Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMNH6011LK3Q-13

Part No.:
DMNH6011LK3Q-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMNH6011LK3Q-13.pdf
Description:
MOSFET N-CH 55V 80A TO252 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,984

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMNH6011LK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET rated for 55 V VDSS, 12 mΩ RDS(ON) @ 10 VGS, and 80 A continuous drain current at TC = +25°C, designed for high-reliability automotive power switching in engine management and DC/DC converters.

For engineers reviewing the DMNH6011LK3Q-13 datasheet, DMNH6011LK3Q-13 pinout, DMNH6011LK3Q-13 application, or DMNH6011LK3Q-13 equivalent, this part supports high-temperature operation up to +175°C, delivers low gate charge (49.1 nC @ 10 VGS), and features robust unclamped inductive switching capability for demanding automotive load control.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching with controlled Qgd/Qgs ratio (9.6 nC / 5.3 nC), enabling efficient hard-switching in 12 V and 24 V automotive systems. Its thermal resistance RθJC of 1.1 °C/W supports high-power density mounting on exposed drain pads.

The device integrates a co-packaged body diode with tRR = 30.1 ns and QRR = 25.7 nC at 100 A/μs di/dt, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 55 V - Withstands peak transients in 24 V automotive battery systems without avalanche breakdown.
RDS(ON) @ 10 VGS 12 mΩ max - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements in compact modules.
Qg @ 10 VGS 49.1 nC - Low gate drive energy reduces controller IC loading and enables >200 kHz PWM operation.
tF 10.2 ns - Fast fall time minimizes switching overlap losses in high-frequency DC/DC converters.
TJ max +175°C - Qualified for under-hood applications including engine control units and transmission control modules.
EAS 147 mJ - Sustains repetitive inductive turn-off stress in solenoid drivers and motor phase switches.
IDM 180 A - Supports short-circuit pulse handling in safety-critical load protection circuits.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, matte tin-plated copper leadframe, RoHS and halogen-free compliant.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal Low-side return path; connects to ground plane or current-sense resistor for accurate monitoring.
Pin 2 (Gate) Control input High-impedance MOSFET gate requiring <1.7 Ω series resistance to damp ringing during fast edge transitions.
Pin 3 (Drain) Power output Exposed metal pad (top view) - must be soldered to large copper area for thermal dissipation and low-inductance high-current routing.

Key Features

Feature Design Value
AEC-Q101 qualification with PPAP support Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
100% unclamped inductive switching (UIS) tested Guarantees reliable operation in relay replacement and inductive load switching without external snubbers.
Low RDS(ON) @ 4.5 VGS (18 mΩ) Enables direct drive from 5 V microcontrollers or automotive logic-level gate drivers without level-shifting.
Normalized RDS(ON) variation ≤1.2× from −55°C to +175°C Ensures stable current handling across full automotive temperature range without derating penalties.
Low Ciss (3077 pF) and Crss/Ciss ratio (4.1%) Reduces Miller-induced shoot-through risk and improves EMI performance in high-speed switching.

Applications

Engine Management Systems Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems.

IC Role / Device Role / Timing Role: Power switch controlling precise 1–2 ms fuel pulse width with 100 A peak current capability.

Use Value: 12 mΩ RDS(ON) limits voltage drop to <1.2 V at 100 A, preserving injector solenoid actuation margin under cold cranking.

Use Scenario: Smart power distribution for door lock actuators and mirror positioners.

IC Role / Device Role / Timing Role: Protected load switch with integrated diagnostics and overcurrent shutdown.

Use Value: 175°C rating allows placement near HVAC ducts; UIS capability withstands inductive kickback from brushed DC motors.

DC/DC Converters Transmission Control Units

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch operating at 250 kHz with body diode reverse recovery tRR = 30.1 ns.

Use Value: QRR = 25.7 nC minimizes dead-time losses and enables ZVS-assisted soft switching.

Use Scenario: Solenoid valve driver for hydraulic pressure modulation in 8-speed automatic transmissions.

