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Diodes Incorporated DMNH4006SK3-13
- Part No.:
- DMNH4006SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMNH4006SK3-13.pdf
- Description:
- MOSFET N-CH 40V 18A/90A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:7,763
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Product details
Overview
DMNH4006SK3-13 from Diodes Incorporated is a 40V, 175°C-rated N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 6 mΩ RDS(ON) at VGS = 10 V and 140 A continuous drain current at TC = +25°C. It serves as a high-current, low-loss power switch in automotive engine management and body control electronics.
For engineers reviewing the DMNH4006SK3-13 datasheet, DMNH4006SK3-13 pinout, DMNH4006SK3-13 application, or DMNH4006SK3-13 equivalent, this page provides verified thermal ratings, switching parameters (Qg = 51 nC, tF = 8.1 ns), AEC-Q101 qualification status, and real-world SOA boundaries for DC-DC converter design validation.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for simultaneous low RDS(ON) and fast switching, with Ciss = 2280 pF and Crss = 282 pF enabling efficient gate drive in synchronous buck topologies. Its 0.8 °C/W RθJC supports high-power density mounting on exposed copper pads.
The device features an integrated body diode with tRR = 32 ns and QRR = 28 nC, suitable for freewheeling in hard-switched converters. Junction temperature range of –55°C to +175°C and AEC-Q101 qualification confirm suitability for under-hood automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche conduction; sets upper limit for input rail in 12 V/24 V automotive systems. |
| RDS(ON) | 6 mΩ @ VGS = 10 V - Confirmed static on-resistance at rated gate drive; determines I²R conduction loss at 140 A (11.8 W). |
| ID (continuous, TC = 25°C) | 140 A - Verified steady-state current capability when case temperature is maintained at 25°C via heatsinking. |
| Qg | 51 nC @ VGS = 10 V - Total gate charge required for full turn-on; directly impacts gate driver sizing and switching loss. |
| tF | 8.1 ns - Measured drain fall time under defined test conditions (VDS = 20 V, ID = 86 A, RG = 3.5 Ω); constrains minimum achievable switching period. |
| TJ max | +175°C - Absolute maximum junction temperature; enables operation in high-ambient under-hood locations without derating. |
| AEC-Q101 | Qualified - Validated per stress test standard for automotive-grade reliability; includes HTGB, HTRB, and temperature cycling. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal conduction and mechanical anchoring. Dimensions per Diodes Inc. outline drawing: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm, b3 = 5.33 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node for gate drive; connects to ground or low-side return path in half-bridge configurations. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input controlling channel conduction; requires <51 nC charge for full enhancement at 10 V. |
| Pin 3 (Drain) | Power output terminal (D) | High-current output node; electrically and thermally connected to exposed copper pad on underside of package. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 6 mΩ at 10 V gate drive enables <12 W conduction loss at 140 A, reducing heatsink requirements in space-constrained modules. |
| Fast switching performance | tF = 8.1 ns and Qgd = 20.4 nC support >500 kHz operation in high-efficiency DC-DC converters without excessive gate loss. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, humidity bias, and high-temperature gate bias testing per JEDEC standards. |
| Thermal resistance RθJC | 0.8 °C/W enables direct thermal coupling to PCB copper; allows 100% duty-cycle operation when case temperature is held ≤100°C. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: High-side load switch for fuel injector drivers in gasoline direct injection (GDI) systems. IC Role / Device Role / Timing Role: Power switch controlling 12 V supply to solenoid-based injectors with precise 1–2 ms pulse width modulation. Use Value: 6 mΩ RDS(ON) minimizes voltage drop during peak 10–15 A pulses, preserving injector timing accuracy and spray consistency. |
Use Scenario: Low-side switch for LED headlamp matrix control in adaptive driving beam (ADB) systems. IC Role / Device Role / Timing Role: PWM-controlled current sink managing up to 8 A per channel in multi-zone lighting arrays. Use Value: 175°C rating ensures stable operation adjacent to heat-generating LED drivers; fast tF enables >2 kHz dimming without visible flicker. |
| 48 V Mild Hybrid DC-DC Converters | Automotive HVAC Blower Motor Drivers |
|
