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Diodes Incorporated DMNH6021SPS-13
- Part No.:
- DMNH6021SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMNH6021SPS-13.pdf
- Description:
- MOSFET N-CH 60V 55A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,413
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Product details
Overview
DMNH6021SPS from Diodes Incorporated is a 60V, 55A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with RDS(ON) = 23 mΩ @ VGS = 10 V and 28 mΩ @ VGS = 4.5 V, designed for high-efficiency power switching in solenoid and relay drive circuits.
For engineers reviewing the DMNH6021SPS datasheet, DMNH6021SPS pinout, DMNH6021SPS application, or DMNH6021SPS equivalent, this device supports high-temperature industrial power management where low conduction loss, robust unclamped inductive switching (IAS = 35 A), and fast turn-off (tF = 15.3 ns) are critical selection criteria.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and low gate charge (Qg = 19.7 nC @ VGS = 10 V), enabling high-frequency switching in DC-DC converters and load-switching applications. Its 100% unclamped inductive switching rating ensures reliability under reactive load transients.
The device integrates a low-VSD body diode (0.75–1.2 V @ IS = 20 A) with tRR = 20.8 ns and QRR = 13.9 nC, supporting synchronous rectification and freewheeling in half-bridge topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage; suitable for 48 V system rails with margin. |
| RDS(ON) | 23 mΩ @ VGS = 10 V - Enables ≤1.3 W conduction loss at 55 A, critical for thermal management in compact layouts. |
| ID (TC = +25°C) | 55 A - Continuous drain current rating when mounted on thermally optimized PCB with exposed drain pad. |
| RθJC | 1.5 °C/W - Low junction-to-case thermal resistance enables direct heatsinking via the exposed drain pad. |
| Qg | 19.7 nC @ VGS = 10 V - Gate drive energy requirement determines driver sizing and switching loss in PWM operation. |
| tF | 15.3 ns - Fast fall time reduces switching transition losses and EMI generation in high-frequency power stages. |
| EAS | 64 mJ - Avalanche energy rating supports reliable operation during inductive load turn-off without snubber networks. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2, 4, 6, 8 connected to drain), molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; electrically tied to internal source metallization and substrate ground reference. |
| 2 | Drain | High-current power output node; connected to exposed copper pad for thermal and electrical conduction. |
| 3 | Gate | Control input requiring <10 V threshold (VGS(TH) = 1–3 V); low Ciss = 1016 pF eases drive design. |
| 4 | Drain | Parallel drain connection enhancing current capacity and thermal spreading across package footprint. |
| 5 | Source | Secondary source terminal reducing bond-wire inductance and improving high-frequency stability. |
| 6 | Drain | Third drain terminal reinforcing thermal path and minimizing RDS(ON) contribution from interconnect resistance. |
| 7 | Gate | Duplicate gate connection lowering gate loop inductance and improving switching consistency. |
| 8 | Drain | Fourth drain terminal completing symmetric drain layout for uniform current distribution and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C maximum junction temperature | Enables deployment in engine bay, industrial motor controls, and other high-ambient environments without derating. |
| 100% unclamped inductive switching (UIS) tested | Validated avalanche ruggedness (IAS = 35 A, EAS = 64 mJ) eliminates need for external clamping components. |
| Low RDS(ON) at 4.5 V gate drive | 28 mΩ @ VGS = 4.5 V supports logic-level gate drivers and 5 V microcontroller interfaces directly. |
| Low Qgd/Qg ratio (4.8/19.7 nC) | Reduces Miller-induced switching instability and improves hard-switching robustness in high-dV/dt applications. |
| RoHS-compliant, halogen- and antimony-free | Meets EU RoHS 3 (2015/863/EU) and automotive environmental requirements without compromising thermal performance. |
Applications
| Automotive Engine Control Modules | Industrial PLC Output Stages |
|---|---|
|
Use Scenario: Driving fuel injector solenoids in 12 V/24 V engine management systems with pulse widths down to 100 µs. IC Role / Device Role / Timing Role: High-side or low-side switch controlling peak currents up to 48 A with tON < 18 ns and tOFF < 43 ns. Use Value: 23 mΩ RDS(ON) minimizes coil heating and extends solenoid lifetime; +175°C rating ensures reliability near exhaust manifolds. |
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output modules. IC Role / Device Role / Timing Role: Load switch handling 30 A resistive/inductive loads with integrated body diode freewheeling. Use Value: 64 mJ EAS withstands relay-coil energy without failure; 28 mΩ @ 4.5 V allows direct MCU GPIO control. |
| Server PSU OR-ing Circuits | Medical Infusion Pump Drivers |
|
