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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN95H8D5HCT

Name: DMN95H8D5HCT
Brand: Diodes Incorporated
SKU: DMN95H8D5HCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN95H8D5HCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMN95H8D5HCT.pdf

Description:: MOSFET N-CH 950V 2.5A TO220AB

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Product details

Overview

DMN95H8D5HCT from Diodes Incorporated is a 950V N-channel enhancement-mode power MOSFET in TO220AB package, rated for 2.5A continuous drain current at TC = +25°C, with RDS(ON) ≤ 7Ω at VGS = 10V and BVDSS = 950V. It delivers low input capacitance (Ciss = 470pF), fast switching, and robust avalanche capability (EAS = 97mJ), enabling use in high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the DMN95H8D5HCT datasheet, DMN95H8D5HCT pinout, DMN95H8D5HCT application, or DMN95H8D5HCT equivalent, key selection criteria include its 950V breakdown rating, thermal resistance RθJC = 1°C/W, body diode recovery time tRR = 375ns, gate charge Qg = 7.9nC, and TO220AB mechanical compatibility with standard heatsinks.

Technical Context

This MOSFET employs planar silicon process technology optimized for high-voltage operation, featuring a rugged drift region design that supports 950V blocking while maintaining low RDS(ON). Its gate threshold voltage (VGS(TH) = 3.0–5.0V) ensures reliable turn-on with standard logic-level drivers.

The device integrates a fast-recovery intrinsic body diode (tRR = 375ns, QRR = 2.9µC) and exhibits low dynamic losses via Crss = 0.6pF and Qgd = 2.9nC - critical for hard-switched topologies operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	950 V - Maximum drain-source blocking voltage; enables direct use in 800V DC bus systems without series stacking.
R_DS(ON)	5.5–7 Ω @ V_GS = 10V - Low conduction loss at rated current; supports <1.75W I²R loss at 2.5A DC.
I_D (TC = 25°C)	2.5 A - Continuous drain current rating under ideal heatsink conditions; derates to 1.5A at TC = 100°C.
C_iss	470 pF - Input capacitance determines gate drive energy requirement and switching speed limit in hard-switched applications.
t_RR	375 ns - Body diode reverse recovery time; impacts commutation loss and EMI in flyback and LLC resonant converters.
E_AS	97 mJ - Single-pulse avalanche energy rating; provides margin against transient overvoltage events without failure.
R_θJC	1 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing using measured case temperature.

Pinout & Package

Package: TO220AB (Type TH), molded plastic case with matte tin-plated copper leadframe, UL 94V-0 rated, weight ≈1.85 g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source	Return path for load current	Common reference for gate drive; ties to power ground or low-side switch source in half-bridge configurations.
Gate	Control terminal	High-impedance MOS gate requiring <7.9nC total charge for full turn-on; sensitive to ESD and ringing.

Key Features

Feature	Design Value
High BVDSS rating	950V breakdown supports 800V DC-link operation with 15% safety margin per IEC 62368-1.
Low Ciss & Crss	470pF input capacitance and 0.6pF reverse transfer capacitance reduce Miller effect and improve switching controllability.
Fast body diode	375ns reverse recovery time minimizes commutation loss in discontinuous conduction mode (DCM) flyback converters.
Robust thermal performance	RθJC = 1°C/W allows 125W dissipation at ΔTJC = 125°C - compatible with standard TO220 heatsinks.
Green RoHS-compliant construction	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752A material declaration requirements.

Applications

Motor Control

Backlighting

Use Scenario: Driving brushed DC motors in industrial actuators with 400–800V DC supply rails.

IC Role / Device Role / Timing Role: High-side power switch in H-bridge or single-ended topology, handling bidirectional current up to 2.5A.

Use Value: 950V BVDSS prevents breakdown during inductive kickback; low RDS(ON) reduces heat generation during continuous PWM operation.

Use Scenario: High-voltage LED string control in commercial signage and medical display backlighting.

IC Role / Device Role / Timing Role: Constant-current switch in boost-derived LED driver, operating at 100–300kHz switching frequency.

Use Value: Fast tRR and low Qgd enable clean turn-off with minimal voltage overshoot across LED strings, reducing EMI filter burden.

DC-DC Converters

Power Management

Use Scenario: Primary-side switch in isolated 1kW telecom rectifier with 800V input stage.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or active-clamp forward topology, gated by transformer-isolated driver.