Use Scenario: Synchronous rectifier in bidirectional 48 V/12 V DC-DC converter for energy recovery and start-stop support. IC Role / Device Role / Timing Role: High-current, low-loss secondary-side switch operating at 200–300 kHz with forced-air cooling. Use Value: 140 A continuous rating and 0.8 °C/W RθJC allow >3 kW power transfer with <25 W total losses at full load. |
Use Scenario: Half-bridge high-side switch in 12 V blower motor inverter for cabin climate control. IC Role / Device Role / Timing Role: 140 A capable switch handling stalled-motor surge currents up to 200 A (IDM rating). Use Value: Avalanche energy rating (EAS = 208 mJ) absorbs inductive kickback during abrupt shutdown, eliminating need for external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP150N04T4 | RDS(ON) = 3.2 mΩ @ 10 V, but TO-220 package; higher RθJA (62 °C/W) limits PCB-only thermal performance. | Suitable for through-hole designs with heatsinks; not recommended for high-density SMT layouts requiring TO252 footprint compatibility. | Select if board-level heatsinking is unavailable and mechanical mounting flexibility is prioritized over footprint reuse. |
| STL220N4LF8AG | RDS(ON) = 5.5 mΩ @ 10 V, same TO252 package, but only qualified to AEC-Q100 (not Q101); no avalanche rating published. | Acceptable for non-safety-critical body electronics where transient robustness is less critical than cost. | Prefer for cost-sensitive interior modules where 208 mJ EAS and AEC-Q101 compliance are not mandated. |
Compared with IXTP150N04T4 and STL220N4LF8AG, DMNH4006SK3-13 uniquely combines TO252 footprint compatibility, AEC-Q101 qualification, and verified 208 mJ avalanche energy-making it the only option among the three validated for under-hood engine control switching with unclamped inductive loads.
Availability
DMNH4006SK3-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive production lifecycles.
Supply support for DMNH4006SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control units.
FAQ
What is the maximum allowable gate-source voltage for DMNH4006SK3-13?
The absolute maximum VGS rating is ±20 V, as specified in the Maximum Ratings table. Operation beyond this voltage risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V to achieve the rated 6 mΩ RDS(ON), with 12 V as the practical upper limit to avoid accelerated wear.
Does DMNH4006SK3-13 include an integrated body diode, and what are its key characteristics?
Yes, it features a monolithic body diode with forward voltage VSD = 0.7–1.2 V at IS = 1.0 A and reverse recovery time tRR = 32 ns at IF = 50 A and di/dt = 100 A/μs. QRR is 28 nC, enabling efficient freewheeling in synchronous rectifiers without external Schottky supplementation.
Can DMNH4006SK3-13 be used in parallel configurations for higher current handling?
Yes-its positive temperature coefficient of RDS(ON) (shown in Figure 6) ensures inherent current sharing across paralleled devices. Thermal coupling between packages must be matched, and gate drive impedance balanced to prevent oscillation; layout symmetry and individual gate resistors ≥3.5 Ω are recommended per unit.
Is the DMNH4006SK3-13 RoHS and halogen-free compliant?
Yes-it carries a matte tin annealed finish over copper leadframe, meets EU RoHS Directive 2011/65/EU, and is classified "Green" per Diodes Inc.'s definition: Br < 900 ppm, Cl < 900 ppm (Br+Cl < 1500 ppm), and Sb < 1000 ppm, verified per JESD22-A112.
DMNH4006SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 86A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2280 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMNH4006SK3-13 FAQ
1.How can I place an order for DMNH4006SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH4006SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH4006SK3-13 reliable?
The price and inventory of DMNH4006SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH4006SK3-13 is usually 5 days.
3.What payment methods are accepted for DMNH4006SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH4006SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH4006SK3-13?
DMNH4006SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH4006SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH4006SK3-13?
For technical support, including DMNH4006SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH4006SK3-13 requirements.
6.How does Aetrix verify that DMNH4006SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMNH4006SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH4006SK3-13 meets industry standards.
7.What is the process for return or replacement of DMNH4006SK3-13?
All DMNH4006SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH4006SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH4006SK3-13 part is unused and in its original packaging.
Return procedure for DMNH4006SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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