Diodes Incorporated DMNH10H028SPSQ-13

Overview

DMNH10H028SPSQ from Diodes Incorporated is a 100V, 40A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for continuous operation at +175°C. It delivers 28 mΩ R_DS(ON) @ V_GS = 10V, supports 100% unclamped inductive switching, and is designed for automotive engine management and DC-DC converters.

For engineers reviewing the DMNH10H028SPSQ datasheet, DMNH10H028SPSQ pinout, DMNH10H028SPSQ application, or DMNH10H028SPSQ equivalent, key selection criteria include its 1.8°C/W R_θJC, 2245 pF C_iss, 36 nC total gate charge, thermal stability up to +175°C, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its 100V BVDSS rating and 26A I_AS avalanche capability enable robust operation in inductive load switching, while the 1.8°C/W junction-to-case thermal resistance supports high-power density PCB layouts with minimal heatsinking.

The device integrates an intrinsic body diode with 35 ns reverse recovery time and 47 nC Q_RR, enabling efficient synchronous rectification in isolated DC-DC topologies. Gate threshold voltage (2.0–4.0V) and 1.9Ω gate resistance ensure stable drive compatibility with standard 3.3V/5V/12V controllers without external gate drivers in many cases.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed copper drain pad, 1.1mm max profile, and 0.097g mass. UL 94V-0 molded plastic housing with matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6LF8AG and IXTQ1N100P, DMNH10H028SPSQ uniquely balances 100V robustness, 28mΩ conduction loss, AEC-Q101 compliance, and thermally efficient surface-mount packaging-making it optimal for next-generation 48V automotive power stages requiring both reliability and power density.

Availability

DMNH10H028SPSQ is available at Aetrix Electronics and suitable for engine control units, body electronics modules, and 48V DC-DC converters requiring stable component supply across extended automotive product lifecycles.

Supply support for DMNH10H028SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, serving automotive, industrial, computing, and consumer markets with a focus on high-reliability, AEC-Q qualified components.

This device belongs to Diodes' PowerMOS™ automotive-qualified portfolio, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and electrification subsystems.

FAQ

What is the maximum allowable PCB copper area for thermal performance per the datasheet?

The datasheet specifies two test conditions: 2 oz copper with minimum recommended pad layout yields RθJA = 97°C/W, while a 1-inch square copper plate achieves RθJA = 52°C/W. For production designs targeting ≤100°C junction rise at 40A, use ≥1 inch² of 2 oz copper connected directly to the exposed drain pad via multiple thermal vias.

Does DMNH10H028SPSQ support gate drive from 3.3V microcontrollers?

No-its VGS(TH) range is 2.0–4.0V, and RDS(ON) is only guaranteed at VGS = 10V. At 3.3V, RDS(ON) exceeds 100mΩ, causing excessive conduction loss. A level-shifted 10V gate drive or dedicated gate driver IC is required for full performance.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the body diode is characterized with IS = 3.9A continuous forward current and tRR = 35ns at IF = 20A. Its QRR = 47nC and soft recovery behavior make it viable for synchronous rectification in 200kHz DC-DC converters when paired with appropriate gate timing control.

How does the PowerDI5060-8 package compare thermally to DPAK or SO-8?

PowerDI5060-8 offers RθJC = 1.8°C/W-comparable to DPAK (1.5–2.0°C/W) and significantly better than SO-8 (5–7°C/W). Its exposed drain pad provides direct thermal path to PCB, whereas SO-8 relies on leadframe conduction. This makes PowerDI5060-8 superior for high-current automotive applications where board-level heatsinking is critical.