Use Value: 97mJ EAS rating absorbs leakage inductance spikes without snubber redesign; RθJC = 1°C/W simplifies thermal interface design.

Use Scenario: Overvoltage protection switch in industrial PLC power input modules with 1000V surge immunity requirement.

IC Role / Device Role / Timing Role: Crowbar or clamping element triggered by transient voltage detector circuitry.

Use Value: Guaranteed 950V VDSS and low IDSS (<1µA) ensure stable off-state blocking during long-term standby under high-humidity conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900V VDSS, RDS(ON) = 1.2Ω @ VGS = 10V, TO220FP package (shorter leads, lower L_DS)	Better conduction efficiency below 1A but lower avalanche rating (EAS = 40mJ); unsuitable for unclamped inductive switching.	Select when lower RDS(ON) dominates and avalanche stress is absent; verify gate drive strength for higher Qg (16nC).
FQP9N90C	900V VDSS, RDS(ON) = 1.4Ω @ VGS = 10V, TO220 package, no specified tRR or QRR	Lacks documented body diode recovery specs; not recommended for synchronous rectification or freewheeling in DCM.	Acceptable only in resistive or lightly inductive loads where diode conduction is avoided or externally clamped.

Compared with STP9NK90ZFP and FQP9N90C, DMN95H8D5HCT trades higher RDS(ON) for superior 950V rating, guaranteed 375ns tRR, and 97mJ EAS - making it uniquely suitable for unclamped inductive switching in 800V-class industrial power supplies.

Availability

DMN95H8D5HCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and power management systems requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEMs.

Supply support for DMN95H8D5HCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' high-voltage power transistor product line, engineered specifically for industrial and telecom power conversion where reliability under repetitive avalanche stress and high-temperature operation are mandatory.

FAQ

Is DMN95H8D5HCT suitable for automotive applications?

No - DMN95H8D5HCT is not qualified to AEC-Q101 and lacks PPAP documentation or IATF 16949-certified manufacturing evidence per the datasheet note. It is intended for industrial, telecom, and commercial power systems only. Automotive designs require explicit AEC qualification and change control, which this part does not carry.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed +150°C. With RθJC = 1°C/W and PD = 125W at TC = +25°C, sustained operation requires TC ≤ +25°C for full power - meaning active heatsinking and forced airflow are essential above ~50W dissipation. Derating curves in Figure 12 define safe area limits for pulse operation.

Does the body diode support synchronous rectification?

No - the body diode has tRR = 375ns and QRR = 2.9µC, which is too slow and lossy for efficient synchronous rectification in high-frequency (>100kHz) topologies. It is designed for freewheeling or clamping roles, not active rectification. External Schottky or GaN-based synchronous rectifiers are required for such applications.

Can DMN95H8D5HCT replace older 1000V MOSFETs like IRFP460?

Yes - with caveats: DMN95H8D5HCT matches IRFP460's 500V-rated predecessor in voltage class (950V vs 500V), but offers lower RDS(ON) (7Ω vs 0.27Ω), higher VDSS, and better thermal resistance (RθJC = 1°C/W vs 0.83°C/W). However, its higher gate charge (7.9nC vs 130nC) eases drive requirements, though layout must minimize gate loop inductance due to fast dv/dt capability (3.3V/ns).

DMN95H8D5HCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB (Type TH)

DMN95H8D5HCT FAQ

1.How can I place an order for DMN95H8D5HCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN95H8D5HCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN95H8D5HCT reliable?

The price and inventory of DMN95H8D5HCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN95H8D5HCT is usually 5 days.

3.What payment methods are accepted for DMN95H8D5HCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN95H8D5HCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN95H8D5HCT?

DMN95H8D5HCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN95H8D5HCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN95H8D5HCT?

For technical support, including DMN95H8D5HCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN95H8D5HCT requirements.

6.How does Aetrix verify that DMN95H8D5HCT is sourced from the original manufacturer or authorized distributors?

All DMN95H8D5HCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN95H8D5HCT meets industry standards.

7.What is the process for return or replacement of DMN95H8D5HCT?

All DMN95H8D5HCT units undergo pre-shipment inspection (PSI). If there is an issue with DMN95H8D5HCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN95H8D5HCT part is unused and in its original packaging.

Return procedure for DMN95H8D5HCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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