My Inquiry
My Account
Diodes Incorporated DMNH6012SPSQ-13
- Part No.:
- DMNH6012SPSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMNH6012SPSQ-13.pdf
- Description:
- MOSFET N-CH 60V 50A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,220
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMNH6012SPSQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 60V VDSS, 11 mΩ RDS(ON) @ 10V VGS, and 50A ID at TC = +25°C. It operates up to +175°C junction temperature and supports automotive DC motor control, solenoid driving, and power-management functions.
For engineers reviewing the DMNH6012SPSQ datasheet, DMNH6012SPSQ pinout, DMNH6012SPSQ application, or DMNH6012SPSQ equivalent, key selection criteria include its 100% unclamped inductive switching rating, low Qg (35.2 nC @ 10V), <1.1 mm profile, AEC-Q101 qualification, and PPAP-capable manufacturing in IATF 16949 facilities.
Technical Context
This MOSFET uses a trench-gate silicon process optimized for high-current, high-temperature automotive switching. Its 3.8°C/W RθJC enables efficient heat transfer to the PCB copper plane, and its 100% UIS-tested ruggedness ensures reliability under inductive load transients common in solenoid and motor drive circuits.
The device features a gate threshold voltage of 2–4 V, enabling robust turn-on with standard 3.3 V or 5 V logic-level drivers, and exhibits normalized RDS(ON) variation ≤2.4× across –55°C to +175°C, supporting stable conduction in extreme ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage before avalanche onset; suitable for 48 V automotive systems with margin. |
| RDS(ON) | 11 mΩ @ VGS = 10 V - Low conduction loss at full rated current; reduces I²R heating in continuous 50 A operation. |
| ID (TC = 25°C) | 50 A - Continuous drain current rating under ideal heatsinking; validated on 2 oz copper FR-4 with thermal bias plate. |
| Qg | 35.2 nC @ VGS = 10 V - Total gate charge determining driver strength requirement; enables fast switching with low drive power. |
| TJ Range | –55°C to +175°C - Extended junction temperature range enabling placement near hot engine compartments or power stages. |
| EAS | 100 mJ - Avalanche energy rating at L = 0.1 mH; supports reliable operation during inductive turn-off without external snubbers. |
| RθJC | 3.8°C/W - Junction-to-case thermal resistance; allows direct thermal path to heatsink or copper pour for high-power density layout. |
Pinout & Package
Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin molded plastic package with 1.00 mm nominal height, UL 94V-0 rated, and matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-side current path; internally connected to 4 parallel drain pads for low-inductance, high-current routing. |
| 2 (S) | Source | Power return node; tied to internal source metal and exposed thermal pad for low-resistance ground path. |
| 3 (D) | Drain | Second drain connection; shares same internal node as Pin 1 for current sharing and thermal spreading. |
| 4 (G) | Gate | Control input; low 2.0 Ω gate resistance minimizes ringing and simplifies driver design. |
| 5 (D) | Drain | Third drain connection; contributes to total 50 A current handling and thermal dissipation. |
| 6 (D) | Drain | Fourth drain connection; completes quad-drain configuration for uniform current distribution. |
| 7 (S) | Source | Secondary source terminal; electrically identical to Pin 2, enhancing solder joint reliability and current capacity. |
| 8 (S) | Source | Third source terminal; provides redundant low-impedance return path and improves thermal coupling to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, traceable lot data, and IATF 16949 manufacturing. |
| 100% unclamped inductive switching (UIS) | Guaranteed avalanche robustness without external protection components in motor/solenoid flyback events. |
| Low RDS(ON) and Qg | 11 mΩ and 35.2 nC enable high-efficiency, high-frequency switching with minimal conduction and gate drive losses. |
| Thermally enhanced PowerDI5060-8 | 3.8°C/W RθJC and 0.097 g mass support compact, high-power-density PCB layouts in space-constrained modules. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets global environmental compliance mandates. |
Applications
| Automotive DC Motor Control | Solenoid Driver Module |
|---|---|
Use Scenario: Bidirectional 48 V brushed DC motor control in HVAC actuators and seat adjusters. IC Role / Device Role / Timing Role: High-side or low-side power switch managing PWM-driven motor current up to 50 A peak. Use Value: 11 mΩ RDS(ON) limits conduction loss to <2.75 W at 50 A, reducing thermal stress and enabling smaller heatsinks. | Use Scenario: 12 V/24 V fuel injector or transmission solenoid actuation in engine control units. IC Role / Device Role / Timing Role: Fast-switching, high-current driver delivering precise pulse-width-controlled coil energization. Use Value: 100 mJ EAS withstands repetitive inductive kickback without degradation, eliminating need for discrete TVS clamps. |
| Automotive Power Distribution Unit | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Solid-state relay replacement in 48 V battery disconnect and load management circuits. IC Role / Device Role / Timing Role: Load switch controlling high-current auxiliary loads (e.g., lighting, pumps) with overcurrent and thermal protection. Use Value: +175°C TJ rating ensures stable operation adjacent to power converters and battery interfaces in under-hood environments. | Use Scenario: Secondary-side synchronous rectification or auxiliary DC-DC converter switch in EV OBC modules. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch in isolated 12 V auxiliary supply rails. Use Value: Low Qg (35.2 nC) enables clean 200–500 kHz switching with minimal gate drive loss, improving overall OBC efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 2.2 mΩ @ 10 V, TO-263-7 package, higher RDS(ON) derating above 100°C | Larger footprint, higher thermal mass; suited for lower-frequency, higher-current industrial inverters | Select when board space permits larger package and ultra-low RDS(ON) at 25°C is prioritized over thermal cycling robustness. |
| IPB180N06S4-02 | 60 V, 1.8 mΩ @ 10 V, TO-263-7, AEC-Q101 qualified but no published UIS rating | Higher peak current capability (180 A), but lacks documented 100% UIS validation for solenoid flyback | Prefer for high-current DC link switching where avalanche stress is mitigated by system-level clamping. |
Compared with STL220N6F7 and IPB180N06S4-02, DMNH6012SPSQ offers superior thermal cycling resilience due to its PowerDI5060-8's lower mass and matched CTE to PCB, tighter RDS(ON) stability over temperature, and verified UIS performance critical for unclamped inductive loads.
Availability
DMNH6012SPSQ is available at Aetrix Electronics and suitable for automotive DC motor controls, solenoid driving, and power-distribution units requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMNH6012SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The PowerMOS™ product line delivers high-reliability, AEC-Q101-qualified discrete MOSFETs engineered specifically for automotive powertrain, body electronics, and ADAS subsystems demanding robustness, thermal stability, and PPAP readiness.
FAQ
What is the maximum pulsed drain current rating for DMNH6012SPSQ?
The DMNH6012SPSQ supports 120 A pulsed drain current (IDM) with 380 µs pulse width and 1% duty cycle, validated under transient thermal conditions. This rating assumes proper PCB thermal design per the datasheet's 2 oz copper layout with thermal bias plate, and is not sustainable in continuous operation due to junction temperature limits.
Does DMNH6012SPSQ require a gate resistor for automotive PWM applications?
A gate resistor is recommended to dampen ringing and control dV/dt, especially at high switching frequencies (>100 kHz). With a measured gate resistance of 2.0 Ω and typical gate charge of 35.2 nC, a 5–10 Ω series resistor balances switching speed and EMI suppression while maintaining driver compatibility with standard automotive microcontrollers.
How does the PowerDI5060-8 package improve thermal performance versus SO-8?
The PowerDI5060-8 features an exposed thermal pad and four drain terminals that reduce RθJA to 49°C/W (vs. ~65°C/W for SO-8) and RθJC to 3.8°C/W (vs. ~5.5°C/W). Its low 1.00 mm profile also enhances airflow and reduces mechanical stress during thermal cycling, making it more reliable than SO-8 in under-hood automotive environments.
Is DMNH6012SPSQ compatible with lead-free reflow profiles?
Yes - DMNH6012SPSQ uses matte tin-annealed terminals and complies with J-STD-020 moisture sensitivity level 1, supporting standard Pb-free reflow profiles up to 260°C peak temperature. The "Green" molding compound is halogen- and antimony-free, meeting JEDEC standards for high-reliability automotive assembly without voiding warranty or reliability qualifications.
DMNH6012SPSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1926 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMNH6012SPSQ-13 FAQ
1.How can I place an order for DMNH6012SPSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6012SPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6012SPSQ-13 reliable?
The price and inventory of DMNH6012SPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6012SPSQ-13 is usually 5 days.
3.What payment methods are accepted for DMNH6012SPSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6012SPSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6012SPSQ-13?
DMNH6012SPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6012SPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6012SPSQ-13?
For technical support, including DMNH6012SPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6012SPSQ-13 requirements.
6.How does Aetrix verify that DMNH6012SPSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6012SPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6012SPSQ-13 meets industry standards.
7.What is the process for return or replacement of DMNH6012SPSQ-13?
All DMNH6012SPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6012SPSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6012SPSQ-13 part is unused and in its original packaging.
Return procedure for DMNH6012SPSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMNH6012SPSQ-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
