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Diodes Incorporated DMNH6010SCTB-13
- Part No.:
- DMNH6010SCTB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
DMNH6010SCTB-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TO263 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:9,950
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Product details
Overview
DMNH6010SCTB-13 from Diodes Incorporated is a 60V, 133A N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, featuring 7.7 mΩ typical RDS(ON) at VGS = 10V, 100% production-tested UIS robustness, and operation up to +175°C junction temperature-designed for high-current DC-DC converters and automotive body control modules.
For engineers reviewing the DMNH6010SCTB-13 datasheet, DMNH6010SCTB-13 pinout, DMNH6010SCTB-13 application, or DMNH6010SCTB-13 equivalent, key selection criteria include its 0.4°C/W RθJC, 46 nC total gate charge, 2692 pF input capacitance, and AEC-Q101–capable qualification path for automotive power systems.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature, high-current power stages. Its 100% UIS testing ensures reliability under inductive load transients, and the exposed drain pad enables direct thermal coupling to heatsinks.
The device delivers 133A continuous drain current at TC = +25°C with 375W power dissipation capability, supported by a 0.4°C/W junction-to-case thermal resistance. Gate threshold voltage is tightly specified at 2–4V, enabling robust drive compatibility with standard 3.3V/5V/10V logic-level controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12V/24V/48V automotive and industrial bus applications |
| RDS(ON) max | 10 mΩ @ VGS = 10V - Enables <1.3 W conduction loss at 115A, critical for thermally constrained PCBs |
| ID cont | 133 A @ TC = +25°C - Supports high-power motor drives and battery protection circuits without paralleling |
| Qg | 46 nC - Reduces gate driver power demand and switching transition time in 100–500 kHz SMPS designs |
| RθJC | 0.4 °C/W - Allows >300W power handling with modest heatsink interface, verified per JEDEC JESD51-14 |
| TJ max | +175°C - Qualified for under-hood automotive environments and industrial motor control enclosures |
| EAS | 252 mJ - Confirmed avalanche energy rating supports unclamped inductive turn-off in solenoid and relay drivers |
Pinout & Package
Package: TO263AB (D2PAK), surface-mount with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, matte tin–annealed copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (GND reference) | Low-impedance return path for load current; tied to PCB ground plane for EMI control |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring <5V logic-compatible drive; 3.6 Ω internal gate resistance limits ringing |
| Pin 3 (Drain) | Power output / High-side switch node | Exposed metal pad on underside-must be soldered to large copper area for thermal and current conduction |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees survival of 71A avalanche current and 252mJ single-pulse energy without parameter shift |
| Low Qgd/Qg ratio | 13/46 nC = 0.28 - Minimizes Miller-induced shoot-through risk in half-bridge configurations |
| Thermal stability | RDS(ON) increases only 1.8× from –55°C to +175°C - Enables predictable current sharing across temperature |
| Green compliance | Halogen-free (<900 ppm Br+Cl), antimony-free, RoHS 3 compliant - Meets automotive ELV and IEC 61249-2-21 |
Applications
| Motor Control | Engine Management Systems |
|---|---|
Use Scenario: 48V mild-hybrid starter-generator inverters with peak currents >100A. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in three-phase bridge, switched at 20–40 kHz. Use Value: 7.7 mΩ RDS(ON) reduces conduction loss by 35% vs. legacy 15 mΩ parts, lowering heatsink mass by 40%. |
Use Scenario: Fuel injector driver in gasoline direct injection (GDI) engines. IC Role / Device Role / Timing Role: Low-side switch controlling 12V solenoid coil with 10 ms on-time and 100 A peak. Use Value: 252 mJ EAS rating eliminates need for external snubbers during inductive turn-off. |
| Body Control Electronics | DC-DC Converters |
Use Scenario: Central gateway module powering LED headlamps, HVAC actuators, and ADAS sensors. IC Role / Device Role / Timing Role: Synchronous rectifier in 12V-to-5V/3.3V buck converter delivering 25A continuous. Use Value: 0.4°C/W RθJC enables full 25A output without forced air, meeting IP67 enclosure thermal limits. |
