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Diodes Incorporated DMNH6010SCTBQ-13
- Part No.:
- DMNH6010SCTBQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
DMNH6010SCTBQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TO263 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:4,511
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Product details
Overview
DMNH6010SCTBQ-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, rated for 133A continuous drain current at TC = +25°C, 10mΩ RDS(ON) @ VGS = 10V, and operation up to +175°C junction temperature-designed for high-reliability automotive motor control and DC-DC converter power stages.
For engineers reviewing the DMNH6010SCTBQ-13 datasheet, DMNH6010SCTBQ-13 pinout, DMNH6010SCTBQ-13 application, or DMNH6010SCTBQ-13 equivalent, key selection criteria include its 0.4°C/W RθJC, 100% production-tested UIS robustness, low 46nC total gate charge, and AEC-Q101 qualification with PPAP support for automotive-grade design-in.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction and switching losses in high-current, high-temperature automotive power stages. Its 60V BVDSS rating supports 48V system architectures, while the 175°C maximum junction temperature enables operation in engine bay or under-hood environments without derating.
The device integrates a robust body diode with 51.5ns reverse recovery time and 92nC QRR, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Its 2692pF Ciss and 65pF Crss support stable gate drive design with minimal Miller-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 60V - Supports 48V nominal automotive bus systems with 25% voltage margin for load dump transients. |
| RDS(ON) Max | 10mΩ @ VGS = 10V - Enables <1.3W conduction loss at 133A, critical for thermal management in compact power modules. |
| ID Max (TC=25°C) | 133A - Delivers high current density in TO263AB package, suitable for primary-side switching in 3–5kW DC-DC converters. |
| RθJC | 0.4°C/W - Allows direct heatsink mounting of the exposed drain pad for efficient thermal path to ambient. |
| Qg | 46nC - Reduces gate driver power requirement and switching transition time, lowering overall system EMI. |
| EAS | 252mJ - Confirmed by 100% production UIS testing, ensuring reliability in inductive load switching without snubbers. |
| TJ Operating Range | −55°C to +175°C - Meets AEC-Q101 requirements for under-hood electronics including engine control units and battery disconnect switches. |
Pinout & Package
Package: TO263AB (D2PAK), surface-mount with exposed drain pad for thermal and electrical connection. Molded plastic housing, UL 94V-0 rated, matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to PCB ground plane or source return path in half-bridge configurations. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <3.6Ω series resistance to damp ringing and prevent oscillation. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper area for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% UIS tested in production | Each unit passes unclamped inductive switching stress test (IAS = 71A, EAS = 252mJ), eliminating field failure risk from inductive kickback. |
| Low RDS(ON) × Qg figure of merit | 10mΩ × 46nC = 460Ω·nC - Balances conduction and switching losses for high-efficiency 100–500kHz switching in traction inverters and DC-DC stages. |
| +175°C rated junction temperature | Enables operation in high-ambient zones (e.g., near exhaust manifolds or battery packs) without thermal throttling or derating. |
| Halogen- and antimony-free "Green" construction | Meets automotive environmental compliance: <900ppm Br, <900ppm Cl, <1000ppm Sb; RoHS 3 compliant per EU Directive 2015/863/EU. |
Applications
| Motor Control | Engine Management Systems |
|---|---|
Use Scenario: High-current H-bridge driver for 12V/48V electric power steering (EPS) actuators. IC Role / Device Role / Timing Role: Low-side switch in dual-phase PWM-controlled bridge, handling bidirectional 100A peak currents. Use Value: 10mΩ RDS(ON) minimizes I²R heating during sustained torque delivery, while 175°C rating ensures reliability across −40°C to +125°C ambient ranges. |
Use Scenario: Fuel injector driver in gasoline direct injection (GDI) systems. IC Role / Device Role / Timing Role: High-speed, high-current switch controlling solenoid actuation with <10µs turn-on/off timing. Use Value: 46nC Qg enables fast, precise pulse-width control; 100% UIS testing prevents failure from inductive flyback during rapid de-energization. |
| Body Control Electronics | DC-DC Converters |
Use Scenario: Power distribution unit (PDU) for centralized control of lighting, HVAC, and window lift modules. IC Role / Device Role / Timing Role: Load switch managing up to 133A fused circuits with overcurrent and thermal shutdown protection. Use Value: Integrated body diode with 51.5ns tRR supports reverse-current protection and regenerative braking energy recapture in smart body controllers. |
Use Scenario: Primary-side switch in 48V-to-12V bi-directional DC-DC converter for vehicle electrification. IC Role / Device Role / Timing Role: High-frequency synchronous rectifier in phase-shifted full-bridge topology operating at 200kHz. Use Value: 0.4°C/W RθJC allows >95% efficiency at 3kW output with passive heatsinking; low Crss reduces cross-conduction risk during ZVS transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60V, 220A, 3.5mΩ @ VGS=10V, TO263-7L package; higher current rating but larger footprint and no AEC-Q101 documentation publicly available. | Targeted at industrial UPS and solar inverters; lacks PPAP documentation and IATF 16949 manufacturing evidence for automotive Tier-1 acceptance. | Select when higher current headroom is required and automotive qualification is not mandatory. |
| IXTH120N60L2 | 600V, 120A, 6.2mΩ @ VGS=10V, TO247 package; significantly higher voltage rating and different die technology (planar vs. trench). | Designed for 400V+ EV traction inverters; excessive voltage rating adds cost and capacitance penalty for 48V systems. | Choose only if system architecture requires 600V isolation or legacy 600V platform reuse. |
Compared with STL220N6F7AG and IXTH120N60L2, the DMNH6010SCTBQ-13 offers optimal balance of AEC-Q101 assurance, 60V-specific optimization, TO263AB thermal performance, and production-proven UIS robustness-making it the preferred choice for new 48V automotive power designs where qualification, size, and reliability are prioritized over raw current or voltage headroom.
Availability
DMNH6010SCTBQ-13 is available at Aetrix Electronics and suitable for motor control, engine management systems, and DC-DC converters requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.
Supply support for DMNH6010SCTBQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions, with operations certified to IATF 16949 and ISO 9001 standards.
The DMNH6010SCTBQ-13 belongs to Diodes' AEC-Q101-qualified automotive power MOSFET product line, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and body electronics.
FAQ
Is DMNH6010SCTBQ-13 qualified to AEC-Q101?
Yes. The DMNH6010SCTBQ-13 is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. Qualification includes temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing per AEC-Q101 Rev D requirements.
What is the maximum continuous drain current at TC = +100°C?
The maximum continuous drain current is 94A at TC = +100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer capability at elevated case temperatures, maintaining safe junction temperature below +175°C.
Does DMNH6010SCTBQ-13 have a built-in body diode?
Yes. It features an integrated body diode with typical forward voltage of 0.8V at IS = 25A and VGS = 0V, reverse recovery time of 51.5ns, and reverse recovery charge of 92nC. This diode is rated for 133A continuous forward current at TC = +25°C.
What is the recommended PCB layout for thermal performance?
Mount the exposed drain pad directly to a minimum 5.08mm × 1.10mm copper area with thermal vias to inner-layer ground planes. Use the suggested pad layout from Diodes' TO263AB outline (C = 5.08mm × 1.10mm, X1 = 10.41mm, Y2 = 15.99mm) and ensure ≥2oz copper thickness for optimal RθJC of 0.4°C/W.
DMNH6010SCTBQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2692 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
DMNH6010SCTBQ-13 FAQ
1.How can I place an order for DMNH6010SCTBQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6010SCTBQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6010SCTBQ-13 reliable?
The price and inventory of DMNH6010SCTBQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6010SCTBQ-13 is usually 5 days.
3.What payment methods are accepted for DMNH6010SCTBQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6010SCTBQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6010SCTBQ-13?
DMNH6010SCTBQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6010SCTBQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6010SCTBQ-13?
For technical support, including DMNH6010SCTBQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6010SCTBQ-13 requirements.
6.How does Aetrix verify that DMNH6010SCTBQ-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6010SCTBQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6010SCTBQ-13 meets industry standards.
7.What is the process for return or replacement of DMNH6010SCTBQ-13?
All DMNH6010SCTBQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6010SCTBQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6010SCTBQ-13 part is unused and in its original packaging.
Return procedure for DMNH6010SCTBQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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