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Diodes Incorporated DMNH6021SPSQ-13

Part No.:
DMNH6021SPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMNH6021SPSQ-13.pdf
Description:
MOSFET N-CH 60V 55A PWRDI5060-8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,736

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Product details

Overview

DMNH6021SPSQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 60V VDSS, 23mΩ RDS(ON) @ 10V VGS, and 55A ID at TC = +25°C. It serves as a high-reliability power switch in automotive solenoid and relay drivers, operating up to +175°C junction temperature with 100% unclamped inductive switching capability.

For engineers reviewing the DMNH6021SPSQ-13 datasheet, DMNH6021SPSQ-13 pinout, DMNH6021SPSQ-13 application, or DMNH6021SPSQ-13 equivalent, key selection criteria include its 28mΩ RDS(ON) @ 4.5V VGS, 1.5°C/W RθJC, 19.7nC total gate charge at 10V, and PPAP-capable automotive qualification-critical for under-hood power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its 100% UIS-rated ruggedness supports repetitive inductive load switching without derating, while the integrated body diode exhibits 20.8ns tRR and 13.9nC QRR at 20A/100A/μs.

The device features a gate threshold voltage of 1–3V (VGS(TH)) and exhibits minimal on-resistance drift over temperature: RDS(ON) increases only ~1.8× from 25°C to 175°C at VGS = 10V, enabling stable current handling across extreme ambient conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Withstands transient spikes up to 60V in 12V/24V automotive systems without breakdown.
RDS(ON) @ 10V 23mΩ - Delivers ≤1.3W conduction loss at 55A, reducing thermal stress in high-current solenoid drive.
RDS(ON) @ 4.5V 28mΩ - Ensures robust turn-on with standard 5V logic-level gate drivers in engine control units.
ID (TC = 25°C) 55A - Supports continuous high-side or low-side switching of 50W+ loads (e.g., fuel injectors, HVAC actuators).
EAS 64mJ - Absorbs energy from inductive kickback in relay coils without failure, eliminating need for external snubbers.
RθJC 1.5°C/W - Enables efficient heat transfer to PCB copper pour or heatsink, supporting >40W power dissipation at TJ = 175°C.
Qg @ 10V 19.7nC - Minimizes gate drive power and switching time (tD(ON) = 4.2ns), reducing dynamic losses in PWM applications.

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low RθJC; UL 94V-0 molded green compound; moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (S) Source Low-side return path; tied to PCB ground plane for optimal EMI control and thermal conduction.
2 (D) Drain Main power output node; connected to exposed copper pad for direct thermal coupling to heatsink or PCB copper pour.
3 (D) Drain Parallel drain connection to reduce current density and improve current sharing in high-power routing.
4 (G) Gate Control input; requires <100nA leakage current compliance and 2.5Ω gate resistance for stable Miller-effect immunity.
5 (D) Drain Third drain terminal enhancing thermal and electrical current-handling capacity in high-current paths.
6 (D) Drain Fourth drain terminal providing redundant current path and improved thermal spreading across package base.
7 (S) Source Secondary source connection for balanced current distribution and reduced parasitic inductance in high-di/dt circuits.
8 (S) Source Third source terminal ensuring low-impedance return path and minimizing common-source inductance in multi-phase drives.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect reliability testing.
100% Unclamped Inductive Switching (UIS) Guarantees survival under worst-case inductive turn-off events (e.g., relay coil de-energization) without external protection.
+175°C maximum junction temperature Enables placement near hot engine components (e.g., exhaust manifolds, turbochargers) without thermal derating.
Low RDS(ON) @ 4.5V (28mΩ) Permits direct interface with 5V microcontrollers and ASICs without level-shifting or gate driver ICs.
Green, halogen-free, RoHS-compliant Meets EU Directive 2015/863/EU with <900ppm Br, <900ppm Cl, <1000ppm Sb-ensuring environmental compliance in global supply chains.

Applications

Engine Control Module (ECM) Fuel Injector Driver

Use Scenario: High-speed switching of 12V solenoid valves controlling air/fuel mixture in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch with 4.2ns turn-on delay and 15.3ns fall time, synchronized to crankshaft position sensor timing.

Use Value: 28mΩ RDS(ON) @ 4.5V enables direct MCU GPIO drive, reducing BOM count and PCB area versus discrete driver + MOSFET solutions.

