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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMNH6021SPSW-13

Name: DMNH6021SPSW-13
Brand: Diodes Incorporated
SKU: DMNH6021SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMNH6021SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMNH6021SPSW-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI506

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Product details

Overview

DMNH6021SPSW from Diodes Incorporated is a 60V, 44A N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, featuring 23 mΩ R_DS(ON) at V_GS = 10 V, 175°C maximum junction temperature, and wettable flank terminals for automated optical inspection. It serves as a high-current, high-temperature power switch in DC-DC converter primary-side and backlight LED driver circuits.

For engineers reviewing the DMNH6021SPSW datasheet, DMNH6021SPSW pinout, DMNH6021SPSW application, or DMNH6021SPSW equivalent, this page delivers verified electrical specs, thermal performance data, validated pin configuration, and real-world use cases for automotive-grade power management design.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 4.4 ns, t_D(OFF) = 14.2 ns) and low gate charge (Q_g = 20.1 nC at V_GS = 10 V). Its 100% production-tested UIS capability supports robust operation under inductive load transients.

The device integrates a low-V_SD body diode (0.75 V typ. at 20 A), optimized for synchronous rectification and freewheeling in buck and boost topologies. Thermal resistance R_θJC = 1.5°C/W enables high-power dissipation when mounted on an exposed drain pad with proper copper thermal bias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source voltage before avalanche conduction begins.
R_DS(ON)	23 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 44 A continuous current (TC = 25°C).
I_D Max	44 A @ T_C = 25°C - Sustains high pulsed/continuous current when heatsinked to case.
T_J Max	+175°C - Rated for operation in under-hood automotive and industrial environments without derating.
Q_g	20.1 nC @ V_GS = 10 V - Determines gate drive power requirement and switching speed in hard-switched converters.
E_AS	64 mJ - Energy-handling capacity during unclamped inductive switching events, critical for reliability in flyback and motor drive circuits.
C_iss	1132 pF - Input capacitance affecting gate drive loop stability and Miller effect in high-frequency PWM designs.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Main current return path; tied to ground or low-side reference in half-bridge configurations.
2 (D)	Drain	High-side power input node; connected to PCB copper pour for thermal conduction and current handling.
3 (D)	Drain	Parallel drain connection; shares current path and thermal interface with Pin 2.
4 (G)	Gate	Control terminal requiring 10 V for full enhancement; low C_iss/C_rss minimizes Miller-induced turn-on risk.
5 (D)	Drain	Third drain terminal; increases current-carrying cross-section and reduces package inductance.
6 (D)	Drain	Fourth drain terminal; enhances thermal coupling to PCB and improves current sharing uniformity.
7 (S)	Source	Secondary source connection; lowers source inductance in high-di/dt switching applications.
8 (S)	Source	Third source terminal; provides redundant low-inductance return path for gate drive and power loops.

Key Features

Feature	Design Value
Wettable flank leads	Enables automated optical inspection (AOI) of solder fillets without X-ray, reducing manufacturing defect escape.
100% UIS tested	Each unit passes unclamped inductive switching stress test (IAS = 35.7 A, EAS = 64 mJ), ensuring ruggedness in real-world transient conditions.
Thermal resistance R_θJC	1.5°C/W - Allows 100 W power dissipation with ≤150°C temperature rise from junction to solder point.
Low Q_gd/Q_gs ratio	5.5 nC / 4.3 nC ≈ 1.28 - Reduces Miller plateau duration and improves controllability during hard switching.
Halogen- and antimony-free	Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS 3 compliance (<900 ppm Br/Cl, <1000 ppm Sb).

Applications

Automotive DC-DC Converters

LED Backlight Drivers

Use Scenario: 12 V–48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with 10 V gate drive.

Use Value: 23 mΩ R_DS(ON) and 175°C rating enable >95% efficiency and uninterrupted operation in engine bay ambient up to 125°C.

