate drive | Low-inductance connection critical for stable switching; ties directly to PCB ground plane or source rail. |
| Gate | Control input for channel conduction | High-impedance terminal requiring <±30V rating; sensitive to ESD; must be driven with controlled slew rate to limit dV/dt-induced turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| High BVDSS rating | 950V breakdown supports direct connection to 690VAC three-phase rectified bus without series stacking. |
| Low input capacitance | Ciss = 1487 pF reduces gate drive power and improves high-frequency efficiency in >100 kHz topologies. |
| Low leakage | IDSS ≤ 1 µA at 950V ensures minimal standby loss in always-on auxiliary supplies and hold-up circuits. |
| Robust avalanche capability | EAS = 360 mJ allows reliable operation during inductive load switching without external clamping in cost-sensitive designs. |
| Green packaging | Halogen- and antimony-free, RoHS-compliant molding compound meets IEC 61249-2-21 and automotive environmental requirements. |
Applications
| Motor Controls | DC-DC Converters |
|---|---|
|
Use Scenario: High-voltage BLDC motor phase switching in industrial pumps and HVAC compressors operating from 400–800V DC bus. IC Role / Device Role / Timing Role: Primary high-side switching element in three-phase inverter leg, handling 6A RMS current with 950V transient margin. Use Value: Enables compact inverter design by eliminating external snubbers due to 360 mJ avalanche rating and low Crss (1 pF) reducing voltage spikes. |
Use Scenario: Primary switch in 1 kW offline flyback or forward converter for telecom and server PSUs. IC Role / Device Role / Timing Role: Main power switch turning on/off 950V DC link at 65–100 kHz with controlled dV/dt to minimize EMI. Use Value: 2.2Ω RDS(ON) and 20.3 nC Qg allow >92% efficiency at full load while maintaining thermal margin on standard heatsinks. |
| Backlighting | Power Management Functions |
|
Use Scenario: LED string current regulation in high-brightness outdoor signage powered from 300–600V DC intermediate bus. IC Role / Device Role / Timing Role: Constant-current switch controlling PWM dimming frequency up to 20 kHz with minimal dead-time distortion. Use Value: Fast tF = 31 ns and low Qgd ensure precise current pulse fidelity across wide dimming range without color shift. |
Use Scenario: Hot-swap FET and OR-ing controller in redundant 48V/54V DC distribution systems for data centers. IC Role / Device Role / Timing Role: Bidirectional blocking switch protecting upstream supply during fault events with <1 µA IDSS leakage. Use Value: 950V BVDSS provides 2× safety margin over 54V bus, enabling robust fault isolation without additional voltage dividers or sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900V BVDSS, 2.2Ω RDS(ON), TO-220FP package, higher Qg (32 nC), lower EAS (250 mJ) | Limited to 75 kHz max switching due to higher gate charge; less robust in unclamped inductive turn-off | Preferable only if footprint compatibility with existing TO-220FP layout is required and avalanche stress is minimal. |
| IXTP90N10P | 1000V BVDSS, 1.0Ω RDS(ON), TO-220 package, higher ID (90A pulsed), larger die size | Higher conduction efficiency but slower switching (tF = 65 ns) and larger Crss (4.5 pF) increases EMI risk | Preferred for low-frequency, high-current applications like welder controls where thermal headroom outweighs switching loss. |
Compared with STP9NK90ZFP and IXTP90N10P, DMN95H2D2HCTI offers optimal balance of 950V rating, 20.3 nC gate charge, and 360 mJ avalanche energy - making it uniquely suited for 65–150 kHz high-reliability industrial SMPS where both voltage margin and switching efficiency matter.
Availability
DMN95H2D2HCTI is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, backlighting, and power management functions requiring stable component supply despite its obsolete status - supported via legacy inventory and cross-reference assistance.
Supply support for DMN95H2D2HCTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for industrial and commercial power conversion systems demanding reliability at 800–1000V operating ranges.
FAQ
Is DMN95H2D2HCTI still in active production?
No - DMN95H2D2HCTI is officially marked obsolete by Diodes Incorporated as of September 2022. Aetrix Electronics maintains limited legacy stock and supports replacement analysis with verified alternatives including STP9NK90ZFP and IXTP90N10P based on electrical and thermal equivalence.
What is the correct gate drive voltage range for reliable operation?
The gate threshold voltage VGS(TH) is specified from 3V to 5V, but full enhancement requires VGS ≥ 10V. Maximum rated gate-source voltage is ±30V; operation above 15V yields diminishing RDS(ON) improvement while increasing gate oxide stress risk.
Can this MOSFET be used in avalanche mode repeatedly?
Yes - the datasheet specifies EAS = 360 mJ (L = 60 mH) as a guaranteed design parameter. Repeated unclamped inductive switching is permissible within SOA limits shown in Figure 12, provided peak junction temperature remains below 150°C and pulse duration is ≤10 ms.
How does the ITO220AB package differ from standard TO-220AB?
ITO220AB features an isolated metal tab (electrically separate from leads), unlike TO-220AB's internally connected tab. This allows direct heatsink mounting without insulating pads when drain is at high potential, reducing thermal resistance by ~0.5°C/W in typical implementations.
DMN95H2D2HCTI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 950 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.3 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1487 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AB
DMN95H2D2HCTI FAQ
1.How can I place an order for DMN95H2D2HCTI through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN95H2D2HCTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN95H2D2HCTI reliable?
The price and inventory of DMN95H2D2HCTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN95H2D2HCTI is usually 5 days.
3.What payment methods are accepted for DMN95H2D2HCTI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN95H2D2HCTI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN95H2D2HCTI?
DMN95H2D2HCTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN95H2D2HCTI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN95H2D2HCTI?
For technical support, including DMN95H2D2HCTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN95H2D2HCTI requirements.
6.How does Aetrix verify that DMN95H2D2HCTI is sourced from the original manufacturer or authorized distributors?
All DMN95H2D2HCTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN95H2D2HCTI meets industry standards.
7.What is the process for return or replacement of DMN95H2D2HCTI?
All DMN95H2D2HCTI units undergo pre-shipment inspection (PSI). If there is an issue with DMN95H2D2HCTI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN95H2D2HCTI part is unused and in its original packaging.
Return procedure for DMN95H2D2HCTI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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