Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN95H8D5HCTI

Name: DMN95H8D5HCTI
Brand: Diodes Incorporated
SKU: DMN95H8D5HCTI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMN95H8D5HCTI

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: DMN95H8D5HCTI.pdf

Description:: MOSFET N-CHANNEL 950V ITO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMN95H8D5HCTI from Diodes Incorporated is a 950V N-channel enhancement-mode power MOSFET in ITO-220AB (Type TH) package, rated for 2.5A continuous drain current at T_C = +25°C, with R_DS(ON) = 5.5Ω (typ) @ V_GS = 10V and low input capacitance (C_iss = 470pF), designed for high-voltage DC-DC converters and motor control circuits requiring robust avalanche capability (E_AS = 97mJ).

For engineers reviewing the DMN95H8D5HCTI datasheet, DMN95H8D5HCTI pinout, DMN95H8D5HCTI application, or DMN95H8D5HCTI equivalent, key selection criteria include its 950V BVDSS rating, thermal resistance (R_θJC = 4.2°C/W), fast switching performance (t_R = 21ns), body diode recovery time (t_RR = 375ns), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage blocking and low conduction loss in hard-switched topologies. Its gate threshold voltage (V_GS(TH) = 3.0–5.0V) ensures reliable turn-on with standard logic-level drivers while maintaining noise immunity.

The device integrates a monolithic body diode with controlled reverse recovery (Q_RR = 2.9µC, t_RR = 375ns) and supports pulsed drain currents up to 3A. Thermal design is enabled by its low junction-to-case resistance and ITO-220AB package's direct heatsink mounting capability.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	950V - Withstands up to 950V drain-source voltage before breakdown, enabling use in 800V-class industrial power supplies.
RDS(ON)	5.5Ω (typ) @ VGS = 10V - Delivers low conduction loss at rated current, reducing I²R heating in continuous operation.
ID (Cont)	2.5A @ TC = +25°C - Supports sustained load current when mounted on infinite heatsink per JEDEC test condition.
Ciss	470pF @ VDS = 25V - Low input capacitance enables faster gate charging and reduced driver power requirements.
EAS	97mJ - Guaranteed avalanche energy rating allows safe operation under inductive switching stress without external snubbers.
tRR	375ns - Controlled body diode recovery minimizes switching losses and voltage spikes in flyback and LLC resonant converters.
RθJC	4.2°C/W - Enables precise junction temperature estimation and thermal margining when heatsink interface resistance is known.

Pinout & Package

Package: ITO-220AB (Type TH), through-hole, single-ended heatsink-mountable plastic package with matte tin-plated copper leadframe (MIL-STD-202 compliant). Weight: 1.85g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab is electrically connected to drain; must be isolated from heatsink unless circuit requires common-drain configuration.
Source	Reference node for gate drive and current return	Low-inductance connection critical for stable switching; ties to power ground plane in high-dI/dt applications.
Gate	Control electrode for channel modulation	High-impedance input requiring <2.9nC total gate charge; sensitive to ESD and layout parasitics.

Key Features

Feature	Design Value
High BVDSS rating	950V breakdown voltage supports primary-side switching in offline SMPS up to 400V AC input with safety margin.
Low Ciss and Crss	470pF input capacitance and 0.6pF reverse transfer capacitance reduce Miller effect and improve dv/dt immunity.
Controlled body diode	375ns reverse recovery time and 2.9µC QRR enable efficient freewheeling in synchronous rectification and half-bridge topologies.
Green RoHS compliance	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) molding compound meets IEC 61249-2-21 and automotive environmental standards.
Thermal robustness	150°C max junction temperature and 4.2°C/W RθJC allow operation in high-ambient industrial environments with minimal derating.

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor drive in industrial automation systems operating from 300–400V DC bus.

IC Role / Device Role / Timing Role: High-side switch controlling motor phase current with PWM frequencies up to 100kHz.

Use Value: 950V BVDSS prevents breakdown during back-EMF transients; 97mJ EAS absorbs inductive kickback without clamping diodes.

Use Scenario: Primary-side switch in 100W offline flyback converter for industrial IoT gateway power supply.

IC Role / Device Role / Timing Role: Main power switch turning on/off at 65kHz with 50% duty cycle under universal AC input (85–265VAC).

Use Value: Low RDS(ON) reduces conduction loss at full load; fast tR/tF (21ns/17ns) minimizes switching loss at high frequency.

