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Diodes Incorporated DMNH10H028SPSWQ-13
- Part No.:
- DMNH10H028SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMNH10H028SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:3,623
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Product details
Overview
DMNH10H028SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 28 mΩ RDS(ON) at VGS = 10 V and 40 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and features wettable flanks for automated optical inspection-designed specifically for automotive engine management and body control modules.
For engineers reviewing the DMNH10H028SPSWQ-13 datasheet, DMNH10H028SPSWQ-13 pinout, DMNH10H028SPSWQ-13 application, or DMNH10H028SPSWQ-13 equivalent, key selection criteria include its 100V BVDSS rating, low 28 mΩ on-resistance, thermally robust PowerDI5060-8 package with 1.8°C/W RθJC, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for high-voltage automotive switching, supporting fast turn-on (6.4 ns tD(ON)) and turn-off (17.8 ns tD(OFF)) with low gate charge (36 nC total Qg at VGS = 10 V). Its 2245 pF Ciss and 68 pF Crss enable stable high-frequency operation in DC-DC converters.
The device integrates a body diode with 35 ns reverse-recovery time and 47 nC QRR, enabling synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design is supported by a 1.8°C/W junction-to-case resistance and validated SOA curves up to 175°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands up to 100 V drain-source voltage before avalanche conduction, suitable for 48 V automotive bus and 12 V/24 V system transients. |
| RDS(ON) | 28 mΩ @ VGS = 10 V - Minimizes conduction loss in high-current paths; delivers <0.5 W I²R loss at 40 A ID. |
| ID (TC = +25°C) | 40 A - Continuous drain current rating at case temperature 25°C, validated with minimum FR-4 pad layout per datasheet. |
| TJ Operating Range | –55°C to +175°C - Enables deployment in under-hood environments including engine control units and transmission control modules. |
| Qg (VGS = 10 V) | 36 nC - Low gate charge reduces driver power requirement and enables efficient 100–500 kHz switching in DC-DC applications. |
| Thermal RθJC | 1.8°C/W - Enables direct thermal coupling to heatsink or copper plane, critical for sustained 25 A operation at elevated ambient temperatures. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced, wettable flank, 1.0 mm max profile, RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S) | Source | Main current return path; electrically tied to three internal source terminals for low-inductance, high-current routing. |
| Pins 2, 3, 4, 5, 6, 7 (D) | Drain | High-current power input node; six parallel drain terminals reduce RDS(ON) and improve thermal spreading into PCB copper. |
| Pin 8 (G) | Gate | Control terminal requiring ≤±20 V drive; low 1.9 Ω gate resistance supports fast edge rates without external damping. |
Key Features
| Feature | Design Value |
|---|---|
| Wettable Flank Terminals | Enables 100% automated optical inspection (AOI) of solder joints on bottom-side SMT assembly-critical for automotive PPAP compliance. |
| AEC-Q101 Qualification | Validated for automotive-grade reliability including HTGB, HTRB, UHAST, and temperature cycling per JESD22-A108, with full PPAP documentation support. |
| Low Profile (≤1.1 mm) | Allows integration into space-constrained modules such as ECU power stages and compact DC-DC converters where height is limited. |
| Green Packaging | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb), meeting automotive environmental compliance requirements. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC, handling pulsed 10–40 A loads at 100 V bus. Use Value: 28 mΩ RDS(ON) limits power dissipation to <0.5 W during 40 A pulses, while 175°C TJ rating ensures operation near hot engine blocks. |
Use Scenario: Load switching for headlights, HVAC fans, and window lift motors in centralized BCMs. IC Role / Device Role / Timing Role: Low-side power switch driven directly by microcontroller GPIO or dedicated driver, managing resistive/inductive loads. Use Value: Fast 6.4 ns turn-on delay and 5.8 ns rise time enable precise PWM dimming and soft-start control, reducing EMI in cabin electronics. |
| 48 V Automotive DC-DC Converter | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Synchronous rectifier in 48 V–12 V buck converter powering ADAS sensors and infotainment systems. IC Role / Device Role / Timing Role: Secondary-side synchronous FET operating at 200–300 kHz, replacing Schottky diodes to improve efficiency. Use Value: 35 ns reverse-recovery time and low 173 pF Coss minimize switching losses and ringing, increasing conversion efficiency by ≥2.5% vs. diode solution. |
