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Diodes Incorporated DMNH6012SPS-13
- Part No.:
- DMNH6012SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMNH6012SPS-13.pdf
- Description:
- MOSFET N-CH 60V 50A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,147
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Product details
Overview
DMNH6012SPS-13 from Diodes Incorporated is a 60V, 50A N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, optimized for high-efficiency DC-DC converters and backlighting systems. It delivers 11 mΩ RDS(ON) at VGS = 10 V, supports 175°C junction operation, and features 100% unclamped inductive switching (UIS) rating up to 45 A / 100 mJ.
For engineers reviewing the DMNH6012SPS-13 datasheet, DMNH6012SPS-13 pinout, DMNH6012SPS-13 application, or DMNH6012SPS-13 equivalent, key selection criteria include low gate charge (QG = 35.2 nC @ 10 V), thermal robustness (RθJC = 3.8°C/W), and thin-profile packaging (<1.1 mm height) for space-constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to simultaneously minimize conduction loss and switching loss. Its 8–11 mΩ RDS(ON) range at 50 A/10 V and low QGD/QGS ratio (6.9 nC / 7.6 nC) enable fast, low-loss hard-switching in synchronous buck topologies operating up to 1 MHz.
The device integrates a robust body diode with tRR = 28 ns and QRR = 23 nC, supporting high-frequency freewheeling in continuous conduction mode (CCM) converters. Its JEDEC-qualified reliability and 175°C TJ rating make it suitable for automotive-grade power management where thermal margin is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands 60 V drain-source blocking voltage in off-state, enabling use in 48 V input systems with safety margin. |
| RDS(ON) | 11 mΩ max @ VGS = 10 V, ID = 50 A - Limits conduction loss to ≤27.5 W at full current, critical for thermally constrained PCB layouts. |
| QG | 35.2 nC @ VGS = 10 V - Determines gate drive power requirement; enables efficient driving with standard 1-A peak gate drivers. |
| tRR | 28 ns - Enables clean body-diode commutation in high-frequency synchronous rectification without excessive voltage overshoot. |
| RθJC | 3.8°C/W - Allows direct thermal coupling to heatsink or copper plane, supporting >3 W continuous dissipation with <15°C junction-to-case rise. |
| TJ max | +175°C - Permits operation in under-hood automotive environments or sealed industrial enclosures without derating at ambient up to +125°C. |
| EAS | 100 mJ - Guarantees survivability during transient overloads such as load dump or inductive kickback in motor control or converter applications. |
Pinout & Package
Package: PowerDI5060-8 - Surface-mount, 8-terminal, dual-side thermal pad package with 1.0 mm nominal profile, UL 94V-0 molding compound, and matte tin–annealed copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (Pin 1, 7, 8) | Source | Common return node for power path; pins 1/7/8 are internally paralleled for low-inductance, high-current source connection. |
| D (Pin 2, 3, 5, 6) | Drain | Main power input/output node; pins 2/3/5/6 are internally paralleled to handle 50 A continuous current with minimal resistance. |
| G (Pin 4) | Gate | Control terminal requiring 2–4 V threshold; isolated from power terminals to prevent noise coupling into drive circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at high current | 11 mΩ @ 50 A/10 V reduces I²R losses by ≥30% vs. comparable 60 V MOSFETs in 12–48 V DC-DC stages. |
| 100% UIS rated | 45 A / 100 mJ avalanche energy ensures single-pulse robustness during inductive turn-off without external snubbers. |
| Thin 1.1 mm profile | Enables integration into ultra-low-height power modules (e.g., LED driver boards ≤1.6 mm total thickness). |
| JEDEC-qualified reliability | Meets AEC-Q200 stress test requirements for temperature cycling, HAST, and bond wire pull, supporting automotive qualification paths. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets EU ELV and China RoHS II directives. |
Applications
| Automotive DC-DC Converters | Industrial LED Backlight Drivers |
|---|---|
Use Scenario: Step-down conversion from 48 V battery rail to 12 V for infotainment display power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier in 300 kHz buck converter, switching with precise dead-time control. Use Value: 11 mΩ RDS(ON) and 35.2 nC QG reduce combined conduction + switching loss to <1.2 W at 25 A, enabling passive cooling. | Use Scenario: Constant-current LED string driver in factory automation HMIs with 24 V input and 36 V output. IC Role / Device Role / Timing Role: Low-side switch in boost topology, modulated at 500 kHz for PWM dimming compatibility. Use Value: 175°C TJ rating allows sustained 45 A pulsed operation inside sealed metal enclosures without thermal shutdown. |
| Server VRM High-Density POL | Telecom 48 V Intermediate Bus Converters |