Backlighting

Power Management

Use Scenario: LED string current regulation in high-brightness industrial display backlight using boost topology.

IC Role / Device Role / Timing Role: Switching element in boost converter delivering constant current to 40–60V LED strings.

Use Value: 2.5A ID rating supports >30W output; low Ciss enables clean gate drive with minimal overshoot in compact PCB layouts.

Use Scenario: HV auxiliary supply switch in telecom base station power management unit handling 48V–57V input.

IC Role / Device Role / Timing Role: Standby mode controller isolating secondary-side circuitry during low-power sleep states.

Use Value: Ultra-low IDSS (<1µA) ensures negligible leakage current in always-on monitoring circuits over 10-year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900V BVDSS, 1.6A ID, RDS(ON) = 8Ω @ 10V, TO-220FP package (full-pack)	Lower current rating and higher RDS(ON); suitable only for <1.5A loads with tighter thermal constraints	Select if footprint compatibility with TO-220FP is required and peak current remains below 1.6A.
IXTP90N10P	1000V BVDSS, 90A ID, RDS(ON) = 0.12Ω @ 10V, TO-220 package, higher cost and larger die	Over-specified for 2.5A use cases; introduces unnecessary gate drive complexity and cost	Choose only when system requires >50A surge capability or future-proofing for higher power upgrades.

Compared with STP9NK90ZFP and IXTP90N10P, DMN95H8D5HCTI delivers optimal balance of 950V rating, 2.5A current capability, and 5.5Ω RDS(ON) in a thermally efficient ITO-220AB package-making it ideal for cost-sensitive, space-constrained 50–150W industrial power stages.

Availability

DMN95H8D5HCTI is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting, and power management applications requiring stable component supply, long-term lifecycle support, and traceable green manufacturing.

Supply support for DMN95H8D5HCTI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

DMN95H8D5HCTI belongs to Diodes' high-voltage power MOSFET product line, engineered for ruggedized operation in off-line power conversion, motor drives, and lighting systems where voltage margin, avalanche robustness, and thermal stability are critical.

FAQ

Is DMN95H8D5HCTI suitable for automotive applications?

No-DMN95H8D5HCTI is not qualified to AEC-Q101 and is marked "NOT RECOMMENDED FOR NEW DESIGN." Diodes offers automotive-grade alternatives (e.g., DMN95H8D5HCTQ) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. This part is intended for industrial and commercial power systems only.

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (V_GSS) is ±30V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –20V to +20V for reliable long-term performance; gate drive circuits must include clamping (e.g., Zener diodes) to prevent transient overshoot beyond ±20V.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = 1.2V @ I_S = 2A and t_RR = 375ns-higher forward drop and slower recovery than discrete Schottky diodes. It is sufficient for non-synchronous flyback or low-frequency freewheeling but not recommended for high-efficiency synchronous rectification above 50kHz without external diode paralleling.

Can DMN95H8D5HCTI be used in parallel configurations?

Parallel operation is not recommended due to positive temperature coefficient of R_DS(ON) being insufficient to ensure current sharing across units. Mismatched V_GS(TH) (3.0–5.0V) and dynamic parameters (C_iss, Q_g) increase imbalance risk. For higher current, select a single higher-rated MOSFET or verify matching with production binning data.

DMN95H8D5HCTI Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: ITO-220AB

DMN95H8D5HCTI FAQ

1.How can I place an order for DMN95H8D5HCTI through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN95H8D5HCTI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN95H8D5HCTI reliable?

The price and inventory of DMN95H8D5HCTI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN95H8D5HCTI is usually 5 days.

3.What payment methods are accepted for DMN95H8D5HCTI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN95H8D5HCTI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN95H8D5HCTI?

DMN95H8D5HCTI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN95H8D5HCTI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN95H8D5HCTI?

For technical support, including DMN95H8D5HCTI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN95H8D5HCTI requirements.

6.How does Aetrix verify that DMN95H8D5HCTI is sourced from the original manufacturer or authorized distributors?

All DMN95H8D5HCTI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN95H8D5HCTI meets industry standards.

7.What is the process for return or replacement of DMN95H8D5HCTI?

All DMN95H8D5HCTI units undergo pre-shipment inspection (PSI). If there is an issue with DMN95H8D5HCTI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN95H8D5HCTI part is unused and in its original packaging.

Return procedure for DMN95H8D5HCTI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…