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Diodes Incorporated DMNH6012LK3Q-13
- Part No.:
- DMNH6012LK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMNH6012LK3Q-13.pdf
- Description:
- MOSFET N-CH 60V 80A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:4,942
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Product details
Overview
DMNH6012LK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 60V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 12 mΩ RDS(ON) at VGS = 10 V and 80 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports unclamped inductive switching for automotive engine management and DC/DC converter applications.
For engineers reviewing the DMNH6012LK3Q-13 datasheet, DMNH6012LK3Q-13 pinout, DMNH6012LK3Q-13 application, or DMNH6012LK3Q-13 equivalent, this page delivers verified thermal ratings, gate charge values (Qg = 35.2 nC @ 10 V), body diode recovery metrics (tRR = 28 ns), and AEC-Q101 qualification evidence - all critical for high-reliability automotive power design.
Technical Context
This MOSFET uses planar silicon process with optimized trench-assisted channel geometry to achieve low RDS(ON) while maintaining robust avalanche capability (EAS = 100 mJ). Its gate threshold voltage (VGS(TH) = 1–3 V) enables reliable turn-on with standard 4.5 V or 10 V logic-level drivers.
The device integrates a fast, low-VSD body diode (VSD = 0.7–1.2 V @ IS = 1.7 A) with QRR = 23 nC and tRR = 28 ns under 100 A/μs di/dt - enabling efficient synchronous rectification and freewheeling in high-frequency DC/DC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V and 24 V automotive battery rail protection and switching |
| RDS(ON) Max | 12 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 80 A, reducing heatsink requirements |
| ID Continuous | 80 A @ TC = +25°C - Supports high-current motor drive and starter solenoid control stages |
| TJ Range | −55°C to +175°C - Qualified for under-hood environments including engine bay and transmission control units |
| Qg | 35.2 nC @ VGS = 10 V - Determines gate driver power requirement and switching speed in 100–500 kHz converters |
| EAS | 100 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during load dump or inductive kick events |
| tRR | 28 ns - Fast body diode recovery minimizes cross-conduction losses in half-bridge and synchronous buck designs |
Pinout & Package
Package: TO252 (DPAK), surface-mount, exposed drain pad for thermal dissipation. Molded plastic housing with matte tin-plated copper leadframe; RoHS-compliant and halogen-free ("Green" per Diodes definition).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or low-side switch node; carries full load current |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate; requires <35.2 nC charge for full turn-on; sensitive to ESD |
| Pin 3 (Drain) | Power output / high-side connection | Exposed metal pad on bottom of package; electrically connected to drain; primary thermal path to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation |
| 100% unclamped inductive switching (UIS) | Guaranteed avalanche ruggedness up to 100 mJ enables operation without external snubbers in relay driving and solenoid control |
| +175°C maximum junction temperature | Supports placement in high-ambient zones (e.g., near exhaust manifolds or power inverters) without derating penalties |
| Low Ciss (1926 pF) & Crss (112 pF) | Reduces Miller effect and improves gate drive efficiency in hard-switched and resonant topologies |
| RoHS 3 & "Green" compliant | Meets EU Directive 2015/863/EU with Br+Cl <1500 ppm and Sb <1000 ppm - required for global OEM vehicle programs |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12 V nominal with peak transients to 40 V. IC Role / Device Role / Timing Role: Power switch controlling precise 1–2 ms fuel pulse width; handles repetitive 80 A peak currents during cold start. Use Value: 12 mΩ RDS(ON) limits pulse-time power loss to <7.7 W; 175°C rating avoids thermal shutdown during extended idling in hot climates. |
Use Scenario: Low-side load switch for LED headlamp dimming and adaptive front-lighting (AFS) actuators. IC Role / Device Role / Timing Role: PWM-controlled power stage switching at 200–500 Hz; manages up to 70 A pulsed loads with minimal voltage drop. Use Value: 18 mΩ RDS(ON) @ 4.5 V enables direct microcontroller GPIO drive; fast tF = 5 ns ensures clean PWM edges and reduced EMI. |
| DC/DC Converters | Start-Stop Systems |
Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side switch conducting continuous 60 A with reverse recovery managed by body diode during dead time. Use Value: tRR = 28 ns and QRR = 23 nC minimize shoot-through risk and conduction loss during transition; low Coss = 330 pF eases ZVS implementation. |
Use Scenario: Starter motor engagement/disengagement control in 12 V start-stop systems with frequent cranking cycles. IC Role / Device Role / Timing Role: High-current, high-reliability switch handling 80 A inrush and sustaining 40 A cranking current for >10 s. Use Value: 100 mJ EAS withstands repeated inductive energy spikes from solenoid coil de-energization; TO252 thermal pad sustains >3.8 W dissipation on 1″² copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(ON) = 1.2 mΩ @ 10 V (lower), but rated only to +150°C and not AEC-Q101 qualified | Lacks PPAP support and fails automotive thermal stress screening above 150°C ambient | Prefer for industrial DC/DC where cost-per-watt dominates and qualification is not mandatory |
| IXTP50N10P | 100 V VDSS, RDS(ON) = 20 mΩ @ 10 V, TO-220 package, +175°C rated, AEC-Q101 qualified | Higher voltage margin but larger footprint and higher RDS(ON); lacks low-VGS drive compatibility | Choose when system overvoltage exceeds 60 V or TO-220 mounting is required for legacy board layout |
Compared with STL220N6F7 and IXTP50N10P, DMNH6012LK3Q-13 uniquely balances ultra-low on-resistance, full AEC-Q101 compliance, +175°C operation, and TO252 space efficiency - making it optimal for next-gen compact automotive power stages where qualification, thermal density, and gate drive simplicity are jointly constrained.
Availability
DMNH6012LK3Q-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC/DC converters requiring stable component supply across automotive production lifecycles.
Supply support for DMNH6012LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, and consumer markets, with ISO/TS 16949-certified facilities.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability switching in engine control, safety-critical lighting, and 12/48 V power conversion systems.
FAQ
What is the maximum allowable gate-source voltage for DMNH6012LK3Q-13?
The absolute maximum VGS is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤15 V with transient suppression, especially in automotive environments with load dump events.
Does DMNH6012LK3Q-13 require a gate resistor for safe switching?
Yes - a series gate resistor (typically 5–22 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The device's Qg = 35.2 nC and Rg = 2.0 Ω internal resistance mean external resistance directly sets switching speed and EMI profile in practical layouts.
Can DMNH6012LK3Q-13 be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Its positive RDS(ON) temperature coefficient (normalized RDS(ON) rises with TJ) enables current sharing; however, thermal coupling between paralleled TO252 packages must be minimized to avoid runaway.
Is the exposed drain pad electrically isolated from the PCB ground plane?
No - the exposed drain pad is electrically connected to the drain terminal and must be soldered to a dedicated, non-grounded copper pour. It must never be tied to system ground unless the circuit topology explicitly requires drain-to-ground referencing (e.g., low-side switch configuration).
DMNH6012LK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1926 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMNH6012LK3Q-13 FAQ
1.How can I place an order for DMNH6012LK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6012LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6012LK3Q-13 reliable?
The price and inventory of DMNH6012LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6012LK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMNH6012LK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6012LK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6012LK3Q-13?
DMNH6012LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6012LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6012LK3Q-13?
For technical support, including DMNH6012LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6012LK3Q-13 requirements.
6.How does Aetrix verify that DMNH6012LK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6012LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6012LK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMNH6012LK3Q-13?
All DMNH6012LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6012LK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6012LK3Q-13 part is unused and in its original packaging.
Return procedure for DMNH6012LK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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