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Diodes Incorporated DMNH6012LK3-13
- Part No.:
- DMNH6012LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMNH6012LK3-13.pdf
- Description:
- MOSFET N-CH 60V 60A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:4,662
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Product details
Overview
DMNH6012LK3-13 from Diodes Incorporated is a 60V, 12mΩ (at VGS = 10V), 60A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, qualified to AEC-Q101 and rated for continuous operation up to +175°C junction temperature. It delivers low RDS(ON), high unclamped inductive switching capability (45A/100mJ), and low input capacitance (1926pF), making it suitable for automotive body control modules and high-efficiency DC/DC converters.
For engineers reviewing the DMNH6012LK3-13 datasheet, DMNH6012LK3-13 pinout, DMNH6012LK3-13 application, or DMNH6012LK3-13 equivalent, key selection criteria include its 175°C thermal rating, 12mΩ on-resistance at 10V gate drive, AEC-Q101 qualification, TO252 thermal performance (RθJC = 1.2°C/W), and robust 100% UIS capability - critical for automotive power switching reliability.
Technical Context
This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss and fast switching in 12V–48V automotive power rails. Its gate threshold voltage (1–3V) enables compatibility with 3.3V and 5V logic-level drivers, while its 112pF reverse transfer capacitance (Crss) supports stable high-frequency PWM operation in synchronous buck stages.
The device integrates a robust body diode with 28ns reverse recovery time and 23nC QRR, enabling efficient freewheeling in hard-switched topologies. Thermal design is supported by a low RθJC of 1.2°C/W and validated SOA curves up to 10s pulse width at TC = 25°C, confirming suitability for intermittent high-current loads like solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands peak transients in 48V automotive systems without avalanche breakdown. |
| RDS(ON) max | 12mΩ @ VGS = 10V - Enables ≤7.2W conduction loss at 30A, reducing heatsink requirements. |
| ID max | 60A @ TC = 25°C - Supports high-current motor drivers and battery disconnect switches. |
| TJ max | +175°C - Certified for under-hood applications where ambient exceeds 125°C. |
| EAS | 100mJ - Guarantees single-pulse energy handling during inductive load turn-off without failure. |
| Ciss | 1926pF - Low input capacitance reduces gate drive power and improves switching efficiency above 100kHz. |
| Qg total | 35.2nC @ VGS = 10V - Enables fast turn-on with standard 1A gate drivers (tD(ON) = 6.4ns). |
Pinout & Package
Package: TO252 (DPAK), surface-mount, 3-terminal plastic case with exposed drain pad for thermal enhancement. Molded green compound, UL 94V-0 rated, matte tin–annealed copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or current-sense shunt for accurate monitoring. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <35.2nC charge for full enhancement; sensitive to ESD. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom - primary thermal path to PCB copper; must be soldered to ≥1in² 2oz Cu. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTGB, HTRB, and UHAST - eliminates requalification effort. |
| 100% Unclamped Inductive Switching (UIS) | Rated for 45A/100mJ single-pulse energy - ensures field reliability in relay/solenoid driving without external snubbers. |
| +175°C maximum junction temperature | Enables placement near heat sources (e.g., engine bay ECUs) without derating or forced cooling. |
| Low RDS(ON) @ 4.5V | 18mΩ at VGS = 4.5V - supports direct drive from 5V microcontrollers in cost-sensitive body electronics. |
| Halogen- and antimony-free "Green" construction | <900ppm Br/Cl, <1000ppm Sb - meets global environmental compliance (RoHS 2, ELV) without sacrificing thermal or electrical performance. |
Applications
| Automotive Body Control Module (BCM) | 48V DC/DC Converter Primary Switch |
|---|---|
|
Use Scenario: Driving door lock actuators, seat position motors, and interior lighting loads in modern BCMs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12V/24V loads with PWM dimming or timed actuation. Use Value: 175°C rating allows integration into compact, sealed BCM housings; 12mΩ RDS(ON) minimizes self-heating during extended duty cycles. |
Use Scenario: Primary synchronous rectifier switch in isolated 48V-to-12V buck converters for ADAS power domains. IC Role / Device Role / Timing Role: High-frequency (200–500kHz) power switch with fast tF = 5ns and low Qgd/Qgs ratio for ZVS compatibility. Use Value: 1926pF Ciss and 112pF Crss reduce switching losses; 100% UIS withstands transformer leakage inductance spikes. |
| Engine Bay Fan Controller | 12V Battery Disconnect Switch |
|
