Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMNH4006SPS-13

Part No.:
DMNH4006SPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixDMNH4006SPS-13.pdf
Description:
MOSFET BVDSS: 31V-40V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,781

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMNH4006SPS-13 from Diodes Incorporated is a 40V N-channel TrenchMOS™ power MOSFET in PowerDI5060-8 package, rated for 110A continuous drain current at TC = +25°C, with RDS(ON) = 4.5 mΩ (typ) at VGS = 10V and qualified to AEC-Q101 for automotive under-hood applications including engine control units and DC-DC converters.

For engineers reviewing the DMNH4006SPS-13 datasheet, DMNH4006SPS-13 pinout, DMNH4006SPS-13 application, or DMNH4006SPS-13 equivalent, key selection criteria include its 175°C junction rating, 100% unclamped inductive switching capability, low Qg (50.9 nC), <1.1 mm profile, and PPAP-supporting IATF 16949 manufacturing.

Technical Context

This MOSFET employs Diodes' proprietary TrenchMOS™ process to achieve low RDS(ON) and fast switching with Qgd/Qgs ratio of 2.13 - optimized for hard-switched DC-DC topologies. Its body diode exhibits tRR = 31.6 ns and QRR = 27.6 nC at 100 A/μs, enabling efficient synchronous rectification in high-frequency converters.

The device features thermally enhanced PowerDI5060-8 packaging with RθJC = 1.1°C/W and supports operation across -55°C to +175°C ambient, validated per AEC-Q101 stress tests including HTGB, HTRB, and UIS - critical for engine bay and battery management systems.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage compatible with 24V automotive systems and 48V mild-hybrid architectures.
RDS(ON) 4.5 mΩ (typ) @ VGS = 10V - Enables ≤5W conduction loss at 100A, reducing heatsink requirements in compact modules.
ID (TC = +25°C) 110 A - Supports high-current motor drivers and starter-generator inverters without parallel devices.
Qg 50.9 nC - Low gate charge allows fast turn-on with minimal driver power, supporting >500 kHz switching in LLC resonant converters.
tRR 31.6 ns - Fast body diode recovery minimizes shoot-through risk and reduces snubber losses in half-bridge configurations.
TJ max +175°C - Rated for sustained operation in under-hood environments exceeding 125°C ambient temperature.
EAS 208 mJ - Robust avalanche energy rating ensures reliability during load dump transients in automotive power nets.

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-terminal leadframe package with 1.0 mm nominal height, UL 94V-0 molding compound, and matte tin annealed terminals.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6 Drain (D) Internally paralleled high-current drain connections - optimized for low-inductance PCB layout and thermal spreading to copper pour.
7 Gate (G) Single gate input terminal - designed for standard 10V logic-level drive; low Rg (1.7 Ω) enables clean edge control.
8, 9, 10 Source (S) Three-source terminals reduce source inductance and improve current sharing in high-di/dt applications like motor phase legs.

Key Features

Feature Design Value
AEC-Q101 qualified + PPAP capable Fully documented qualification per automotive stress test standards, with change control and IATF 16949 production traceability.
100% UIS tested Each unit validated for unclamped inductive switching up to 64A/208mJ - eliminates need for external snubbers in flyback or buck-boost designs.
Low-profile 1.1 mm height Enables integration into space-constrained modules such as ECU power stages and ADAS domain controllers where Z-height is limited.
Green, halogen/antimony-free Meets RoHS 3 (2015/863/EU) and automotive ELV Directive with Br+Cl <1500 ppm and Sb <1000 ppm - compliant for global vehicle programs.
Thermal RθJC = 1.1°C/W Direct die-to-case path via exposed copper paddle - supports >3W steady-state dissipation when mounted on 1-inch² 2oz copper thermal pad.

Applications

Engine Control Unit (ECU) Power Stage Automotive Body Control Module (BCM)

Use Scenario: High-side switching for fuel injector drivers and ignition coil control in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch handling repetitive 10–100A pulsed loads with 10μs–1ms on-times and strict thermal cycling requirements.

Use Value: 175°C rating and 100% UIS testing ensure survival during cold-crank transients and repeated hot-soak cycles without derating.

Use Scenario: Load switching for HVAC blower motors, seat heaters, and lighting clusters in centralized body electronics.

IC Role / Device Role / Timing Role: Low-RDS(ON) N-channel MOSFET used in high-side configuration with integrated charge pump or in low-side position with ground-referenced PWM.

Use Value: 4.5 mΩ RDS(ON) cuts conduction loss by >30% vs. legacy 8 mΩ parts, extending battery runtime in always-on BCM sleep modes.

