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Diodes Incorporated DMNH6009SPS-13

Part No.:
DMNH6009SPS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMNH6009SPS-13.pdf
Description:
MOSFET BVDSS: 41V~60V POWERDI506
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,773

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Product details

Overview

DMNH6009SPS from Diodes Incorporated is a 60V, 95A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for +175°C operation, with RDS(ON) = 7.3 mΩ @ VGS = 10V and Qg = 37.3 nC, optimized for high-efficiency DC-DC converters and automotive power management.

For engineers reviewing the DMNH6009SPS datasheet, DMNH6009SPS pinout, DMNH6009SPS application, or DMNH6009SPS equivalent, key selection criteria include its low-profile 1.1 mm height, 100% production-tested UIS capability, thermal robustness up to +175°C junction temperature, and dual RDS(ON) specs at 4.5V and 10V gate drive.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve simultaneous low RDS(ON) and low gate charge-4.6 mΩ typical at 10V drive and 7.1 mΩ typical at 4.5V-enabling high-current switching with minimal conduction and switching losses in compact layouts.

Its PowerDI5060-8 package features an exposed drain pad thermally coupled to PCB copper, delivering RθJC = 1.5°C/W and supporting 3.3 W continuous power dissipation on 2 oz copper with thermal bias, while maintaining JEDEC-compliant reliability for industrial and automotive-grade applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage before avalanche onset; suitable for 48V system rails and transient-tolerant 36V designs.
RDS(ON) @ 10V 7.3 mΩ max - Enables ≤4.6W conduction loss at 95A ID, critical for high-current synchronous rectification.
RDS(ON) @ 4.5V 15 mΩ max - Ensures usable on-resistance under logic-level gate drive, supporting 3.3V/5V controller compatibility.
Qg @ 10V 37.3 nC - Low total gate charge reduces driver power demand and enables <25 ns turn-off delay (tD(OFF) = 16.9 ns).
TJ Range –55°C to +175°C - Rated for under-hood automotive, industrial motor drives, and high-ambient power supplies without derating.
EAS 226 mJ - Confirmed unclamped inductive switching energy rating ensures ruggedness in flyback and buck-boost topologies.
Ciss 1882 pF - Input capacitance value directly impacts gate drive loop stability and Miller-effect sensitivity in hard-switched converters.

Pinout & Package

PowerDI5060-8 is a surface-mount, 8-terminal, thermally enhanced package with dual exposed drain pads (pins 2, 4, 6, 8) and integrated source/gate terminals. Its 1.1 mm profile supports ultra-thin power modules and dense PCB layouts.

Pin/Terminal Circuit Role Design Meaning
1, 3, 5, 7 Source (S) Four parallel source connections reduce source inductance and improve current sharing across internal die segments.
2, 4, 6, 8 Drain (D) Exposed drain terminals form a unified thermal path to PCB copper; electrically common and used for heatsinking.
Top center (G) Gate (G) Single gate terminal located centrally for symmetric drive routing and minimized gate loop inductance.

Key Features

Feature Design Value
+175°C rated junction temperature Enables operation in engine bay, industrial enclosures, and sealed power supplies without external cooling or derating.
100% production UIS tested Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers in inductive load switching.
Low 1.1 mm package height Reduces vertical stack height in multi-layer power modules and allows integration into space-constrained consumer and telecom equipment.
Lead-free, halogen-free, RoHS 3 compliant Meets EU Directive 2015/863/EU with Br+Cl <1500 ppm and Sb <1000 ppm-qualified for green manufacturing and export compliance.
Thermally optimized PowerDI5060-8 RθJC = 1.5°C/W enables direct PCB thermal coupling, reducing reliance on mechanical heatsinks in medium-power applications.

Applications

Automotive DC-DC Converters Industrial Motor Drives

Use Scenario: 12V-to-48V bidirectional converter in 48V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–500 kHz with 10V gate drive.