Use Scenario: Hot-swap OR-ing diode replacement in redundant 48 V server power supplies operating at 200 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier with body diode reverse recovery tRR = 20.8 ns and QRR = 13.9 nC. Use Value: Low Qg (19.7 nC) and fast tF (15.3 ns) reduce switching losses by >35% vs. legacy MOSFETs in high-density PSU designs. |
Use Scenario: Precision current-controlled motor and valve actuation in battery-powered infusion pumps requiring silent, jitter-free flow control. IC Role / Device Role / Timing Role: PWM-driven power stage delivering 2–5 A at 1–5 kHz with minimal audible noise and thermal drift. Use Value: Stable RDS(ON) over -55°C to +175°C ensures dose accuracy across clinical environments; RoHS/Green compliance meets IEC 60601-1. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6021SPSQ | Automotive-grade variant (AEC-Q101 qualified), identical RDS(ON), same PowerDI5060-8 package, but with extended qualification testing and traceability. | Required for automotive production; not necessary for industrial or medical non-safety-critical use. | Select DMN6021SPSQ only when AEC-Q101 compliance is mandated by OEM or Tier-1 specification. |
| IPB60R037P7 | 600 V, 37 mΩ SiC MOSFET in TO-263 package; higher voltage rating, wider VGS range (−10/+20 V), but higher gate charge (Qg = 42 nC). | Suitable for 400 V bus applications; over-specified for 48 V/60 V systems where cost and drive complexity matter. | Choose IPB60R037P7 only if system requires >100 V blocking or benefits from SiC's high-temperature switching efficiency. |
Compared with DMNH6021SPS, DMN6021SPSQ adds automotive qualification without altering electrical specs, while IPB60R037P7 trades lower RDS(ON) and higher voltage capability for increased gate drive demand and cost-making DMNH6021SPS optimal for cost-sensitive, thermally constrained 48–60 V industrial switching.
Availability
DMNH6021SPS is available at Aetrix Electronics and suitable for automotive engine control, industrial PLC output stages, server PSU OR-ing circuits, and medical infusion pump drivers requiring stable component supply and long-term manufacturability.
Supply support for DMNH6021SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-reliability, high-temperature power switching in automotive, industrial, and computing applications where thermal resilience and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current at +100°C case temperature?
The DMNH6021SPS supports 39 A continuous drain current at TC = +100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package and must be validated using actual board-level thermal measurements under worst-case ambient conditions.
Does this MOSFET require a gate resistor for safe operation?
A gate resistor is recommended to control dV/dt and suppress ringing, especially in high-speed switching. With Qg = 19.7 nC and typical driver output impedance, a 4.7 Ω resistor achieves tD(OFF) = 27.5 ns and tF = 15.3 ns per datasheet test conditions-values confirmed in Figure 13 timing waveforms.
Can DMNH6021SPS replace a standard TO-252 DPAK MOSFET in existing layouts?
No-PowerDI5060-8 has different pad dimensions, pin count (8 vs. 3), and thermal pad configuration than TO-252. Direct replacement requires PCB redesign to accommodate the 5.15 mm × 6.15 mm footprint, dual-row pin arrangement, and exposed drain pad solder stencil profile per Diodes' suggested layout (Document DS37685, Page 8).
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes-the body diode is rated for 55 A continuous forward current (IS) and exhibits tRR = 20.8 ns with QRR = 13.9 nC at IF = 20 A, making it viable for low-duty-cycle freewheeling. However, for high-frequency synchronous rectification, external Schottky diodes may still be preferred to minimize conduction loss.
DMNH6021SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1016 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 53W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMNH6021SPS-13 FAQ
1.How can I place an order for DMNH6021SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6021SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6021SPS-13 reliable?
The price and inventory of DMNH6021SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6021SPS-13 is usually 5 days.
3.What payment methods are accepted for DMNH6021SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6021SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6021SPS-13?
DMNH6021SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6021SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6021SPS-13?
For technical support, including DMNH6021SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6021SPS-13 requirements.
6.How does Aetrix verify that DMNH6021SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6021SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6021SPS-13 meets industry standards.
7.What is the process for return or replacement of DMNH6021SPS-13?
All DMNH6021SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6021SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6021SPS-13 part is unused and in its original packaging.
Return procedure for DMNH6021SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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