Use Scenario: Controlling brushless DC cooling fans exposed to under-hood temperatures exceeding 125°C ambient. IC Role / Device Role / Timing Role: PWM-controlled high-current switch managing fan speed via variable duty cycle at 20–30kHz. Use Value: Stable RDS(ON) over temperature (±15% variation from −55°C to +175°C) ensures consistent torque and acoustic noise control. |
Use Scenario: Isolating starter battery from auxiliary loads during engine cranking or fault conditions. IC Role / Device Role / Timing Role: Bidirectional blocking switch (with external diode) handling 60A continuous and 120A pulsed currents. Use Value: 60V VDSS provides margin against load-dump transients (ISO 7637-2 Pulse 5a); TO252 thermal pad sustains >3.8W dissipation on 1in² copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N6LF8AG | 60V, 1.3mΩ @ 10V, TO263 package - lower RDS(ON) but larger footprint and higher Ciss (3200pF). | Better conduction efficiency but requires larger PCB area and more gate drive power; not TO252 drop-in. | Select when thermal budget is tighter than board space, and gate driver can supply >50nC. |
| IXTP50N10P | 100V, 10mΩ @ 10V, TO220 - higher voltage rating but no AEC-Q101 qualification and 150°C TJ max. | Suitable for industrial 48V systems but not certified for automotive deployment; lacks UIS rating. | Use only in non-automotive, non-safety-critical 100V applications where AEC-Q101 is not mandated. |
Compared with STL130N6LF8AG and IXTP50N10P, DMNH6012LK3-13 uniquely balances AEC-Q101 compliance, TO252 compactness, 175°C operation, and verified UIS robustness - making it the preferred choice for space-constrained, thermally aggressive automotive power stages where qualification and reliability are mandatory.
Availability
DMNH6012LK3-13 is available at Aetrix Electronics and suitable for automotive body control modules, 48V DC/DC converters, engine bay fan controllers, and battery disconnect switches requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMNH6012LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for automotive power switching applications demanding high temperature resilience, transient robustness, and long-term parametric stability.
FAQ
Is DMNH6012LK3-13 qualified for automotive applications?
Yes. DMNH6012LK3-13 is fully qualified to AEC-Q101 Rev. D standards, including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) testing. It carries full automotive PPAP documentation and is approved for use in body electronics, chassis, and powertrain subsystems per Diodes' qualification report DS37381.
What is the recommended PCB layout for thermal performance?
For optimal thermal performance, the exposed drain pad must be soldered to a minimum 1-inch square area of 2-ounce copper on the primary side, with ≥4 thermal vias (0.3mm diameter, filled or plated) connecting to inner/ground planes. The datasheet specifies this layout achieves RθJA = 40°C/W - critical to sustain 3.8W at TC = 100°C.
Can DMNH6012LK3-13 be driven directly by a 3.3V microcontroller?
No. At VGS = 3.3V, RDS(ON) rises significantly beyond specification (typical >45mΩ), increasing conduction loss and thermal stress. It requires ≥4.5V gate drive for reliable 50A operation; a dedicated gate driver (e.g., TC4427) or level-shifter is required for 3.3V MCU interfaces.
Does this MOSFET include an integrated ESD protection diode on the gate?
No. DMNH6012LK3-13 has no internal gate protection diode. Its gate oxide is rated for ±20V VGS, but real-world ESD events exceed this. External 10kΩ series gate resistor and 12V Zener clamp (to source) are strongly recommended per Diodes' application note AN-4001 to prevent gate oxide rupture during handling or system operation.
DMNH6012LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1926 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMNH6012LK3-13 FAQ
1.How can I place an order for DMNH6012LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6012LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6012LK3-13 reliable?
The price and inventory of DMNH6012LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6012LK3-13 is usually 5 days.
3.What payment methods are accepted for DMNH6012LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6012LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6012LK3-13?
DMNH6012LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6012LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6012LK3-13?
For technical support, including DMNH6012LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6012LK3-13 requirements.
6.How does Aetrix verify that DMNH6012LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6012LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6012LK3-13 meets industry standards.
7.What is the process for return or replacement of DMNH6012LK3-13?
All DMNH6012LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6012LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6012LK3-13 part is unused and in its original packaging.
Return procedure for DMNH6012LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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