Diodes Incorporated DMNH6008SPSQ-13

Overview

DMNH6008SPSQ from Diodes Incorporated is a 60V, 8.0mΩ (at V_GS = 10V), 16.5A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for +175°C operation. It serves as a high-efficiency power switch in automotive motor controls, DC-DC converters, and power management systems where thermal robustness and low conduction loss are critical.

For engineers reviewing the DMNH6008SPSQ datasheet, DMNH6008SPSQ pinout, DMNH6008SPSQ application, or DMNH6008SPSQ equivalent, this part supports high-temperature automotive designs requiring 100% unclamped inductive switching capability, low R_DS(ON), fast switching (t_F = 3.3ns), and thermally efficient packaging with R_θJC = 1.6°C/W.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low gate charge (Q_g = 40.1nC at V_GS = 10V) and minimized output capacitance (C_oss = 437pF), enabling high-frequency switching in synchronous buck converters and motor drive half-bridges. Its body diode exhibits t_RR = 33ns and Q_RR = 33nC under IF = 20A, di/dt = 100A/µs conditions.

The device is characterized for operation across -55°C to +175°C junction temperature range, with R_DS(ON) normalized to 1.8× at T_J = 175°C (vs. 25°C), and features a thermally enhanced PowerDI5060-8 package delivering R_θJC = 1.6°C/W and R_θJA = 46°C/W on FR-4 with 2oz copper thermal bias.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally optimized 8-pin surface-mount package with exposed drain pad, 1.0mm profile, and 0.097g mass. Features matte tin annealed terminals, UL 94V-0 molding compound, and J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IXTP50N10P and STL220N6F7, DMNH6008SPSQ delivers optimal balance of low R_DS(ON), fast switching, and automotive qualification in a thin-profile package - making it preferred for space-constrained, high-frequency automotive power stages.

Availability

DMNH6008SPSQ is available at Aetrix Electronics and suitable for automotive motor control, 48V DC-DC conversion, and ECU power management requiring stable component supply and long-term lifecycle assurance.

Supply support for DMNH6008SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-reliability power switching in engine, chassis, and body electronics.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMNH6008SPSQ supports 63A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with 2oz copper and thermal vias to an internal ground plane, and reflects its robust thermal performance in high-ambient environments like engine compartments.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has t_RR = 33ns and Q_RR = 33nC at IF = 20A, di/dt = 100A/µs, enabling use in synchronous rectification at frequencies up to 500kHz. However, for highest efficiency, external Schottky or GaN-based synchronous FETs are recommended above 1MHz due to lower Q_RR.

Does the PowerDI5060-8 package require solder paste stencil adjustments?

Yes - the PowerDI5060-8's exposed drain pad requires a 70–80% open-area stencil aperture with 0.127mm thickness to ensure void-free solder joint formation and optimal thermal transfer. Diodes' recommended pad layout (D1 = 4.90mm, E1 = 5.80mm) must be followed to achieve R_θJA = 46°C/W and avoid thermal delamination.

Can DMNH6008SPSQ replace older-generation 60V MOSFETs in existing AEC-Q100 designs?

Yes - its pin-compatible PowerDI5060-8 footprint and identical gate threshold (2–4V) allow drop-in replacement for legacy 60V MOSFETs such as DMN6008LSD, provided layout thermal enhancements are verified. The improved R_DS(ON) and UIS rating deliver measurable efficiency and reliability gains without redesign.