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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMNH10H028SCT

Name: DMNH10H028SCT
Brand: Diodes Incorporated
SKU: DMNH10H028SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMNH10H028SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMNH10H028SCT.pdf

Description:: MOSFET N-CH 100V 60A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMNH10H028SCT from Diodes Incorporated is a 100V, 28mΩ (max @ V_GS = 10V), 60A N-channel enhancement-mode MOSFET in TO220AB package, rated for continuous operation up to +175°C junction temperature. It delivers low conduction loss and fast switching for high-efficiency power conversion in motor control, DC-DC converters, and backlighting systems.

For engineers reviewing the DMNH10H028SCT datasheet, DMNH10H028SCT pinout, DMNH10H028SCT application, or DMNH10H028SCT equivalent, key selection criteria include its 100V V_DSS, 28mΩ R_DS(ON) at 10V gate drive, 175°C thermal rating, 100% UIS capability, and TO220AB mechanical compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs planar silicon technology optimized for ruggedness and thermal stability. Its 1 Ω·cm² figure-of-merit (R_DS(ON) × Q_g ≈ 0.89 Ω·nC) balances switching speed and conduction loss, while the 100% unclamped inductive switching (UIS) rating of 27A/37mJ ensures robustness under transient overloads.

The device features low input capacitance (C_iss = 1942 pF) and fast turn-off characteristics (t_D(OFF) = 14.0 ns, t_F = 3.2 ns), enabling high-frequency operation in synchronous buck and half-bridge topologies without excessive gate drive power or shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands 100V drain-source blocking voltage before avalanche onset, suitable for 48V bus and automotive 36V nominal systems.
R_DS(ON) max	28 mΩ @ V_GS = 10V - Enables ≤1.68W conduction loss at 60A, reducing heatsink requirements in high-current power stages.
I_D max	60 A @ T_C = +25°C - Supports high-current load switching when mounted on adequately sized heatsinks per TO220AB thermal interface.
T_J max	+175°C - Allows reliable operation in under-hood automotive, industrial motor drives, and sealed power supplies where ambient exceeds 125°C.
C_iss	1942 pF - Low input capacitance reduces gate drive current demand and improves switching efficiency above 100 kHz.
Q_g	31.9 nC @ V_GS = 10V - Determines total gate charge required for full enhancement; enables predictable gate driver sizing (e.g., 1.5A peak for 21 ns rise).
E_AS	37 mJ - Energy-handling capability during inductive turn-off events, critical for motor phase-leg and flyback snubberless designs.

Pinout & Package

Package: TO220AB - Molded plastic case with matte tin-plated copper leadframe, UL 94V-0 rated, 1.85 g weight, designed for through-hole mounting and direct heatsink attachment via tab (Drain-connected). Thermal resistance R_θJC = 1°C/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or return path; carries full load current in low-side switch configurations.
2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires ~31.9 nC total charge to fully enhance; sensitive to ESD and ringing.
3 (Drain)	Power output (D)	Tab-connected drain terminal; electrically tied to metal tab; must be isolated from heatsink unless system common is drain-referenced.

Key Features

Feature	Design Value
100% Unclamped Inductive Switching (UIS)	Rated for 27A/37mJ single-pulse energy - eliminates need for external clamping diodes in relay drivers and solenoid controls.
+175°C Junction Rating	Qualified per AEC-Q101 - supports operation in engine bay, industrial enclosures, and sealed LED drivers without derating at high ambient.
Low Input/Output Leakage	I_DSS ≤ 1 µA @ 100V, I_GSS ≤ ±100 nA - minimizes standby power loss and gate bias drift in battery-powered or always-on systems.
Lead-Free & Halogen-Free	RoHS 2 compliant; <900 ppm Br/Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance mandates without sacrificing thermal performance.
Fast Body Diode Recovery	t_RR = 35.3 ns, Q_RR = 46.8 nC - reduces cross-conduction losses and EMI in synchronous rectification and half-bridge freewheeling paths.

Applications

Motor Control

DC-DC Converters

Use Scenario: High-current H-bridge driver for 24–48V brushed DC motors in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side power switch handling 40–60A peak currents with fast PWM commutation at 20–50 kHz.

Use Value: 28mΩ R_DS(ON) limits I²R loss to ≤1.12W at 40A, enabling compact heatsink design while maintaining >95% efficiency at full load.

Use Scenario: Primary-side synchronous rectifier in 100W isolated forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: 35.3 ns reverse recovery time and low Q_RR reduce switching loss and voltage spikes, improving reliability vs. discrete diode solutions.

Backlighting

Power Management

Use Scenario: LED string current regulator in automotive center-stack LCD backlight with 36V input range.

IC Role / Device Role / Timing Role: Constant-current switch controlling 8–12 series white LEDs at 150–300 mA with PWM dimming.

Use Value: 175°C rating allows placement near hot LED drivers without thermal throttling; low leakage preserves dimming linearity at low duty cycles.

Use Scenario: Main power switch in 50W industrial PoE++ (IEEE 802.3bt) powered device input stage.

IC Role / Device Role / Timing Role: Hot-swap FET managing inrush current and fault isolation between PSE and PD circuitry.

Use Value: 100V V_DSS accommodates 57V PoE++ open-circuit voltage plus transients; 100% UIS withstands cable-disconnect surges without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(ON) = 11.5mΩ @ 10V, but V_DSS = 100V and T_J = +175°C; higher Q_g (62 nC) increases gate drive loss.	Better conduction efficiency at lower currents (<30A); less suitable for high-frequency (>200 kHz) switching due to higher C_iss (3800 pF).	Prefer when minimizing conduction loss dominates over switching loss; verify gate driver can supply 62 nC reliably.
IXTP110N10T	R_DS(ON) = 10.5mΩ @ 10V, V_DSS = 100V, T_J = +175°C; no AEC-Q101 qualification; R_θJC = 0.8°C/W.	Higher thermal performance margin but lacks automotive reliability validation; not recommended for automotive-grade designs requiring AEC-Q101.	Select only for non-automotive industrial use where maximum thermal headroom is critical and qualification is not mandated.

Compared with STP110N10F7 and IXTP110N10T, DMNH10H028SCT offers balanced trade-offs: moderate R_DS(ON) and Q_g, AEC-Q101 qualification, and proven UIS robustness-making it optimal for cost-sensitive, thermally constrained, and reliability-critical 48V power stages.

Availability

DMNH10H028SCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and backlighting applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for DMNH10H028SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and consumer markets.

This MOSFET belongs to Diodes' "Advanced Power" product line, engineered for high-temperature operation and ruggedized switching in demanding power conversion and motor drive applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH10H028SCT supports 42A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO220AB package and must be applied when heatsink temperature exceeds 25°C. Designers should verify junction temperature using R_θJC = 1°C/W and actual power dissipation.

Is the metal tab electrically connected to any internal terminal?

Yes-the metal tab of the TO220AB package is internally connected to the Drain (D) terminal. This requires electrical isolation from the heatsink unless the system's power ground is referenced to the drain node. Standard practice uses insulating pads or shoulder washers with thermal grease to maintain isolation while ensuring thermal transfer.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is strongly recommended to control dV/dt and prevent oscillation during switching. With Q_g = 31.9 nC and typical gate driver rise/fall times targeting <20 ns, a 5–10 Ω series resistor limits peak gate current to ~1–2 A and dV/dt to safe levels, reducing EMI and preventing unintended turn-on from Miller coupling.

Can DMNH10H028SCT replace older-generation 100V MOSFETs in existing PCB layouts?

Yes-it uses the industry-standard TO220AB footprint and pinout (Source-Gate-Drain), making it a direct mechanical and electrical drop-in replacement for legacy 100V N-channel MOSFETs in the same package. No layout changes are needed, though gate drive strength and thermal management should be re-verified due to its lower R_DS(ON) and higher current capability.

DMNH10H028SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1942 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMNH10H028SCT FAQ

1.How can I place an order for DMNH10H028SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH10H028SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH10H028SCT reliable?

The price and inventory of DMNH10H028SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SCT is usually 5 days.

3.What payment methods are accepted for DMNH10H028SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH10H028SCT?

DMNH10H028SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH10H028SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH10H028SCT?

For technical support, including DMNH10H028SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SCT requirements.

6.How does Aetrix verify that DMNH10H028SCT is sourced from the original manufacturer or authorized distributors?

All DMNH10H028SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SCT meets industry standards.

7.What is the process for return or replacement of DMNH10H028SCT?

All DMNH10H028SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH10H028SCT part is unused and in its original packaging.

Return procedure for DMNH10H028SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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