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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMNH10H021SPSW-13

Name: DMNH10H021SPSW-13
Brand: Diodes Incorporated
SKU: DMNH10H021SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMNH10H021SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMNH10H021SPSW-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMNH10H021SPSW from Diodes Incorporated is a 100V, 58A N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, optimized for high-efficiency DC-DC converters. It delivers 28 mΩ R_DS(ON) at V_GS = 10 V, operates up to +175°C junction temperature, and features wettable flanks for automated optical inspection.

For engineers reviewing the DMNH10H021SPSW datasheet, DMNH10H021SPSW pinout, DMNH10H021SPSW application, or DMNH10H021SPSW equivalent, this page provides verified electrical parameters, thermal performance data, package mechanical details, and real-world power management use cases - all confirmed against Diodes' DS42852 Rev. 2-2 datasheet.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 17 ns, t_F = 24 ns) and low gate charge (Q_g = 71 nC). Its 100% UIS-tested ruggedness supports reliable operation under inductive load transients.

The PowerDI5060-8 (SWP) package integrates an exposed drain pad for low R_θJC = 1.05°C/W and thermally efficient PCB mounting. The device's V_GS(TH) range (2.0–4.0 V) ensures robust gate drive compatibility with standard 3.3 V and 5 V logic controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports input rails up to 48 V nominal systems with 2× safety margin for transient spikes.
R_DS(ON)	28 mΩ @ V_GS = 10 V, I_D = 20 A - Enables ≤1.1 W conduction loss at 58 A continuous current with proper heatsinking.
I_D (T_C = 25°C)	58 A - Rated for high-current synchronous rectification or primary-side switching in 100–300 W DC-DC stages.
T_J Range	−55°C to +175°C - Qualified for under-hood automotive, industrial motor drives, and high-ambient telecom power supplies.
Q_g	71 nC - Matches standard gate drivers (e.g., UCC27531, TC4427) without requiring external boost circuitry.
E_AS	157 mJ - Withstands single-pulse inductive energy events up to L = 0.1 mH without failure.
C_iss	3789 pF - Low input capacitance reduces gate drive power and improves high-frequency efficiency above 500 kHz.

Pinout & Package

PowerDI5060-8 (SWP) is a surface-mount, thermally enhanced 8-pin package with an exposed drain pad on the bottom. It features wettable flank leads for solder joint inspection and a 1.05°C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
S (Source)	Power return node for channel current	Internally connected to 4 pins (pins 1, 3, 6, 8); low-inductance source path for high di/dt stability.
D (Drain)	Main current-carrying terminal	Exposed metal pad (bottom side) and 4 pins (pins 2, 4, 5, 7); primary thermal and current path to PCB copper.
G (Gate)	Control electrode	Single pin (pin 4 top view marking); isolated from drain/source; requires <20 V max gate drive.

Key Features

Feature	Design Value
+175°C rated junction temperature	Enables operation in engine control units, solar microinverters, and industrial PLCs without derating at ambient >125°C.
100% production UIS tested	Guarantees avalanche robustness for unclamped inductive switching in buck/boost/flyback topologies.
Wettable flank leads	Supports AOI (automated optical inspection) of solder fillets on all 8 side terminals - eliminates X-ray requirement.
Low R_DS(ON) × Q_g figure-of-merit	798 Ω·nC - Balances conduction and switching losses for optimal efficiency in 300–1000 kHz SMPS designs.
Halogen- and antimony-free "Green" construction	Meets IPC-1752A reporting requirements and EU RoHS 3 (2015/863/EU) with <900 ppm Br/Cl and <1000 ppm Sb.

Applications

Automotive DC-DC Converters

Industrial Motor Drive Gate Drivers

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in ADAS camera modules and infotainment head units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter stage, switching at 600 kHz.

Use Value: 28 mΩ R_DS(ON) limits conduction loss to <0.8 W at 40 A peak, enabling compact 10 mm × 10 mm layout without forced air cooling.

Use Scenario: Half-bridge high-side switch in 24 V servo amplifier output stage driving BLDC motors.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET paired with bootstrap gate driver (e.g., IRS21844).