Use Scenario: Primary-side high-side switch in auxiliary 12 V supply derived from OBC's HV DC link. IC Role / Device Role / Timing Role: Hard-switched MOSFET in flyback or forward topology, operating at ≤100 kHz with 100 V blocking capability. Use Value: 100 V BVDSS withstands transient spikes up to 120 V in 400 V+ OBC systems, while 1.8°C/W RθJC allows passive cooling on small PCB areas. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 2.2 mΩ RDS(ON) @ 10 V, but in PowerFLAT 5x6 package with higher thermal resistance (RθJC = 2.5°C/W). | Higher current density but less robust thermal performance in constrained layouts; requires larger copper area for same power dissipation. | Select when ultra-low RDS(ON) dominates over thermal footprint; verify SOA at 175°C with board-level thermal simulation. |
| IXTP110N10T | 100 V, 11 mΩ RDS(ON) @ 10 V, TO-220 package with RθJC = 0.8°C/W but no AEC-Q101 qualification or wettable flanks. | Not automotive-qualified; unsuitable for PPAP-managed production; requires manual soldering or through-hole reflow. | Acceptable only for non-automotive industrial prototypes; not recommended for OEM production or safety-critical functions. |
Compared with STL220N10F7 and IXTP110N10T, DMNH10H028SPSWQ-13 uniquely balances AEC-Q101 compliance, wettable flank AOI readiness, and 1.8°C/W thermal resistance in a low-profile SMT package-making it optimal for volume automotive production where traceability, reliability, and manufacturability are jointly prioritized.
Availability
DMNH10H028SPSWQ-13 is available at Aetrix Electronics and suitable for engine control units, body control modules, and 48 V DC-DC converters requiring stable component supply across automotive Tier-1 production programs.
Supply support for DMNH10H028SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power switching applications demanding extended temperature operation, PPAP support, and zero-defect manufacturing.
FAQ
Is DMNH10H028SPSWQ-13 qualified for automotive applications?
Yes. It is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. Its –55°C to +175°C operating range, wettable flank terminals, and green packaging meet automotive OEM requirements for engine bay and chassis-mounted electronics.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies 25 A continuous drain current at TC = +100°C. This derating reflects thermal limitations of the PowerDI5060-8 package under real-world PCB thermal conditions, and must be used with appropriate copper area and airflow assumptions per Figure 5 and Figure 7.
Does this MOSFET include an integrated body diode, and what are its characteristics?
Yes. It features a built-in body diode rated for 3.9 A continuous forward current and 26 A avalanche current (L = 0.1 mH). Reverse recovery time is 35 ns with 47 nC QRR at IF = 20 A and di/dt = 100 A/µs-enabling use in synchronous rectification and freewheeling applications.
Can DMNH10H028SPSWQ-13 be used in hard-switched topologies above 200 kHz?
Yes-its 36 nC total gate charge, 68 pF Crss, and 6.4 ns turn-on delay support reliable operation up to 300 kHz in buck and half-bridge configurations. However, layout parasitics and gate driver strength must be optimized to maintain clean switching edges and avoid shoot-through.
DMNH10H028SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2245 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMNH10H028SPSWQ-13 FAQ
1.How can I place an order for DMNH10H028SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH10H028SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH10H028SPSWQ-13 reliable?
The price and inventory of DMNH10H028SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH10H028SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMNH10H028SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH10H028SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH10H028SPSWQ-13?
DMNH10H028SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH10H028SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH10H028SPSWQ-13?
For technical support, including DMNH10H028SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH10H028SPSWQ-13 requirements.
6.How does Aetrix verify that DMNH10H028SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMNH10H028SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH10H028SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMNH10H028SPSWQ-13?
All DMNH10H028SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH10H028SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH10H028SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMNH10H028SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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