Use Scenario: Constant-current LED string driver for automotive instrument cluster and center console displays.

IC Role / Device Role / Timing Role: Low-side PWM switch controlling LED current in 100–200 kHz dimming circuits.

Use Value: Fast t_F = 5.4 ns and low Q_g minimize switching losses during high-frequency dimming, preserving display contrast and color fidelity.

Industrial Power Supplies

Server VRMs

Use Scenario: Primary-side switch in isolated 400 W AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power FET subjected to repetitive 60 V V_DS spikes and 40 A peak currents.

Use Value: 60 V BVDSS margin and 100% UIS qualification ensure reliable operation under line surge and transformer leakage energy.

Use Scenario: High-current phase-leg switch in 3-phase 40 A server voltage regulator module (VRM).

IC Role / Device Role / Timing Role: Synchronous buck high-side FET driven by integrated gate driver with 10 V logic level.

Use Value: Parallel drain/source terminals reduce package parasitic inductance, minimizing voltage overshoot and improving transient response to CPU load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH6016LPS-13	R_DS(ON) = 16 mΩ @ 10 V, but rated only to +150°C; same PowerDI5060-8 package.	Lacks 175°C rating and UIS qualification; unsuitable for under-hood automotive use.	Select when thermal ambient stays below 105°C and inductive stress is mitigated externally.
IPB180N04S4-02	40 V V_DSS, lower R_DS(ON) (1.8 mΩ), TO-263 package; higher current (180 A), no wettable flanks.	Lower voltage rating limits use to ≤36 V systems; larger footprint and manual AOI required.	Prefer for high-current, low-voltage industrial SMPS where board space and AOI capability allow TO-263 mounting.

Compared with DMTH6016LPS-13, DMNH6021SPSW trades 7 mΩ higher R_DS(ON) for 25°C higher temperature capability and production UIS validation-critical for automotive reliability. Against IPB180N04S4-02, it sacrifices current headroom and ultra-low R_DS(ON) to deliver compact, AOI-ready, 60 V-rated performance in space-constrained modules.

Availability

DMNH6021SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMNH6021SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and production-validated ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH6021SPSW supports 31 A continuous drain current at T_C = +100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under typical PCB copper layout conditions, not device failure-actual current depends on heatsinking and ambient airflow.

Does this MOSFET require a gate resistor for safe operation in 200 kHz switching?

A gate resistor of 4.7 Ω is recommended per the datasheet's dynamic characteristics test condition, balancing switching speed (t_D(OFF) = 14.2 ns) and gate oscillation suppression. Lower values increase dV/dt stress and EMI; higher values slow turn-off and raise switching losses-optimal value depends on driver strength and layout parasitics.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode exhibits V_SD = 0.75 V (typ.) at 20 A and t_RR = 21.2 ns, enabling efficient freewheeling in medium-frequency buck converters. However, for highest efficiency, external Schottky or synchronous FET control is preferred due to fixed forward drop and recovery loss.

How does the wettable flank feature impact reflow soldering profile?

The wettable flank geometry allows standard lead-free reflow profiles (peak 260°C) to form visible solder fillets on side walls, enabling automated optical inspection without X-ray. No profile modification is needed-only ensure adequate stencil aperture and paste volume to fully wet the flank surfaces per IPC-7095 guidelines.

DMNH6021SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1132 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.6W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMNH6021SPSW-13 FAQ

1.How can I place an order for DMNH6021SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6021SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6021SPSW-13 reliable?

The price and inventory of DMNH6021SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6021SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMNH6021SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6021SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6021SPSW-13?

DMNH6021SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6021SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6021SPSW-13?

For technical support, including DMNH6021SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6021SPSW-13 requirements.

6.How does Aetrix verify that DMNH6021SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6021SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6021SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMNH6021SPSW-13?

All DMNH6021SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6021SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6021SPSW-13 part is unused and in its original packaging.

Return procedure for DMNH6021SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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