Diodes Incorporated DMNH6021SK3Q-13

Overview

DMNH6021SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 60V V_DSS, 23 mΩ R_DS(ON) @ 10V V_GS, and 50A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and is designed for automotive power management, solenoid driving, and motor control circuits requiring high reliability under harsh thermal conditions.

For engineers reviewing the DMNH6021SK3Q-13 datasheet, DMNH6021SK3Q-13 pinout, DMNH6021SK3Q-13 application, or DMNH6021SK3Q-13 equivalent, key selection criteria include its 1.8°C/W R_θJC, 100% production-tested UIS capability, low gate charge (20.1 nC @ 10V), and AEC-Q101 qualification with PPAP support - all critical for automotive-grade power switching validation.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (1–3 V) ensures robust turn-on with standard 4.5V or 10V logic-level drivers, while the integrated body diode supports freewheeling in inductive loads like solenoids and brushed DC motors.

The device's thermal design centers on the exposed drain pad in TO252 packaging, enabling direct thermal coupling to PCB copper planes. With R_θJC = 1.8°C/W and R_θJA = 40°C/W (2 oz copper, thermal bias), it sustains high pulsed currents (I_DM = 80 A) and avalanche energy (E_AS = 64 mJ) without derating in compact layouts.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG and IXTP50N065T, the DMNH6021SK3Q-13 uniquely balances automotive qualification, TO252 thermal performance (1.8°C/W), and moderate gate charge (20.1 nC) for cost-sensitive, space-limited solenoid and auxiliary motor control where full AEC-Q101 traceability is mandatory.

Availability

DMNH6021SK3Q-13 is available at Aetrix Electronics and suitable for automotive power distribution, solenoid actuation, and brushed DC motor control requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for DMNH6021SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

The DMNH6021SK3Q-13 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching applications demanding extended temperature operation, avalanche ruggedness, and PPAP-ready documentation.

FAQ

What is the maximum allowable gate-source voltage for DMNH6021SK3Q-13?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full enhancement or 4.5 V for logic-level compatibility, both well within the safe margin.

Does DMNH6021SK3Q-13 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is essential to dampen ringing and limit peak gate current. Based on typical driver output impedance and the device's 2.5 Ω internal gate resistance, a 4.7 Ω external resistor is validated in the datasheet for 10 V drive with 4.7 Ω source impedance, yielding controlled 4.4 ns turn-on delay and 6.0 ns rise time.

How is thermal performance affected when mounted on standard FR-4 without thermal vias?

In the minimum-pad-layout configuration (Note 5), R_θJA is 73°C/W, limiting continuous power dissipation to ~2.1 W at ambient. To achieve the 3.7 W rating (R_θJA = 40°C/W), the exposed drain pad must connect to ≥1 inch² of 2 oz copper with thermal vias to inner layers - otherwise, junction temperature will exceed 175°C under 45A load.

Is the body diode suitable for synchronous rectification in DC-DC converters?

No - the body diode has a forward voltage of 0.75–1.2 V at 20 A and reverse recovery time of 21.2 ns, making it unsuitable for high-frequency synchronous rectification. Its primary role is freewheeling in inductive loads; external Schottky or MOSFET-based synchronous rectifiers are required for efficient converter topologies.