Diodes Incorporated DMNH10H028SK3Q-13
- Part No.:
- DMNH10H028SK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMNH10H028SK3Q-13.pdf
- Description:
- MOSFET N-CH 100V 55A TO252
- Quantity:
- Payment:

- Shipping:

Inventory:2,069
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMNH10H028SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 100V VDSS, 28 mΩ RDS(ON) @ VGS = 10 V, and 55 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and is designed for automotive engine management and DC-DC converters.
For engineers reviewing the DMNH10H028SK3Q-13 datasheet, DMNH10H028SK3Q-13 pinout, DMNH10H028SK3Q-13 application, or DMNH10H028SK3Q-13 equivalent, key selection criteria include its 100% unclamped inductive switching rating, low Qg (36 nC), thermal robustness (RθJC = 1.2 °C/W), and PPAP-capable automotive qualification.
Technical Context
This MOSFET employs a planar trench-gated silicon structure optimized for high-voltage automotive switching. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the low RDS(ON) and 22 nC Qg at VGS = 6 V support efficient operation in synchronous rectification and high-frequency DC-DC topologies.
The device integrates a body diode with tRR = 35 ns and QRR = 47 nC, enabling fast recovery in flyback and buck-boost configurations. Its 1.2 °C/W junction-to-case thermal resistance and IATF 16949-certified manufacturing ensure consistent performance under sustained thermal stress in under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V automotive systems with transient margin. |
| RDS(ON) | 28 mΩ max @ VGS = 10 V - Enables ≤1.1 W conduction loss at 55 A, reducing heatsink requirements in space-constrained modules. |
| Qg | 36 nC @ VGS = 10 V - Supports <100 kHz switching with minimal driver power, critical for compact DC-DC converter designs. |
| TJ max | +175°C - Allows direct mounting on hot surfaces (e.g., engine control units) without derating below ambient +125°C. |
| EAS | 43 mJ - Sustains single-pulse avalanche energy up to 43 mJ, eliminating need for external snubbers in inductive load switching. |
| ID cont | 55 A @ TC = +25°C - Delivers high current density in TO252 footprint, enabling replacement of larger packages in legacy designs. |
| VGS(TH) | 2.0–4.0 V - Ensures robust turn-on with automotive microcontrollers and gate drivers operating at 3.3 V or 5 V logic levels. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, 3-terminal plastic package with exposed drain pad for thermal dissipation. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side return path; connects to ground or low-side switch node; electrically tied to internal substrate. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate; requires <100 nA leakage current drive; sensitive to ESD per MIL-STD-202. |
| Pin 3 (Drain) | Power output | Exposed copper pad (top view); primary heat transfer path to PCB copper; carries full load current and avalanche energy. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, traceability, and IATF 16949 manufacturing compliance. |
| 100% unclamped inductive switching (UIS) | Guaranteed avalanche ruggedness up to 29 A and 43 mJ, enabling reliable operation without external clamping circuits. |
| Low RDS(ON) × Qg figure-of-merit | 28 mΩ × 36 nC = 1008 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 100–500 kHz DC-DC converters. |
| +175°C maximum junction temperature | Enables operation in engine bay locations where ambient exceeds +125°C, reducing need for forced cooling or thermal derating. |
| Halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU) with Br+Cl <1500 ppm and Sb <1000 ppm; supports end-of-life recycling and environmental compliance. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems with 12 V nominal supply and 60 V transients. IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation with precise 1–5 ms pulse width and 100 kHz PWM capability. Use Value: Low Qg ensures fast turn-on/turn-off timing accuracy; 175°C rating allows placement near combustion chamber without thermal throttling. |
Use Scenario: Window lift motor H-bridge half-bridge in door module with reverse battery protection and load dump tolerance. IC Role / Device Role / Timing Role: N-channel high-side switch in bidirectional motor control, handling 30 A peak stall current and 100 V load dump spikes. Use Value: 100 V VDSS and 43 mJ EAS eliminate need for external TVS; RDS(ON) <28 mΩ limits I²R heating during extended window-up cycles. |
| Automotive DC-DC Converters | On-Board Charger (OBC) Auxiliary Supplies |
|
Use Scenario: Synchronous rectifier in 48 V–12 V buck converter for ADAS domain controllers, operating at 250 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 28 mΩ RDS(ON) cuts forward voltage drop by >80% vs. 0.5 V Schottky, increasing conversion efficiency from 92% to 95.3% at 20 A. |
Use Scenario: Primary-side switch in isolated flyback auxiliary supply powering OBC control circuitry from 400 V battery rail. IC Role / Device Role / Timing Role: 100 V-rated power switch in quasi-resonant topology, handling 100 V reflected transients and 35 ns body diode recovery. Use Value: 35 ns tRR and low QRR minimize switching loss and EMI during zero-voltage switching transitions at 65 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N10F7 | 100 V, 2.2 mΩ @ 10 V, 130 A, PowerFLAT 5x6 package; lower RDS(ON) but higher Qg (65 nC) | Requires larger PCB area and more complex gate drive due to higher capacitance; better for ultra-low-loss 12 V systems, not DPAK-replaceable | Select when board space permits larger footprint and thermal design supports higher peak currents. |
| IXTP50N10P | 100 V, 22 mΩ @ 10 V, 50 A, TO-220 package; no AEC-Q101 qualification, 150°C TJ max | Lacks PPAP documentation and automotive process controls; unsuitable for safety-critical ECUs or production vehicle programs | Acceptable only for non-automotive industrial prototypes or cost-sensitive non-PPAP applications. |
Compared with STL130N10F7 and IXTP50N10P, the DMNH10H028SK3Q-13 uniquely balances DPAK-mountable form factor, AEC-Q101 compliance, and 175°C operation-making it the only option qualified for under-hood engine control and body electronics requiring full automotive change control and thermal resilience.
Availability
DMNH10H028SK3Q-13 is available at Aetrix Electronics and suitable for automotive engine management systems, body control modules, and DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.
Supply support for DMNH10H028SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and test facilities certified to IATF 16949 for automotive-grade products.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body electronics where AEC-Q101 qualification and PPAP readiness are mandatory.
FAQ
Is DMNH10H028SK3Q-13 qualified for automotive safety-critical applications?
Yes-it is AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. While not ASIL-certified itself, it meets the component-level stress testing and process controls required for ASIL-B/C system integration when used per manufacturer guidelines and validated in final application.
What is the recommended PCB layout for thermal performance?
Use a minimum 1-inch² copper pour connected directly to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). Follow Diodes' suggested pad layout (C = 4.572 mm, Y2 = 10.700 mm) and maintain 2 oz copper thickness to achieve RθJA = 40 °C/W for continuous operation at 39 A.
Can DMNH10H028SK3Q-13 be driven directly by a 3.3 V microcontroller?
No-its VGS(TH) range (2.0–4.0 V) and 28 mΩ RDS(ON) spec require VGS ≥ 10 V for full enhancement. A dedicated gate driver (e.g., Diodes AP21xx series) or level-shifting circuit is required to ensure reliable saturation and avoid linear-mode heating.
Does this MOSFET include integrated ESD protection?
No-while the gate oxide is processed for robustness, the device has no on-chip ESD protection diodes. External TVS protection (e.g., Diodes D3V3Z1B) is required on the gate trace per AEC-Q101 recommendations, especially in assembly environments with >2 kV HBM risk.
DMNH10H028SK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2245 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMNH10H028SK3Q-13 FAQ
1.How can I place an order for DMNH10H028SK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH10H028SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH10H028SK3Q-13 reliable?
The price and inventory of DMNH10H028SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMNH10H028SK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH10H028SK3Q-13?
DMNH10H028SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH10H028SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH10H028SK3Q-13?
For technical support, including DMNH10H028SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SK3Q-13 requirements.
6.How does Aetrix verify that DMNH10H028SK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMNH10H028SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMNH10H028SK3Q-13?
All DMNH10H028SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH10H028SK3Q-13 part is unused and in its original packaging.
Return procedure for DMNH10H028SK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMNH10H028SK3Q-13 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