Use Scenario: Primary-side switch in 48V-to-12V isolated DC-DC for server rack power distribution. IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched MOSFET in active clamp forward topology. Use Value: 46 nC Qg and 65 pF Crss reduce switching losses by 22% versus comparable 12 mΩ devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60V, 220A, 3.5 mΩ @ 10V, TO263AB - Lower RDS(ON) but higher Qg (95 nC) and no production UIS test data published | Better conduction efficiency above 150A; less suitable for fast-switching or avalanche-prone loads | Select when thermal budget allows larger heatsink and circuit lacks inductive stress |
| IXTH120N60L2 | 600V, 120A, 6.2 mΩ @ 10V, TO247 - Higher voltage rating, higher RθJC (0.6°C/W), not AEC-Q101 qualified | Designed for 400V+ industrial inverters; unsuitable for 48V automotive due to over-spec'd voltage and cost | Choose only if system requires 600V blocking or existing TO247 footprint reuse |
Compared with STL220N6F7 and IXTH120N60L2, DMNH6010SCTB-13 offers optimal balance of 100% UIS validation, 0.4°C/W thermal performance, and AEC-Q101 qualification readiness-making it preferred for automotive-grade 48V power stages where reliability under transient stress is non-negotiable.
Availability
DMNH6010SCTB-13 is available at Aetrix Electronics and suitable for motor control, engine management systems, and DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.
Supply support for DMNH6010SCTB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
DMNH6010SCTB-13 belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for under-hood and chassis-mounted power conversion where extended temperature operation and transient robustness are mandatory.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMNH6010SCTB-13 supports 94 A continuous drain current at case temperature +100°C, derated from 133 A at +25°C per its thermal resistance profile and SOA curve (Figure 12). This value assumes proper PCB copper area and heatsinking per JEDEC JESD51-2 guidelines.
Is this part qualified to AEC-Q101?
DMNH6010SCTB-13 is not itself AEC-Q101 qualified, but Diodes Incorporated states that automotive-grade versions with Q-suffix (e.g., DMNH6010SCTBQ-13) are available and manufactured in IATF 16949 certified facilities. The base part meets JEDEC high-reliability standards referenced in AEC-Q.
Can DMNH6010SCTB-13 be used in synchronous rectification?
Yes-the device's 0.8–1.2 V diode forward voltage at 25 A and low RDS(ON) make it suitable for synchronous rectification in buck and LLC topologies. Its 51.5 ns reverse recovery time and 92 nC QRR are optimized for soft-switching transitions at ≤300 kHz.
What is the recommended gate resistor for 100 kHz switching?
A 5.1 Ω series gate resistor is recommended for 100 kHz operation to limit peak gate current to ~2 A while maintaining <45 ns turn-off delay and minimizing overshoot. This value balances switching speed, EMI, and driver stress based on the device's 3.6 Ω intrinsic Rg and 46 nC Qg.
DMNH6010SCTB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2692 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
DMNH6010SCTB-13 FAQ
1.How can I place an order for DMNH6010SCTB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6010SCTB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6010SCTB-13 reliable?
The price and inventory of DMNH6010SCTB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6010SCTB-13 is usually 5 days.
3.What payment methods are accepted for DMNH6010SCTB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6010SCTB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6010SCTB-13?
DMNH6010SCTB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6010SCTB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6010SCTB-13?
For technical support, including DMNH6010SCTB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6010SCTB-13 requirements.
6.How does Aetrix verify that DMNH6010SCTB-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6010SCTB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6010SCTB-13 meets industry standards.
7.What is the process for return or replacement of DMNH6010SCTB-13?
All DMNH6010SCTB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6010SCTB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6010SCTB-13 part is unused and in its original packaging.
Return procedure for DMNH6010SCTB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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