Use Value: 24 ns fall time and 71 nC Q_g allow clean 20 kHz PWM edges with <5% dead-time overhead, reducing torque ripple.

Telecom Base Station Power Supplies

Renewable Energy Microinverters

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for remote radio units.

IC Role / Device Role / Timing Role: 100 V-rated main switch handling repetitive 100 V bus transients during hot-swap events.

Use Value: 157 mJ E_AS withstands 100 V × 10 A × 150 µs inductive kickback without latch-up or parametric shift.

Use Scenario: DC link switch in 600 V PV string-connected microinverter with integrated MPPT.

IC Role / Device Role / Timing Role: Low-loss freewheeling path during synchronous rectification phase in interleaved LLC resonant stage.

Use Value: Body diode V_SD = 0.7–1.2 V at 1 A enables <0.5 W reverse conduction loss, improving full-load efficiency by 0.4% over Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP50N10P	TO-220 package, R_DS(ON) = 22 mΩ @ 10 V but higher C_iss (4500 pF), no wettable flanks.	Requires manual soldering and thermal compound; unsuitable for AOI-based SMT lines.	Select when board-level thermal mass permits TO-220 mounting and gate drive can support higher Q_g.
DMTH10H021LPS-13	Same die, PowerDI3333 package (R_θJC = 1.4°C/W), lower I_D rating (42 A), identical R_DS(ON).	Limited to ≤200 W applications due to reduced current capability and thermal resistance.	Choose for space-constrained layouts where 58 A rating is unnecessary and footprint must shrink by 40%.

Compared with IXTP50N10P and DMTH10H021LPS-13, DMNH10H021SPSW uniquely combines 58 A current capacity, 1.05°C/W thermal resistance, and AOI-compatible wettable flanks - making it the only option qualified for high-volume automotive SMT production with zero rework risk.

Availability

DMNH10H021SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drive gate drivers, and telecom base station power supplies requiring stable component supply across multi-year production cycles.

Supply support for DMNH10H021SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-reliability, high-temperature power conversion in automotive, industrial, and communications infrastructure.

FAQ

What is the maximum safe operating temperature for DMNH10H021SPSW?

The device is rated for continuous operation from −55°C to +175°C junction temperature. At T_C = +100°C, its continuous drain current drops to 41 A per datasheet derating curve. PCB layout must maintain R_θJA ≤ 34°C/W using 1-inch² copper pour to sustain full 58 A rating.

Does DMNH10H021SPSW require a gate resistor for EMI control?

Yes - a 6.0 Ω gate resistor is used in the datasheet's switching time test conditions (t_D(ON), t_F). This value balances EMI suppression and switching speed; values below 3.3 Ω increase dv/dt-induced noise, while above 10 Ω raises switching losses by >15% at 500 kHz.

Can DMNH10H021SPSW be used in synchronous rectification mode?

Yes - its body diode exhibits V_SD = 0.7–1.2 V at 1 A and t_RR = 46 ns, enabling efficient synchronous rectification in buck and LLC topologies. For best results, pair with a gate driver that supports adaptive dead-time control to prevent shoot-through.

Is the PowerDI5060-8 (SWP) package compatible with standard reflow profiles?

Yes - it meets J-STD-020 Level 1 moisture sensitivity and is qualified for lead-free reflow with peak temperatures up to 260°C. Recommended profile uses ramp rate ≤3°C/s, soak at 150–200°C for 60–120 s, and peak at 245 ±5°C for ≤60 s.

DMNH10H021SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3789 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.8W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMNH10H021SPSW-13 FAQ

1.How can I place an order for DMNH10H021SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH10H021SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH10H021SPSW-13 reliable?

The price and inventory of DMNH10H021SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H021SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMNH10H021SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H021SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH10H021SPSW-13?

DMNH10H021SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH10H021SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH10H021SPSW-13?

For technical support, including DMNH10H021SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H021SPSW-13 requirements.

6.How does Aetrix verify that DMNH10H021SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMNH10H021SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H021SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMNH10H021SPSW-13?

All DMNH10H021SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H021SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH10H021SPSW-13 part is unused and in its original packaging.

Return procedure for DMNH10H021SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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