Use Value: 7.3 mΩ RDS(ON) minimizes conduction loss at 60A continuous, while +175°C rating sustains performance during sustained engine-bay thermal transients.

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element handling pulsed 95A peak currents with fast 6.3 ns fall time.

Use Value: 37.3 nC Qg and 111 pF Crss enable clean commutation at 20 kHz PWM, reducing EMI and gate driver stress.

Server VRMs LED Backlighting Drivers

Use Scenario: High-current point-of-load (POL) regulator supplying CPU core voltage in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous buck FET operating at 1 MHz with 4.5V gate drive from digital controller.

Use Value: 15 mΩ RDS(ON) @ 4.5V ensures stable efficiency above 92% even at light loads, supported by low 18.5 nC Qg at 4.5V.

Use Scenario: Constant-current LED string switch in automotive headlamp modules.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch driving 5A–10A LED strings with 100% duty cycle capability.

Use Value: Body diode VSD = 0.7–1.2 V and tRR = 32 ns minimize reverse-recovery losses during high-frequency dimming.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP50N10P 100V VDSS, 50A ID, TO-220 package, RDS(ON) = 22 mΩ @ 10V Higher voltage margin but larger footprint and higher RDS(ON); requires heatsink mounting. Select when 100V blocking is mandatory and board space/thermal design permits through-hole assembly.
DMTH6010LPS-13 60V VDSS, 80A ID, PowerDI5060-8, RDS(ON) = 9.5 mΩ @ 10V, Qg = 29.5 nC Lower gate charge but higher RDS(ON); same package and thermal profile. Prefer for ultra-fast switching where gate drive power is constrained, accepting ~30% higher conduction loss.

Compared with IXTP50N10P and DMTH6010LPS-13, DMNH6009SPS delivers the lowest RDS(ON) in its class within the same PowerDI5060-8 footprint-making it optimal for high-current, space-limited applications where thermal resistance and conduction loss dominate design trade-offs.

Availability

DMNH6009SPS is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply, AEC-Q200-aligned reliability, and long-term lifecycle support.

Supply support for DMNH6009SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q standards.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-temperature power conversion in automotive, industrial, and computing applications where thermal resilience and low-loss switching are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH6009SPS supports 67A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and must be validated against actual PCB layout and ambient conditions using the provided RθJA values.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. With Qg = 37.3 nC and typical gate driver output impedance, a 3–10 Ω series resistor balances switching speed and EMI-confirmed by the datasheet's tD(ON)/tF test condition using Rg = 3 Ω.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has tRR = 32 ns and QRR = 30 nC at IF = 25A, enabling use in synchronous buck topologies. However, its forward voltage (VSD = 0.7–1.2 V) is higher than Schottky alternatives, so conduction loss should be evaluated against dead-time optimization.

Can DMNH6009SPS be used in automotive under-hood applications without derating?

Yes-it is qualified to +175°C junction temperature and meets JEDEC reliability standards referenced in AEC-Q. For under-hood use, ensure PCB thermal design maintains TJ ≤ 175°C using the provided RθJC = 1.5°C/W and RθJA = 46°C/W (2 oz copper) data.

DMNH6009SPS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
37.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1882 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.6W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMNH6009SPS-13 FAQ

1.How can I place an order for DMNH6009SPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6009SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6009SPS-13 reliable?

The price and inventory of DMNH6009SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6009SPS-13 is usually 5 days.

3.What payment methods are accepted for DMNH6009SPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6009SPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6009SPS-13?

DMNH6009SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6009SPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6009SPS-13?

For technical support, including DMNH6009SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6009SPS-13 requirements.

6.How does Aetrix verify that DMNH6009SPS-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6009SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6009SPS-13 meets industry standards.

7.What is the process for return or replacement of DMNH6009SPS-13?

All DMNH6009SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6009SPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6009SPS-13 part is unused and in its original packaging.

Return procedure for DMNH6009SPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6009SPS-13 Tags

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