Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMNH6021SPDW-13

Part No.:
DMNH6021SPDW-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMNH6021SPDW-13.pdf
Description:
MOSFET 2N-CH 60V 8.2A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,486

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMNH6021SPDW from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated 60V VDSS, 25 mΩ RDS(ON) @ 10V VGS, and 32A ID at TC = +25°C, designed for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMNH6021SPDW datasheet, DMNH6021SPDW pinout, DMNH6021SPDW application, or DMNH6021SPDW equivalent, key selection criteria include its +175°C rated junction temperature, wettable flank terminals for automated optical inspection, and dual-channel layout enabling compact synchronous buck or half-bridge topologies.

Technical Context

This dual MOSFET integrates two matched N-channel devices in a single PowerDI5060-8 thermally enhanced package with exposed drain pads. Its 2.2°C/W RθJC enables high-current operation under constrained thermal conditions, while low Ciss (1143 pF) and fast switching (tR = 6.0 ns, tF = 5.4 ns) support high-frequency PWM control.

The device features 100% unclamped inductive switching (UIS) rated to 35 A IAS and 64 mJ EAS, ensuring robustness against transient energy in power management circuits. Gate threshold voltage (1–3 V) and low Qg (20.1 nC @ 10V) support direct drive from standard logic-level controllers without gate drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Supports input rails up to 48V nominal systems with margin for transients.
RDS(ON) 25 mΩ @ 10V VGS - Enables ≤0.8 W conduction loss at 18A continuous drain current.
ID (TC = 25°C) 32 A - Sustains high output current in compact DC-DC converter power stages.
TJ max +175°C - Allows operation in under-hood automotive or industrial environments without derating.
Qg 20.1 nC @ 10V - Reduces gate drive power and enables efficient 500 kHz–1 MHz switching.
RθJC 2.2°C/W - Permits >20W power dissipation with minimal case-to-heatsink thermal interface resistance.
Ciss 1143 pF - Limits Miller-induced shoot-through risk in synchronous rectification applications.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pads on bottom side and wettable flank terminals for solder joint inspection.

Pin/Terminal Circuit Role Design Meaning
D1 Drain of Channel 1 Primary high-side or low-side current path; electrically tied to exposed drain pad for thermal conduction.
S1 Source of Channel 1 Reference node for Channel 1 gate drive; connects to PCB ground or switch node depending on topology.
G1 Gate of Channel 1 Controls turn-on/turn-off of Channel 1; requires <3V threshold margin for reliable logic-level drive.
D2 Drain of Channel 2 Independent high-current path; enables dual-phase or complementary switching in same footprint.
S2 Source of Channel 2 Isolated source node allowing independent biasing; supports floating gate drive in high-side configurations.
G2 Gate of Channel 2 Separate control input; permits independent timing or dead-time insertion between channels.

Key Features

Feature Design Value
+175°C rated junction temperature Enables deployment in engine control units, LED drivers, and industrial motor drives without thermal throttling.
100% UIS rated (35A/64mJ) Eliminates need for external snubbers in inductive load switching, reducing BOM count and board area.
Wettable flank terminals Supports automated optical inspection (AOI) of solder fillets, improving manufacturing yield and field reliability.
Low RDS(ON) @ 4.5V (40 mΩ) Ensures stable performance with 3.3V or 5V microcontroller GPIOs, avoiding external level-shifting circuitry.
Halogen- and antimony-free "Green" construction Meets IPC-1752A material declaration requirements and EU RoHS 3 (2015/863/EU) compliance out-of-box.

Applications

Automotive LED Headlamp Driver Industrial DC-DC Buck Converter

Use Scenario: High-brightness LED arrays requiring precise current regulation and thermal resilience in under-hood environments.

IC Role / Device Role / Timing Role: Dual-channel MOSFET used as synchronous rectifier and high-side switch in multi-phase buck controller stage.

Use Value: +175°C rating avoids thermal shutdown during peak ambient temperatures; low RDS(ON) minimizes heat generation in sealed headlamp housings.

Use Scenario: 24V-to-5V/12V point-of-load conversion for PLC I/O modules operating in factory-floor enclosures.

IC Role / Device Role / Timing Role: Dual N-channel configured in interleaved buck topology to halve ripple current and reduce output capacitance.

Use Value: Matched channel parameters ensure balanced current sharing; wettable flanks enable AOI verification of solder joints critical for long-life industrial deployments.

Laptop Backlight Inverter USB-C PD Power Path Switch

Use Scenario: Boost-based CCFL or LED backlight driver requiring compact, high-efficiency switching in space-constrained clamshell designs.

IC Role / Device Role / Timing Role: One channel as main boost switch, second as synchronous rectifier to replace Schottky diode and improve efficiency.

