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Diodes Incorporated DMNH10H028SK3-13
- Part No.:
- DMNH10H028SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMNH10H028SK3-13.pdf
- Description:
- MOSFET N-CH 100V 55A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:2,634
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Product details
Overview
DMNH10H028SK3-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous drain current of 55A at TC = +25°C and featuring RDS(ON) = 28 mΩ @ VGS = 10V. It supports automotive-grade reliability with AEC-Q qualification, operates up to +175°C junction temperature, and delivers low switching losses via Qg = 36 nC - used in engine management systems and high-efficiency DC-DC converters.
For engineers reviewing the DMNH10H028SK3-13 datasheet, DMNH10H028SK3-13 pinout, DMNH10H028SK3-13 application, or DMNH10H028SK3-13 equivalent, key selection criteria include its 100V BVDSS rating, 28mΩ on-resistance at 10V gate drive, 175°C thermal capability, unclamped inductive switching robustness, and TO252 mechanical compatibility with high-power PCB layouts.
Technical Context
This MOSFET employs planar silicon process technology optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (VGS(TH) = 2.0–3.3V) enables reliable turn-on with standard 3.3V/5V logic-level drivers, while its 1.2°C/W RθJC supports efficient heat transfer to heatsink-equipped DPAK footprints.
The device integrates a robust body diode with tRR = 35 ns and QRR = 47 nC, enabling hard-switched synchronous rectification in buck converters. Its 100% UIS-rated avalanche capability (EAS = 43 mJ) ensures survivability under transient overloads without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands 100V drain-source blocking voltage before breakdown, suitable for 48V automotive bus and industrial 24–48V power rails. |
| RDS(ON) Max | 28 mΩ @ VGS = 10V - Delivers ≤1.1W conduction loss at 55A, minimizing thermal stress in high-current switching nodes. |
| ID Max (TC=25°C) | 55 A - Supports continuous high-current loads such as solenoid drivers and motor phase switches without derating at ambient ≤25°C. |
| Qg Total | 36 nC @ VGS = 10V - Enables fast turn-on with <6.4ns delay and <5.8ns rise time using low-impedance gate drivers, reducing switching energy loss. |
| TJ Operating Range | −55°C to +175°C - Qualified per AEC-Q standards for under-hood automotive applications where ambient exceeds 125°C. |
| EAS | 43 mJ @ L = 0.1 mH - Sustains single-pulse inductive energy without failure, eliminating need for external clamping in relay/snubber circuits. |
| RθJC | 1.2 °C/W - Allows direct thermal coupling to heatsinks or copper planes, enabling >3W dissipation in optimized TO252 mounting configurations. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, 3-terminal plastic package with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or return path; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <100nA leakage; driven by logic-level or dedicated gate driver ICs. |
| Pin 3 (Drain) | Power output (D) | Connected to high-voltage rail or inductive load; electrically and thermally tied to large copper pad on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C Junction Rating | Enables operation in engine bay, transmission control units, and other high-ambient locations without thermal derating penalties. |
| 100% Unclamped Inductive Switching (UIS) | Validated avalanche energy handling eliminates need for external protection components in relay driving and solenoid control. |
| Low Qg (36 nC) | Reduces gate drive power and enables use of compact, cost-effective drivers in space-constrained modules. |
| RoHS 3 & Halogen-Free | Complies with EU Directive 2015/863/EU and Diodes' "Green" definition (<900ppm Br/Cl, <1000ppm Sb), supporting eco-design requirements. |
| AEC-Q Qualified | Meets JEDEC-based automotive reliability standards for vibration, temperature cycling, and HTOL, enabling drop-in use in safety-critical ECUs. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: Driving fuel injectors and ignition coils in gasoline/diesel powertrains under hood temperatures up to 150°C ambient. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed 12V/48V loads with microsecond-scale timing precision. Use Value: 175°C rating avoids thermal shutdown during peak-load transients; 43mJ EAS withstands coil flyback without snubber diodes. |
Use Scenario: Controlling door locks, window lift motors, and lighting relays in centralized body electronics units. IC Role / Device Role / Timing Role: Low-side load switch interfacing with CAN/LIN microcontrollers for PWM or on/off actuation. Use Value: 28mΩ RDS(ON) limits I²R heating at 20A peak, enabling compact PCB layout without forced air cooling. |
| DC-DC Converters | Industrial Motor Drives |
|