Use Scenario: Point-of-load regulator supplying 1.8 V/60 A to ASICs on AI accelerator cards. IC Role / Device Role / Timing Role: Bottom-side FET in dual-phase interleaved buck stage, driven by integrated controller with adaptive gate timing. Use Value: Parallel drain/source pins reduce package inductance to <0.4 nH, minimizing voltage spikes during 100 A/µs dI/dt transitions. | Use Scenario: Primary-side switch in half-bridge isolated DC-DC module converting 48 V to 12 V for base station RF amplifiers. IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology, operating at 200 kHz with zero-voltage switching. Use Value: 28 ns tRR and low QRR suppress reverse recovery ringing, reducing EMI filter size by 40% vs. legacy 60 V MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6012LPS-13 | Same RDS(ON) (11 mΩ), but in PowerDI3333 package (3.3 × 3.3 mm); lower QG (28.5 nC) but higher RθJA (62°C/W). | Better suited for compact, low-power-density designs where gate drive efficiency outweighs thermal limits. | Select when board area is constrained and peak current ≤35 A; avoid in >85°C ambient or high-duty-cycle operation. |
| IPB60R125P7XKSA1 | Higher VDSS (650 V), 125 mΩ RDS(ON), TO-263 package; not drop-in - different pinout, footprint, and drive requirements. | Targeted at offline SMPS, not low-voltage DC-DC; incompatible with 60 V system-level design assumptions. | Not a functional substitute; only consider if redesigning for universal input AC-DC or high-voltage isolation. |
Compared with DMTH6012LPS-13, DMNH6012SPS-13 trades slightly higher gate charge for 2.5× better thermal resistance (RθJC = 3.8 vs. 9.5°C/W) and 40% higher current rating - making it preferable for sustained 50 A operation in thermally demanding environments.
Availability
DMNH6012SPS-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial LED backlight drivers, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.
Supply support for DMNH6012SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.
The DMNH6012SPS belongs to Diodes' Power MOSFET product line, engineered specifically for high-current, high-temperature DC-DC conversion in space- and thermal-constrained applications where low RDS(ON) and robust avalanche capability are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMNH6012SPS-13 supports 30 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating from 50 A at 25°C reflects thermal limitations of the PowerDI5060-8 package under real-world PCB thermal conditions with 2 oz copper and thermal vias.
Does this MOSFET require a gate resistor for safe operation in a 500 kHz buck converter?
Yes - a 3 Ω gate resistor is recommended per the datasheet's dynamic characterization test condition (tD(ON), tR). This value balances switching speed (to minimize transition loss) and gate oscillation damping, especially given the device's 2.0 Ω intrinsic gate resistance and low 112 pF CRSS.
Can DMNH6012SPS-13 replace DMNH6012SPSQ in automotive applications?
No - DMNH6012SPSQ is the AEC-Q101 qualified variant with additional stress testing and traceability documentation. While electrically identical, DMNH6012SPS-13 lacks automotive qualification evidence and is intended for industrial/commercial use only per Diodes' ordering information and quality definitions.
What is the body diode forward voltage at 25°C and 1.7 A?
The body diode forward voltage (VSD) is 0.7 V (typical) and 1.2 V (max) at IS = 1.7 A and TA = +25°C, as stated in the Electrical Characteristics table. This low VSD minimizes freewheeling loss during synchronous rectification in buck converters.
DMNH6012SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1926 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMNH6012SPS-13 FAQ
1.How can I place an order for DMNH6012SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6012SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6012SPS-13 reliable?
The price and inventory of DMNH6012SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6012SPS-13 is usually 5 days.
3.What payment methods are accepted for DMNH6012SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6012SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6012SPS-13?
DMNH6012SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6012SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6012SPS-13?
For technical support, including DMNH6012SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6012SPS-13 requirements.
6.How does Aetrix verify that DMNH6012SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6012SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6012SPS-13 meets industry standards.
7.What is the process for return or replacement of DMNH6012SPS-13?
All DMNH6012SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6012SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6012SPS-13 part is unused and in its original packaging.
Return procedure for DMNH6012SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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