Use Scenario: Driving high-current (15–25A) fuel injectors in turbocharged engines where ambient temperatures exceed 125°C.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive 100A/μs di/dt transients during injector pulse-width modulation.

Use Value: 64mJ EAS rating eliminates need for external flyback diodes, simplifying layout and improving system-level fault tolerance.

Transmission Control Unit (TCU) Electric Power Steering (EPS)

Use Scenario: Controlling hydraulic solenoids in 8-speed automatic transmissions subjected to vibration and thermal cycling.

IC Role / Device Role / Timing Role: Robust high-side or low-side switch with 100% UIS qualification, supporting 100,000+ cycle life under mechanical shock.

Use Value: 1.5°C/W RθJC allows direct mounting to aluminum housing, enabling passive cooling without dedicated heatsinks.

Use Scenario: Managing motor phase current in brushless EPS assist motors operating continuously at 150°C under hood.

IC Role / Device Role / Timing Role: High-efficiency power stage component with 23mΩ RDS(ON) @ 10V, minimizing conduction loss in 48V auxiliary power domains.

Use Value: +175°C rating ensures uninterrupted operation during peak-load thermal transients, meeting ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6LF8AG 60V, 2.2mΩ @ 10V, 220A ID, PowerFLAT 5x6 package, lower RDS(ON) but higher Qg (55nC) Targeted at high-current traction inverters; oversized for solenoid/relay loads Select when >100A peak current and ultra-low conduction loss dominate over gate drive complexity.
IXTP50N10P 100V, 22mΩ @ 10V, TO-220 package, non-AEC-Q101, RθJA = 62°C/W (no exposed pad) Industrial-grade only; lacks PPAP support and high-temp qualification Acceptable for non-automotive prototypes or cost-sensitive industrial controls where AEC-Q101 is not mandated.

Compared with STL220N6LF8AG and IXTP50N10P, the DMNH6021SPSQ-13 uniquely balances AEC-Q101 compliance, 4.5V logic-level drive, 1.5°C/W thermal resistance, and 64mJ avalanche energy-making it optimal for space-constrained, thermally aggressive automotive power switches below 60A.

Availability

DMNH6021SPSQ-13 is available at Aetrix Electronics and suitable for automotive engine control modules, transmission solenoid drivers, electric power steering subsystems, and body electronics requiring stable component supply across extended product lifecycles.

Supply support for DMNH6021SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for automotive, industrial, and computing markets.

The DMNH6021SPSQ-13 belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for under-hood switching applications demanding AEC-Q101 qualification, +175°C operation, and ruggedized UIS performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH6021SPSQ-13 supports 39A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package's 1.5°C/W RθJC and ensures safe operation in high-ambient automotive environments such as engine bays.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes-a 4.7Ω gate resistor is used in the datasheet's switching time test conditions (tD(ON), tR, etc.) to dampen ringing and limit di/dt. This value balances switching speed against conducted EMI; values below 2.2Ω increase radiated emissions risk in CAN-bus adjacent layouts.

Can the DMNH6021SPSQ-13 replace older DMP6021SN in existing designs?

Yes-the DMNH6021SPSQ-13 is a direct drop-in replacement for DMP6021SN with identical PowerDI5060-8 footprint, pinout, and RDS(ON) specs. It adds AEC-Q101 qualification, PPAP support, and improved UIS ruggedness, making it suitable for new automotive designs without layout changes.

What is the body diode reverse recovery charge (QRR) and why does it matter in relay driving?

The body diode QRR is 13.9nC at 20A/100A/μs. In relay driving, low QRR minimizes reverse recovery current spikes during turn-off, reducing electromagnetic interference and preventing unintended gate triggering in adjacent MOSFETs sharing the same ground plane.

DMNH6021SPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1016 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta), 53W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMNH6021SPSQ-13 FAQ

1.How can I place an order for DMNH6021SPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6021SPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6021SPSQ-13 reliable?

The price and inventory of DMNH6021SPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6021SPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMNH6021SPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6021SPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6021SPSQ-13?

DMNH6021SPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6021SPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6021SPSQ-13?

For technical support, including DMNH6021SPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6021SPSQ-13 requirements.

6.How does Aetrix verify that DMNH6021SPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6021SPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6021SPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMNH6021SPSQ-13?

All DMNH6021SPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6021SPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6021SPSQ-13 part is unused and in its original packaging.

Return procedure for DMNH6021SPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6021SPSQ-13 Tags

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