Use Scenario: Synchronous rectifier in 48V-to-12V buck converters for ADAS camera modules and infotainment power supplies. IC Role / Device Role / Timing Role: Secondary-side power FET operating at 200–500kHz with body diode conduction during dead-time. Use Value: 35ns tRR and 47nC QRR minimize reverse recovery loss and cross-conduction risk in high-frequency operation. |
Use Scenario: Half-bridge leg in 24V/48V BLDC motor controllers for HVAC blowers and seat adjustment actuators. IC Role / Device Role / Timing Role: Power stage switch subjected to repetitive inductive commutation and PWM edge transitions. Use Value: 55A ID rating and 1.2°C/W RθJC support sustained 30A RMS current with minimal heatsink area in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N10F7 | 100V, 130A, RDS(ON) = 5.5mΩ @ 10V, TO263 package, lower RDS(ON) but larger footprint and higher Qg (65nC). | Requires larger PCB area and higher gate drive strength; better suited for high-current, low-duty-cycle applications like starter relays. | Select when lower conduction loss dominates over gate drive complexity and board space constraints. |
| IXTP50N10P | 100V, 50A, RDS(ON) = 30mΩ @ 10V, TO220 package, no AEC-Q qualification, RθJC = 1.5°C/W. | Lacks automotive qualification and has inferior thermal resistance; limited to industrial non-automotive use cases. | Choose only for cost-sensitive, non-automotive designs where +175°C operation and AEC-Q compliance are not required. |
Compared with STL130N10F7 and IXTP50N10P, DMNH10H028SK3-13 offers optimal balance of automotive qualification, thermal performance (1.2°C/W), and compact TO252 footprint - making it preferred for space-constrained, high-reliability 48V automotive subsystems.
Availability
DMNH10H028SK3-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply across automotive production lifecycles.
Supply support for DMNH10H028SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This MOSFET belongs to Diodes' Automotive PowerFET product line, engineered specifically for under-hood and chassis-mounted applications demanding AEC-Q qualification, extended temperature operation, and robust avalanche performance.
FAQ
Is DMNH10H028SK3-13 qualified for automotive applications?
Yes. The DMNH10H028SK3-13 is AEC-Q qualified per JEDEC standards for high-reliability automotive use, including temperature cycling, humidity testing, and high-temperature operating life. Its +175°C junction rating and 100% UIS rating meet stringent under-hood requirements for engine control and body electronics.
What is the maximum continuous drain current at 100°C case temperature?
At TC = +100°C, the maximum continuous drain current is 39A, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252 package under real-world PCB thermal conditions with standard 2oz copper layout.
Does this MOSFET require a gate resistor for safe operation?
A gate resistor is recommended to control dV/dt and prevent oscillation during switching. Typical values range from 2.2Ω to 10Ω depending on driver strength and layout parasitics; the datasheet specifies tD(ON), tR, tD(OFF), and tF using RG = 3Ω, confirming suitability for low-impedance gate drive.
Can DMNH10H028SK3-13 be used in synchronous rectification topologies?
Yes. Its low RDS(ON) (28mΩ), fast body diode (tRR = 35ns), and low QRR (47nC) make it suitable for secondary-side synchronous rectification in isolated DC-DC converters operating up to 500kHz, especially where thermal headroom is constrained.
DMNH10H028SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2245 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMNH10H028SK3-13 FAQ
1.How can I place an order for DMNH10H028SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH10H028SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH10H028SK3-13 reliable?
The price and inventory of DMNH10H028SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SK3-13 is usually 5 days.
3.What payment methods are accepted for DMNH10H028SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH10H028SK3-13?
DMNH10H028SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH10H028SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH10H028SK3-13?
For technical support, including DMNH10H028SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SK3-13 requirements.
6.How does Aetrix verify that DMNH10H028SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMNH10H028SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SK3-13 meets industry standards.
7.What is the process for return or replacement of DMNH10H028SK3-13?
All DMNH10H028SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH10H028SK3-13 part is unused and in its original packaging.
Return procedure for DMNH10H028SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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