Use Value: Low Qg and fast tR/tF allow >1 MHz operation, shrinking magnetics size; 25 mΩ RDS(ON) reduces conduction loss by >40% vs. discrete alternatives.

Use Scenario: Bidirectional 20V/3A USB-C power delivery path where reverse current blocking and low forward drop are mandatory.

IC Role / Device Role / Timing Role: Dual MOSFET used in back-to-back configuration for true bidirectional blocking and low-loss power routing.

Use Value: Matched RDS(ON) ensures symmetrical forward voltage in both directions; 60V rating accommodates 20V PD + safety margin without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMNH6021SPDWQ Automotive-grade variant (AEC-Q101 qualified); identical electrical specs but with extended qualification testing and traceability. Required for automotive infotainment or ADAS subsystems; not needed for commercial/industrial use. Select DMNH6021SPDWQ only when AEC-Q101 certification is mandated by OEM or Tier-1 program requirements.
DMN6021SPD Same die in PowerDI3333-8 package; lower thermal capability (RθJC = 3.5°C/W), no wettable flanks, 20A ID rating. Suitable for cost-sensitive consumer applications with lower power density and relaxed thermal/AOI requirements. Choose DMN6021SPD only if board-level thermal design allows higher junction rise and AOI is not required.

Compared with DMNH6021SPDWQ, the base part lacks AEC-Q101 documentation but offers identical performance at lower cost; versus DMN6021SPD, it delivers 60% higher current capability and superior manufacturability via wettable flanks and lower RθJC.

Availability

DMNH6021SPDW is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and laptop backlight inverters requiring stable component supply across multi-year production cycles.

Supply support for DMNH6021SPDW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, thermally demanding power conversion applications where RDS(ON), switching speed, and ruggedness must co-optimize in compact packages.

FAQ

What is the maximum continuous drain current for each channel at TC = +100°C?

Each channel supports 22 A continuous drain current at TC = +100°C, per the datasheet's "Continuous Drain Current (Note 7)" table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual PCB copper area and airflow in the target layout.

Does DMNH6021SPDW integrate body diodes, and what are their forward voltage characteristics?

Yes, each channel includes an intrinsic body diode with typical VSD of 0.75 V at IS = 2.6 A and VGS = 0 V. The diode exhibits tRR = 21.2 ns and QRR = 15.2 nC under IF = 20 A and di/dt = 100 A/μs, enabling efficient synchronous rectification without external diodes in many buck topologies.

Can this device be used in a high-side switch configuration with standard 5V logic?

Yes - with VGS(TH) ranging from 1 V to 3 V and RDS(ON) = 40 mΩ at VGS = 4.5 V, DMNH6021SPDW is fully compatible with 5V microcontroller GPIOs. However, high-side use requires a gate driver capable of providing VGS ≥ 4.5 V referenced to the source, as bootstrap or charge-pump solutions are needed to exceed the source potential.

What is the significance of the "wettable flank" feature in PowerDI5060-8 packaging?

The wettable flank design exposes vertical sidewalls of the copper leadframe beneath the molded compound, allowing solder to wick up the terminal edge during reflow. This enables automated optical inspection (AOI) to verify full solder fillet formation - a critical reliability requirement for automotive and industrial assemblies where voided joints cause premature field failure.

DMNH6021SPDW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta), 32A(Tc)
Rds On (Max) @ Id, Vgs:
25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1143pF @ 25V
Power - Max:
1.5W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI5060-8 (Type R)

DMNH6021SPDW-13 FAQ

1.How can I place an order for DMNH6021SPDW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6021SPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6021SPDW-13 reliable?

The price and inventory of DMNH6021SPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6021SPDW-13 is usually 5 days.

3.What payment methods are accepted for DMNH6021SPDW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6021SPDW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6021SPDW-13?

DMNH6021SPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6021SPDW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6021SPDW-13?

For technical support, including DMNH6021SPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6021SPDW-13 requirements.

6.How does Aetrix verify that DMNH6021SPDW-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6021SPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6021SPDW-13 meets industry standards.

7.What is the process for return or replacement of DMNH6021SPDW-13?

All DMNH6021SPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6021SPDW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6021SPDW-13 part is unused and in its original packaging.

Return procedure for DMNH6021SPDW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6021SPDW-13 Tags

  • DMNH6021SPDW-13
  • DMNH6021SPDW-13 PDF
  • DMNH6021SPDW-13 Datasheet
  • DMNH6021SPDW-13 Specifications
  • DMNH6021SPDW-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMNH6021SPDW-13
  • Buy DMNH6021SPDW-13
  • DMNH6021SPDW-13 Price
  • DMNH6021SPDW-13 Distributor
  • DMNH6021SPDW-13 Supplier
  • DMNH6021SPDW-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER