Diodes Incorporated DMNH6011LK3-13

Overview

DMNH6011LK3-13 from Diodes Incorporated is a 55V, 80A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 12mΩ R_DS(ON) at V_GS = 10V and rated for continuous operation up to +175°C junction temperature. It delivers low conduction loss and fast switching performance with 49.1nC total gate charge and 127pF reverse transfer capacitance, making it suitable for high-efficiency DC-DC converters in automotive and industrial power supplies.

For engineers reviewing the DMNH6011LK3-13 datasheet, DMNH6011LK3-13 pinout, DMNH6011LK3-13 application, or DMNH6011LK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, 100% unclamped inductive switching rating (54A/147mJ), and thermal resistance of 1.1°C/W (junction-to-case), critical for thermally constrained motor control and on-board charger designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining robust avalanche capability (E_AS = 147mJ) and low gate charge (Q_g = 49.1nC at V_GS = 10V). Its body diode exhibits 30.1ns reverse recovery time and 25.7nC Q_RR, enabling efficient synchronous rectification in buck converters.

The device operates across –55°C to +175°C with gate threshold voltage tightly specified at 1–2V and normalized R_DS(ON) variation ≤1.8× over temperature. Its TO252 package provides exposed drain pad for low thermal resistance (R_θJC = 1.1°C/W) and supports high-current PCB layouts with 2oz copper and 1-inch² thermal pad.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP50N10P and DMTH6011LPSQ-13, DMNH6011LK3-13 offers optimal balance of cost, manufacturability, and thermal performance in TO252-ideal for medium-volume industrial inverters where DPAK compatibility and proven field reliability are prioritized over ultra-low R_θJC or extended voltage range.

Availability

DMNH6011LK3-13 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial DC-DC converters, and brushless DC motor drives requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for DMNH6011LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' "Advanced Power" product line, engineered specifically for high-current, high-temperature power conversion systems where R_DS(ON), UIS robustness, and AEC-Q101 compliance are mandatory design requirements.

FAQ

What is the maximum allowable gate-source voltage for DMNH6011LK3-13?

The absolute maximum gate-source voltage is ±12V per the datasheet's Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits must clamp V_GS within –10V to +10V during transients, especially during Miller plateau transitions in hard-switched topologies.

Does DMNH6011LK3-13 require a gate resistor for safe operation?

Yes-a gate resistor (typically 3–10Ω) is required to control dV/dt and prevent oscillation during switching. The datasheet specifies t_D(ON) and t_R test conditions using R_G = 3Ω; omitting this resistor increases EMI, causes shoot-through in half-bridges, and may exceed peak gate current ratings of the driver IC.

Can DMNH6011LK3-13 be used in synchronous rectification mode?

Yes-the device's body diode has characterized reverse recovery parameters (t_RR = 30.1ns, Q_RR = 25.7nC) and low forward voltage (V_SD = 0.7–1.2V), enabling use as a synchronous rectifier in buck or LLC converters when actively driven. However, external gate control timing must avoid overlap with high-side switch conduction.

Is the TO252 package of DMNH6011LK3-13 compatible with standard reflow profiles?

Yes-it is qualified for lead-free reflow per J-STD-020, Level 1 moisture sensitivity, and uses matte tin plating compatible with standard SAC305 profiles. Recommended peak temperature is 260°C for ≤30 seconds; the exposed drain pad requires adequate thermal relief and solder mask defined openings per Diodes' suggested pad layout (D1 = 5.21mm, E1 = 4.32mm).