48V Mild-Hybrid DC-DC Converter Electric Power Steering (EPS) Motor Driver

Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V buck-boost converters for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: High-frequency (300–600 kHz), high-current switch with fast body diode recovery to minimize reverse recovery losses.

Use Value: 31.6 ns tRR and 27.6 nC QRR reduce switching loss by ~22% compared to standard trench MOSFETs in same package.

Use Scenario: Half-bridge leg in three-phase inverter driving 300–500W EPS assist motors with peak currents ≥80A.

IC Role / Device Role / Timing Role: Low-inductance, multi-source/drain terminal MOSFET enabling clean gate drive and minimized parasitic oscillation at 20 kHz PWM.

Use Value: Three-source terminals cut source loop inductance by ~40%, suppressing voltage spikes during 5 kA/μs di/dt events in motor phase commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG RDS(ON) = 3.7 mΩ @ 10V but rated only to +150°C; no AEC-Q101 documentation provided in public datasheet. Lacks PPAP support and full automotive qualification evidence - suitable for industrial but not safety-critical automotive use. Select only if thermal margin permits operation below 150°C and PPAP is not required.
IXTQ120N10P Higher VDSS = 100V, larger TO-263 package, RDS(ON) = 7.2 mΩ - significantly higher conduction loss and footprint. Designed for industrial UPS and solar inverters; lacks automotive qualification and thin-profile packaging. Choose only when 100V blocking is mandatory and board space/height constraints are relaxed.

Compared with STL220N4F7AG and IXTQ120N10P, DMNH4006SPS-13 uniquely delivers AEC-Q101 compliance, 175°C operation, and sub-1.1 mm height in a thermally optimized 8-terminal package - making it the only option meeting full OEM requirements for next-gen 48V and engine bay power stages.

Availability

DMNH4006SPS-13 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and 48V mild-hybrid DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for DMNH4006SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-current switching in engine management, chassis, and electrification systems where thermal robustness and transient immunity are non-negotiable.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH4006SPS-13 supports 80A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limits and ensures safe operation within the SOA curve at elevated temperatures typical in under-hood environments.

Is the PowerDI5060-8 package lead-free and RoHS 3 compliant?

Yes - the device uses matte tin annealed terminals over copper leadframe and meets EU Directive 2015/863/EU (RoHS 3), with bromine and chlorine each <900 ppm and antimony <1000 ppm, verified per Diodes' Green Product Definition.

Does this MOSFET require a gate resistor for automotive PWM applications?

A gate resistor is recommended to dampen ringing caused by PCB trace inductance and internal Lg/Ls - typical values range from 2.2 Ω to 10 Ω depending on switching frequency and driver strength. The device's Rg = 1.7 Ω (typ) provides baseline control but does not eliminate need for external optimization.

Can DMNH4006SPS-13 be used in synchronous rectification mode?

Yes - its fast body diode (tRR = 31.6 ns, QRR = 27.6 nC) and low RDS(ON) make it suitable for synchronous rectification in isolated DC-DC converters up to 600 kHz, provided gate timing avoids shoot-through and accounts for VGS(th) variation across temperature.

DMNH4006SPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
50.9 nC @ 10 V
Vgs (Max):
20V
Input Capacitance (Ciss) (Max) @ Vds:
2280 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-

DMNH4006SPS-13 FAQ

1.How can I place an order for DMNH4006SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH4006SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH4006SPS-13 reliable?

The price and inventory of DMNH4006SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH4006SPS-13 is usually 5 days.

3.What payment methods are accepted for DMNH4006SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH4006SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH4006SPS-13?

DMNH4006SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH4006SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH4006SPS-13?

For technical support, including DMNH4006SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH4006SPS-13 requirements.

6.How does Aetrix verify that DMNH4006SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMNH4006SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH4006SPS-13 meets industry standards.

7.What is the process for return or replacement of DMNH4006SPS-13?

All DMNH4006SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH4006SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH4006SPS-13 part is unused and in its original packaging.

Return procedure for DMNH4006SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH4006SPS-13 Tags

  • DMNH4006SPS-13
  • DMNH4006SPS-13 PDF
  • DMNH4006SPS-13 Datasheet
  • DMNH4006SPS-13 Specifications
  • DMNH4006SPS-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMNH4006SPS-13
  • Buy DMNH4006SPS-13
  • DMNH4006SPS-13 Price
  • DMNH4006SPS-13 Distributor
  • DMNH4006SPS-13 Supplier
  • DMNH4006SPS-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER