Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMNH6021SK3-13

Part No.:
DMNH6021SK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMNH6021SK3-13.pdf
Description:
MOSFET N-CH 60V 50A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,433

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMNH6021SK3-13 from Diodes Incorporated is a 60V, 50A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 23 mΩ RDS(ON) at VGS = 10 V and rated for continuous operation up to +175°C junction temperature. It delivers low conduction loss and fast switching (tF = 5.4 ns, Qg = 20.1 nC), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the DMNH6021SK3-13 datasheet, DMNH6021SK3-13 pinout, DMNH6021SK3-13 application, or DMNH6021SK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, 100% UIS-tested ruggedness, thermal resistance RθJC = 1.8°C/W, and dual gate-drive compatibility (VGS(TH) = 1–3 V, VGSS = ±20 V).

Technical Context

This MOSFET employs planar trench-gate technology optimized for low RDS(ON) while preserving fast turn-off (tD(OFF) = 14.2 ns) and low Crss (69 pF), enabling high-frequency synchronous rectification and PWM motor control. Its body diode exhibits tRR = 21.2 ns and QRR = 15.2 nC under 100 A/μs di/dt, supporting efficient freewheeling in inductive loads.

The device's thermal design centers on the exposed drain pad - thermally coupled to PCB copper - delivering RθJC = 1.8°C/W and enabling 3.7 W power dissipation with proper board layout. Its +175°C rating and -55°C to +175°C operating range support under-hood automotive and industrial power stages where ambient temperatures exceed 125°C.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands 60 V drain-source blocking voltage before avalanche, suitable for 48 V bus systems with margin.
RDS(ON) @ VGS = 10 V 23 mΩ max - Enables ≤1.15 W conduction loss at 50 A, reducing heatsink requirements in high-current switches.
RDS(ON) @ VGS = 4.5 V 28 mΩ max - Supports logic-level gate drive from 3.3 V/5 V microcontrollers without level-shifting circuitry.
Qg (10 V) 20.1 nC - Determines gate driver current demand; enables <1 μs switching transitions with 20 mA average drive.
tF 5.4 ns - Limits switching losses during turn-off, critical for >500 kHz SMPS and Class-D audio amplifiers.
EAS 64 mJ - Specifies single-pulse avalanche energy handling, allowing safe operation during inductive load transients.
RθJC 1.8°C/W - Confirms efficient heat transfer from junction to PCB copper pad, enabling compact thermal design.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound (UL 94V-0), matte tin-plated copper leadframe.

Pin/Terminal Circuit Role Design Meaning
D (Drain) Main current path output / Heat sink interface Connected to exposed copper pad; carries full load current and serves as primary thermal conduction path to PCB.
G (Gate) Control input for channel modulation High-impedance terminal requiring low-inductance routing; threshold voltage 1–3 V enables direct MCU interfacing.
S (Source) Reference node for gate drive and current return Provides common reference for gate-source bias; must be low-impedance to minimize noise coupling and switching instability.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including HTOL, TC, HTRB, and UIS testing - supports under-hood deployment.
100% UIS tested Each unit passes unclamped inductive switching stress (IAS = 35 A, EAS = 64 mJ), ensuring robustness in motor and solenoid drive.
+175°C continuous operation Junction temperature rating allows sustained use in high-ambient environments (e.g., engine control units, industrial inverters).
Low Crss (69 pF) Minimizes Miller effect, improving gate drive efficiency and enabling stable high-speed switching without oscillation.
Halogen- and antimony-free Meets "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb); compliant with environmental directives for global OEM supply chains.

Applications

Automotive Engine Control Unit (ECU) Industrial DC Motor Drive

Use Scenario: High-side switch for fuel injector drivers in 12 V/48 V hybrid powertrains.

IC Role / Device Role / Timing Role: Power switch controlling pulsed solenoid actuation with 1–2 ms ON time and 10 kHz PWM capability.

Use Value: Low RDS(ON) minimizes injector coil heating; AEC-Q101 qualification ensures long-term reliability across thermal cycles.

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for factory automation.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 45 A peak with fast freewheeling via integrated body diode.

Use Value: Fast tF and low QRR reduce switching losses by >15% vs. legacy MOSFETs at 20 kHz PWM frequency.

Server PSU Synchronous Rectifier Power over Ethernet (PoE) PSE Switch

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V/50 A output LLC resonant converter.

IC Role / Device Role / Timing Role: Voltage-controlled switch replacing Schottky diode to improve efficiency above 200 kHz switching.

Use Value: 23 mΩ RDS(ON) cuts conduction loss by ~60% versus 40 V Schottky, increasing full-load efficiency from 93.2% to 94.8%.

Use Scenario: Power-switching FET in IEEE 802.3bt Type 4 (90 W) PSE controller for smart building infrastructure.

IC Role / Device Role / Timing Role: Current-limiting and fault-isolation switch protecting PoE port during cable short or overload events.

Use Value: 100% UIS rating and 64 mJ EAS withstand repeated 100 V inductive surges from cable disconnect transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMNH6021SK3Q Identical die and RDS(ON), but fully AEC-Q101 certified with extended test reporting and automotive traceability. Required for production automotive ECUs; not necessary for industrial or consumer designs. Select when automotive PPAP documentation, lot traceability, and zero-defect screening are mandatory.
IPB027N06L3 Lower RDS(ON) (2.7 mΩ), higher Qg (54 nC), TO263 package, no AEC-Q101 rating. Better conduction efficiency at <10 A, but unsuitable for automotive or high-temp industrial use. Prefer for high-efficiency, low-frequency (<100 kHz), non-automotive power supplies where thermal margin is abundant.

Compared with DMNH6021SK3-13, the DMNH6021SK3Q adds automotive compliance overhead without performance gain, while IPB027N06L3 trades ruggedness and temperature capability for lower RDS(ON) - making the original optimal for balanced high-temp, high-reliability 48 V power switching.

Availability

DMNH6021SK3-13 is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, and server power supply designs requiring stable component supply, extended temperature operation, and AEC-Q101-aligned quality assurance.

Supply support for DMNH6021SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive-Qualified PowerMOS™ family, engineered specifically for high-temperature, high-ruggedness power switching in safety-critical and mission-critical systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH6021SK3-13 supports 35 A continuous drain current at TC = +100°C, per the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by junction-to-case resistance (1.8°C/W) and safe operating area constraints under sustained conduction.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes - a 4.7 Ω gate resistor is used in the datasheet's switching time test conditions (tD(ON), tR). This value damps ringing caused by gate loop inductance and Crss feedback; omitting it risks oscillation and gate overvoltage exceeding ±20 V rating.

Can the body diode be used for continuous freewheeling in a buck converter?

Yes - the body diode is rated for 40 A continuous forward current (IS) and exhibits VSD = 0.75–1.2 V at 20 A. However, its reverse recovery charge (QRR = 15.2 nC) and time (tRR = 21.2 ns) must be accounted for in synchronous rectifier timing to avoid shoot-through.

Is the TO252 package lead (pin 2) electrically connected to the drain?

Yes - in the TO252 (DPAK) package, the center pin (G) is isolated; the left and right pins (S and D) plus the large exposed copper pad beneath the package are all internally connected to the drain terminal. The datasheet pinout diagram confirms D–S–D configuration with drain on both outer leads and the pad.

DMNH6021SK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20.1 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1143 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMNH6021SK3-13 FAQ

1.How can I place an order for DMNH6021SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6021SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6021SK3-13 reliable?

The price and inventory of DMNH6021SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6021SK3-13 is usually 5 days.

3.What payment methods are accepted for DMNH6021SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6021SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6021SK3-13?

DMNH6021SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6021SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6021SK3-13?

For technical support, including DMNH6021SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6021SK3-13 requirements.

6.How does Aetrix verify that DMNH6021SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6021SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6021SK3-13 meets industry standards.

7.What is the process for return or replacement of DMNH6021SK3-13?

All DMNH6021SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6021SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6021SK3-13 part is unused and in its original packaging.

Return procedure for DMNH6021SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6021SK3-13 Tags

  • DMNH6021SK3-13
  • DMNH6021SK3-13 PDF
  • DMNH6021SK3-13 Datasheet
  • DMNH6021SK3-13 Specifications
  • DMNH6021SK3-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMNH6021SK3-13
  • Buy DMNH6021SK3-13
  • DMNH6021SK3-13 Price
  • DMNH6021SK3-13 Distributor
  • DMNH6021SK3-13 Supplier
  • DMNH6021SK3-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER