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Diodes Incorporated DMNH10H028SK3Q-13

Part No.:
DMNH10H028SK3Q-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMNH10H028SK3Q-13.pdf
Description:
MOSFET N-CH 100V 55A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,069

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Product details

Overview

DMNH10H028SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 100V VDSS, 28 mΩ RDS(ON) @ VGS = 10 V, and 55 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and is designed for automotive engine management and DC-DC converters.

For engineers reviewing the DMNH10H028SK3Q-13 datasheet, DMNH10H028SK3Q-13 pinout, DMNH10H028SK3Q-13 application, or DMNH10H028SK3Q-13 equivalent, key selection criteria include its 100% unclamped inductive switching rating, low Qg (36 nC), thermal robustness (RθJC = 1.2 °C/W), and PPAP-capable automotive qualification.

Technical Context

This MOSFET employs a planar trench-gated silicon structure optimized for high-voltage automotive switching. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the low RDS(ON) and 22 nC Qg at VGS = 6 V support efficient operation in synchronous rectification and high-frequency DC-DC topologies.

The device integrates a body diode with tRR = 35 ns and QRR = 47 nC, enabling fast recovery in flyback and buck-boost configurations. Its 1.2 °C/W junction-to-case thermal resistance and IATF 16949-certified manufacturing ensure consistent performance under sustained thermal stress in under-hood environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V automotive systems with transient margin.
RDS(ON) 28 mΩ max @ VGS = 10 V - Enables ≤1.1 W conduction loss at 55 A, reducing heatsink requirements in space-constrained modules.
Qg 36 nC @ VGS = 10 V - Supports <100 kHz switching with minimal driver power, critical for compact DC-DC converter designs.
TJ max +175°C - Allows direct mounting on hot surfaces (e.g., engine control units) without derating below ambient +125°C.
EAS 43 mJ - Sustains single-pulse avalanche energy up to 43 mJ, eliminating need for external snubbers in inductive load switching.
ID cont 55 A @ TC = +25°C - Delivers high current density in TO252 footprint, enabling replacement of larger packages in legacy designs.
VGS(TH) 2.0–4.0 V - Ensures robust turn-on with automotive microcontrollers and gate drivers operating at 3.3 V or 5 V logic levels.

Pinout & Package

Package: TO252 (DPAK), surface-mount, 3-terminal plastic package with exposed drain pad for thermal dissipation. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal Low-side return path; connects to ground or low-side switch node; electrically tied to internal substrate.
Pin 2 (Gate) Control input High-impedance MOSFET gate; requires <100 nA leakage current drive; sensitive to ESD per MIL-STD-202.
Pin 3 (Drain) Power output Exposed copper pad (top view); primary heat transfer path to PCB copper; carries full load current and avalanche energy.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, traceability, and IATF 16949 manufacturing compliance.
100% unclamped inductive switching (UIS) Guaranteed avalanche ruggedness up to 29 A and 43 mJ, enabling reliable operation without external clamping circuits.
Low RDS(ON) × Qg figure-of-merit 28 mΩ × 36 nC = 1008 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 100–500 kHz DC-DC converters.
+175°C maximum junction temperature Enables operation in engine bay locations where ambient exceeds +125°C, reducing need for forced cooling or thermal derating.
Halogen- and antimony-free "Green" construction Meets RoHS 3 (2015/863/EU) with Br+Cl <1500 ppm and Sb <1000 ppm; supports end-of-life recycling and environmental compliance.

Applications

Engine Management Systems Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems with 12 V nominal supply and 60 V transients.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation with precise 1–5 ms pulse width and 100 kHz PWM capability.

Use Value: Low Qg ensures fast turn-on/turn-off timing accuracy; 175°C rating allows placement near combustion chamber without thermal throttling.

Use Scenario: Window lift motor H-bridge half-bridge in door module with reverse battery protection and load dump tolerance.

IC Role / Device Role / Timing Role: N-channel high-side switch in bidirectional motor control, handling 30 A peak stall current and 100 V load dump spikes.

Use Value: 100 V VDSS and 43 mJ EAS eliminate need for external TVS; RDS(ON) <28 mΩ limits I²R heating during extended window-up cycles.

Automotive DC-DC Converters On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Synchronous rectifier in 48 V–12 V buck converter for ADAS domain controllers, operating at 250 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 28 mΩ RDS(ON) cuts forward voltage drop by >80% vs. 0.5 V Schottky, increasing conversion efficiency from 92% to 95.3% at 20 A.

Use Scenario: Primary-side switch in isolated flyback auxiliary supply powering OBC control circuitry from 400 V battery rail.

IC Role / Device Role / Timing Role: 100 V-rated power switch in quasi-resonant topology, handling 100 V reflected transients and 35 ns body diode recovery.

Use Value: 35 ns tRR and low QRR minimize switching loss and EMI during zero-voltage switching transitions at 65 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL130N10F7 100 V, 2.2 mΩ @ 10 V, 130 A, PowerFLAT 5x6 package; lower RDS(ON) but higher Qg (65 nC) Requires larger PCB area and more complex gate drive due to higher capacitance; better for ultra-low-loss 12 V systems, not DPAK-replaceable Select when board space permits larger footprint and thermal design supports higher peak currents.
IXTP50N10P 100 V, 22 mΩ @ 10 V, 50 A, TO-220 package; no AEC-Q101 qualification, 150°C TJ max Lacks PPAP documentation and automotive process controls; unsuitable for safety-critical ECUs or production vehicle programs Acceptable only for non-automotive industrial prototypes or cost-sensitive non-PPAP applications.

Compared with STL130N10F7 and IXTP50N10P, the DMNH10H028SK3Q-13 uniquely balances DPAK-mountable form factor, AEC-Q101 compliance, and 175°C operation-making it the only option qualified for under-hood engine control and body electronics requiring full automotive change control and thermal resilience.

Availability

DMNH10H028SK3Q-13 is available at Aetrix Electronics and suitable for automotive engine management systems, body control modules, and DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for DMNH10H028SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design, manufacturing, and test facilities certified to IATF 16949 for automotive-grade products.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body electronics where AEC-Q101 qualification and PPAP readiness are mandatory.

FAQ

Is DMNH10H028SK3Q-13 qualified for automotive safety-critical applications?

Yes-it is AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. While not ASIL-certified itself, it meets the component-level stress testing and process controls required for ASIL-B/C system integration when used per manufacturer guidelines and validated in final application.

What is the recommended PCB layout for thermal performance?

Use a minimum 1-inch² copper pour connected directly to the exposed drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated). Follow Diodes' suggested pad layout (C = 4.572 mm, Y2 = 10.700 mm) and maintain 2 oz copper thickness to achieve RθJA = 40 °C/W for continuous operation at 39 A.

Can DMNH10H028SK3Q-13 be driven directly by a 3.3 V microcontroller?

No-its VGS(TH) range (2.0–4.0 V) and 28 mΩ RDS(ON) spec require VGS ≥ 10 V for full enhancement. A dedicated gate driver (e.g., Diodes AP21xx series) or level-shifting circuit is required to ensure reliable saturation and avoid linear-mode heating.

Does this MOSFET include integrated ESD protection?

No-while the gate oxide is processed for robustness, the device has no on-chip ESD protection diodes. External TVS protection (e.g., Diodes D3V3Z1B) is required on the gate trace per AEC-Q101 recommendations, especially in assembly environments with >2 kV HBM risk.

DMNH10H028SK3Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2245 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMNH10H028SK3Q-13 FAQ

1.How can I place an order for DMNH10H028SK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH10H028SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH10H028SK3Q-13 reliable?

The price and inventory of DMNH10H028SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMNH10H028SK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH10H028SK3Q-13?

DMNH10H028SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH10H028SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH10H028SK3Q-13?

For technical support, including DMNH10H028SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SK3Q-13 requirements.

6.How does Aetrix verify that DMNH10H028SK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMNH10H028SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMNH10H028SK3Q-13?

All DMNH10H028SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH10H028SK3Q-13 part is unused and in its original packaging.

Return procedure for DMNH10H028SK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH10H028SK3Q-13 Tags

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