Diodes Incorporated DMNH6008SPS-13

Overview

DMNH6008SPS from Diodes Incorporated is a 60V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8 package, delivering 8.0 mΩ R_DS(ON) at V_GS = 10 V and 16.5 A continuous drain current at T_A = +25°C. It features 100% unclamped inductive switching capability, low input capacitance (2597 pF), and fast switching (t_R = 5.0 ns), making it suitable for high-efficiency notebook battery power management and load-switching circuits.

For engineers reviewing the DMNH6008SPS datasheet, DMNH6008SPS pinout, DMNH6008SPS application, or DMNH6008SPS equivalent, key selection criteria include its 175°C junction rating, thermally efficient PowerDI5060-8 footprint, 1.6°C/W R_θJC, and automotive-qualified variant (DMNH6008SPSQ) for mission-critical embedded power control.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and high thermal robustness. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 3.3 V and 5 V logic drivers, while the 40.1 nC total gate charge at V_GS = 10 V supports efficient high-frequency DC-DC converter operation up to several hundred kHz.

The integrated body diode exhibits 33 ns reverse-recovery time and 33 nC Q_RR at I_F = 20 A, enabling synchronous rectification in buck converters. Thermal design is supported by validated transient impedance curves and dual power dissipation ratings (1.6 W on minimal FR-4, 3.3 W on 2 oz copper with thermal bias).

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with 8-terminal layout, 1.0 mm profile, and exposed drain paddle for low-junction-to-case thermal resistance (1.6°C/W). Molded green compound meets UL 94V-0 and RoHS 3 requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMNH6008SPS, DMNH6008SPSQ adds automotive qualification overhead without altering performance, while DMN6008LFG-7 trades thermal capability for footprint reduction-making the original optimal for industrial and computing applications demanding both power density and thermal margin.

Availability

DMNH6008SPS is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter high-side switching, and industrial motor drive applications requiring stable component supply, JEDEC-qualified reliability, and RoHS 3 compliance.

Supply support for DMNH6008SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and timing solutions for industrial, computing, and automotive markets.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-temperature switching in space- and thermal-constrained power systems where low R_DS(ON) and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

The DMNH6008SPS supports 11.7 A continuous drain current at T_A = +100°C with standard FR-4 mounting (note 6). This rating assumes 2 oz copper thermal bias and accounts for R_DS(ON) increase with junction temperature, verified across production lots per DS38136 Rev. 4-2.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a 1–5 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 2.0 Ω internal gate resistance and 2597 pF C_iss. Layout best practices include minimizing gate loop area and placing the resistor adjacent to the gate pin, as confirmed in Diodes' application note AN-2001.

Can DMNH6008SPS be used in synchronous rectification without external Schottky diodes?

Yes-the integrated body diode has 33 ns t_RR and 33 nC Q_RR at I_F = 20 A, enabling use as a synchronous rectifier in buck converters up to 300 kHz. However, for >95% efficiency above 5 A, external low-V_F Schottky clamping is advised to suppress reverse recovery losses during light-load discontinuous conduction mode.

Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the device is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard IPC-7095-compliant lead-free reflow profiles (peak 260°C, 60 seconds). The matte tin annealed finish ensures wetting angles <30° and void-free solder joints on ENIG and OSP finishes, as validated in Diodes' packaging reliability report PR-5060-8-2024.