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Diodes Incorporated DMNH10H028SPS-13
- Part No.:
- DMNH10H028SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMNH10H028SPS-13.pdf
- Description:
- MOSFET N-CH 100V 40A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,200
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Product details
Overview
DMNH10H028SPS from Diodes Incorporated is a 100V, 40A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, featuring 28 mΩ RDS(ON) @ VGS = 10V, 175°C maximum junction temperature, and 100% unclamped inductive switching rating-designed for high-efficiency DC-DC converters in automotive and industrial power management.
For engineers reviewing the DMNH10H028SPS datasheet, DMNH10H028SPS pinout, DMNH10H028SPS application, or DMNH10H028SPS equivalent, key selection criteria include RDS(ON) stability over temperature, thermal resistance (RθJC = 1.8°C/W), gate charge (Qg = 36 nC @ 10V), and SOA compliance under pulsed load conditions.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck and half-bridge topologies. Its 1.8°C/W junction-to-case thermal resistance enables direct mounting to heatsinks or copper planes without thermal vias in compact layouts.
The device integrates a robust body diode with 35 ns reverse-recovery time and 47 nC QRR, supporting high-frequency operation up to 1 MHz while maintaining low switching losses. Its ±20V gate-source voltage rating and 2.0–4.0V threshold ensure stable drive compatibility with standard 3.3V/5V/10V controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48V input bus systems with 2× safety margin against transients |
| RDS(ON) | 28 mΩ @ VGS = 10V - delivers ≤11.2 W conduction loss at 20A continuous drain current |
| ID (TC = 25°C) | 40 A - enables high-current single-phase power stages without paralleling |
| Qg | 36 nC @ VGS = 10V - determines gate driver power requirement and switching speed trade-off |
| RθJC | 1.8°C/W - allows >1.6 W dissipation with <3°C junction-to-case rise at rated current |
| TJ max | +175°C - qualified for under-hood automotive and industrial ambient environments |
| EAS | 35 mJ - withstands energy from inductive kickback in motor control or solenoid drivers |
Pinout & Package
PowerDI5060-8 is a thermally enhanced, surface-mount, 8-terminal package with dual-source/dual-drain configuration and exposed thermal pad. Its 1.1 mm profile supports ultra-thin power modules and space-constrained PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Drain (D) | Parallel-connected internal drain terminals - reduce current density and improve thermal spreading |
| 7, 8 | Source (S) | Dual-source terminals - lower source inductance and improve gate-drive loop integrity |
| Center Pad | Source (S) | Exposed thermal pad tied to source - provides primary heat path to PCB copper plane |
| Terminal G | Gate (G) | Single gate terminal - compatible with standard gate drivers; low 1.9 Ω gate resistance minimizes ringing |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Rated for 26 A avalanche current and 35 mJ energy - eliminates need for external snubbers in flyback or boost converters |
| Thermally Efficient Package | RθJC = 1.8°C/W - enables >2× power dissipation vs. SO-8 MOSFETs of similar RDS(ON) |
| Low Input Capacitance | Ciss = 2245 pF - reduces gate drive power and improves efficiency in high-frequency (>500 kHz) designs |
| Automotive-Qualified Variant | DMNH10H028SPSQ available - AEC-Q101 qualified for engine control, ADAS, and battery management |
| Green Construction | Halogen- and antimony-free, RoHS 3 compliant - meets EU environmental mandates without performance compromise |
Applications
| Automotive DC-DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck-boost stage operating at 250 kHz. Use Value: 28 mΩ RDS(ON) and 175°C rating enable >96% peak efficiency and reliable operation near engine bay hot zones. | Use Scenario: Half-bridge gate driver output stage for 3-phase BLDC motor control in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switch handling 30A peak phase current with 100 ns dead-time control. Use Value: Fast 4.8 ns fall time and low 68 pF Crss minimize shoot-through risk and EMI during commutation. |
| Server VRMs | Renewable Energy Inverters |
Use Scenario: Multiphase buck converter supplying core voltage to AI accelerators in data center servers. IC Role / Device Role / Timing Role: Synchronous FET in 1 MHz, 40A per phase power stage with digital PWM controller. Use Value: 36 nC Qg and 1.8°C/W RθJC allow tight thermal management on dense server PCBs without heatsinks. | Use Scenario: MPPT boost stage in residential solar microinverters operating at 60°C ambient. IC Role / Device Role / Timing Role: Main switching element in 100 kHz, 15A DC-DC interface between PV panel and inverter DC bus. Use Value: Stable RDS(ON) over -40°C to +125°C ensures consistent efficiency across seasonal temperature swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP110N10T | RDS(ON) = 11 mΩ @ 10V, TO-220 package, RθJC = 1.0°C/W, but no AEC-Q101 variant | Higher power density but requires heatsink; unsuitable for space-constrained automotive modules | Choose when thermal budget allows discrete heatsinking and lowest possible conduction loss is critical |
| STL220N6F7 | RDS(ON) = 2.2 mΩ @ 10V, PowerFLAT 5x6 package, RθJC = 1.5°C/W, 60V rating only | Lower voltage rating limits use to ≤48V systems; superior RDS(ON) but narrower safe operating area | Prefer for 12V/24V industrial SMPS where 60V breakdown suffices and ultra-low loss is prioritized |
Compared with IXTP110N10T and STL220N6F7, DMNH10H028SPS offers balanced 100V capability, industry-leading thermal performance in a low-profile package, and automotive qualification-making it optimal for compact, high-reliability 48V+ power conversion where board space and ambient temperature are constrained.
Availability
DMNH10H028SPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMNH10H028SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for thermally demanding, high-efficiency switching applications where low RDS(ON), robust UIS, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMNH10H028SPS supports 25 A continuous drain current at TC = +100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under typical PCB mounting conditions with 2 oz copper and minimum recommended pad layout.
Does this MOSFET require a negative gate turn-off voltage to prevent shoot-through?
No. The device has a gate threshold voltage range of 2.0–4.0 V and is fully compatible with 0 V to 10 V gate drive. Its low 1.9 Ω gate resistance and 68 pF Crss suppress Miller-induced turn-on, eliminating the need for negative gate bias in properly designed half-bridge layouts.
Can DMNH10H028SPS be used in synchronous rectification without an external Schottky diode?
Yes. Its integrated body diode exhibits 0.7–1.2 V forward voltage at 1 A and 35 ns reverse recovery time, enabling efficient synchronous rectification in buck and flyback topologies up to 500 kHz without external diode supplementation.
Is the PowerDI5060-8 package lead-free and RoHS-compliant?
Yes. The DMNH10H028SPS features matte tin annealed terminals over copper leadframe and complies with EU RoHS 2015/863/EU (RoHS 3), including exemption allowances. It is also halogen- and antimony-free per Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb).
DMNH10H028SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2245 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMNH10H028SPS-13 FAQ
1.How can I place an order for DMNH10H028SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH10H028SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH10H028SPS-13 reliable?
The price and inventory of DMNH10H028SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SPS-13 is usually 5 days.
3.What payment methods are accepted for DMNH10H028SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH10H028SPS-13?
DMNH10H028SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH10H028SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH10H028SPS-13?
For technical support, including DMNH10H028SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SPS-13 requirements.
6.How does Aetrix verify that DMNH10H028SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMNH10H028SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SPS-13 meets industry standards.
7.What is the process for return or replacement of DMNH10H028SPS-13?
All DMNH10H028SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH10H028SPS-13 part is unused and in its original packaging.
Return procedure for DMNH10H028SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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