Diodes Incorporated DMNH6008SPSWQ-13

Overview

DMNH6008SPSWQ from Diodes Incorporated is a 60V, 8.0mΩ (at V_GS = 10V), 16.5A AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for +175°C operation and optimized for automotive motor control and DC-DC converter power stages.

For engineers reviewing the DMNH6008SPSWQ datasheet, DMNH6008SPSWQ pinout, DMNH6008SPSWQ application, or DMNH6008SPSWQ equivalent, key selection criteria include its 1.6°C/W R_θJC, 100% unclamped inductive switching rating, wettable flank terminals for automated optical inspection, and low 40.1nC total gate charge at 10V drive.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining robust avalanche capability (E_AS = 194mJ) and thermal stability up to +175°C junction temperature. Its PowerDI5060-8/SWP package features exposed drain pads on both top and bottom for enhanced thermal conduction.

The device integrates a fast-recovery body diode (t_RR = 33ns, Q_RR = 33nC) and exhibits low input capacitance (C_iss = 2597pF) with controlled Crss (118pF), enabling high-efficiency synchronous rectification and hard-switched SMPS topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), thermally enhanced surface-mount package with dual-side thermal pad exposure and wettable flank leads for solder joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG and IXTP50N10P, DMNH6008SPSWQ balances low R_DS(ON), moderate Q_g, AEC-Q101 compliance, and manufacturability-making it optimal for cost-sensitive, high-volume automotive power stages where thermal reliability and AOI compatibility are mandatory.

Availability

DMNH6008SPSWQ is available at Aetrix Electronics and suitable for automotive motor controls, DC-DC converters, and power management systems requiring stable component supply, AEC-Q101 qualification, and long-term lifecycle support.

Supply support for DMNH6008SPSWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and timing solutions for automotive, industrial, and computing markets.

The Power MOSFET product line-including the DMNH6008SPSWQ-is engineered specifically for demanding automotive environments, emphasizing AEC-Q101 qualification, thermal resilience, and manufacturable packaging for Tier 1 suppliers and module integrators.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMNH6008SPSWQ supports 63A continuous drain current when case temperature is maintained at +100°C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with 2oz copper and thermal vias to an internal ground plane, enabling high-current automotive power stages without external heatsinks.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dV/dt environments?

No. The DMNH6008SPSWQ has a gate threshold voltage (V_GS(TH)) of 2–4V and is fully enhanced at V_GS ≥ 4.5V. Its ±20V gate-source rating allows use of 0V/10V or 0V/12V drive; negative gate bias is not required for noise immunity, though a small negative turn-off (e.g., –2V) may improve dV/dt immunity in ultra-fast switching applications.

How does the wettable flank feature impact assembly yield?

The wettable flank design exposes vertical sidewalls of all eight leads, enabling automated optical inspection (AOI) to verify solder fillet height and wetting angle. This eliminates reliance on X-ray for hidden-joint verification, increasing first-pass yield by ~12% in high-density automotive PCB assemblies per Diodes' internal process data and IPC-A-610 Class 3 validation reports.

Is the body diode optimized for synchronous rectification?

Yes. The integrated body diode has t_RR = 33ns and Q_RR = 33nC at I_F = 20A, dI/dt = 100A/µs-parameters measured and guaranteed per JEDEC JESD24-11. These values enable efficient synchronous rectification in 300–500kHz DC-DC converters without significant reverse recovery loss or shoot-through risk when paired with appropriate gate timing.