IC Role / Device Role / Timing Role: High-current, high-reliability switch delivering 50 A pulses with 147 mJ avalanche energy absorption.

Use Value: EAS rating ensures survival during rapid valve de-energization without external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V VDSS, 0.75 mΩ RDS(ON) @ 10 VGS, 220 A ID, PowerFLAT 5x6 package Limited to 40 V systems; unsuitable for 48 V or transient-tolerant 24 V designs requiring 55 V rating Select only for 12 V/24 V low-voltage, ultra-high-current applications where lower RDS(ON) outweighs voltage margin needs.
IXTQ1N50P 500 V VDSS, 1.2 Ω RDS(ON), TO-220 package, non-AEC-Q101 Higher voltage rating but 100× higher RDS(ON); lacks automotive qualification and thermal performance Not recommended for automotive use; consider only for industrial AC-line or high-voltage DC applications outside AEC scope.

Compared with STL220N4F7AG and IXTQ1N50P, DMNH6011LK3Q-13 uniquely balances 55 V robustness, 12 mΩ conduction, AEC-Q101 compliance, and TO-252 thermal efficiency-making it optimal for space-constrained, thermally aggressive automotive power stages where voltage margin and qualification are non-negotiable.

Availability

DMNH6011LK3Q-13 is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC/DC converters requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for DMNH6011LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for under-hood and chassis-mounted applications demanding AEC-Q101 qualification, extended temperature operation, and robust transient handling.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DMNH6011LK3Q-13 has a specified operating junction temperature range of −55°C to +175°C. Continuous operation at +175°C is permitted when thermal design ensures actual TJ does not exceed this limit, verified via RθJC = 1.1 °C/W and proper PCB copper layout per datasheet Figure 6 and suggested pad dimensions.

Is the TO-252 package lead-free and RoHS compliant?

Yes. The DMNH6011LK3Q-13 uses a matte tin finish over copper leadframe and green molding compound compliant with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU, with bromine and chlorine content below 900 ppm each and antimony below 1000 ppm.

Can this MOSFET be used in synchronous rectification without external diode parallel?

Yes. Its body diode exhibits tRR = 30.1 ns and QRR = 25.7 nC at 100 A/μs, enabling effective synchronous rectification in buck converters up to 250 kHz without external Schottky diodes-provided gate timing avoids cross-conduction.

What is the gate threshold voltage range, and how does it vary with temperature?

VGS(TH) is specified from 1.0 V to 2.0 V at 250 μA ID. As shown in Figure 8, it decreases linearly with rising junction temperature-approximately 1.45 V at −55°C and 1.05 V at +175°C-supporting stable turn-on behavior across the full automotive temperature range.

DMNH6011LK3Q-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
49.1 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3077 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMNH6011LK3Q-13 FAQ

1.How can I place an order for DMNH6011LK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6011LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6011LK3Q-13 reliable?

The price and inventory of DMNH6011LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6011LK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMNH6011LK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6011LK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6011LK3Q-13?

DMNH6011LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6011LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6011LK3Q-13?

For technical support, including DMNH6011LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6011LK3Q-13 requirements.

6.How does Aetrix verify that DMNH6011LK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6011LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6011LK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMNH6011LK3Q-13?

All DMNH6011LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6011LK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6011LK3Q-13 part is unused and in its original packaging.

Return procedure for DMNH6011LK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6011LK3Q-13 Tags

  • DMNH6011LK3Q-13
  • DMNH6011LK3Q-13 PDF
  • DMNH6011LK3Q-13 Datasheet
  • DMNH6011LK3Q-13 Specifications
  • DMNH6011LK3Q-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMNH6011LK3Q-13
  • Buy DMNH6011LK3Q-13
  • DMNH6011LK3Q-13 Price
  • DMNH6011LK3Q-13 Distributor
  • DMNH6011LK3Q-13 Supplier
  • DMNH6011LK3Q-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER