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Diodes Incorporated DMNH6022SSDQ-13
- Part No.:
- DMNH6022SSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMNH6022SSDQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 7.1A/22.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,214
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Product details
Overview
DMNH6022SSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V VDSS, 27 mΩ RDS(ON) @ 10V VGS, and 22.6A continuous drain current at TC = +25°C. It operates up to +175°C, qualified to AEC-Q101, and is used in automotive engine management systems, body control electronics, and DC-DC converters.
For engineers reviewing the DMNH6022SSDQ-13 datasheet, DMNH6022SSDQ-13 pinout, DMNH6022SSDQ-13 application, or DMNH6022SSDQ-13 equivalent, key selection criteria include high-temperature operation (+175°C), low RDS(ON) at 6V gate drive, 100% unclamped inductive switching rating, SO-8 package thermal performance, and AEC-Q101 qualification with PPAP support.
Technical Context
This dual MOSFET integrates two independent N-channel devices in a single SO-8 package, sharing no internal connection between channels-each has isolated source, drain, and gate terminals. Its design emphasizes robustness in automotive environments via 100% UIS testing (22A IAS, 24mJ EAS) and stable RDS(ON) over temperature (±20% variation from −55°C to +175°C at VGS = 10V).
It delivers low switching losses with Qg = 32 nC @ 10V and Qgd = 4 nC, enabling efficient operation in synchronous buck and half-bridge topologies. The device features a body diode with tRR = 18.1 ns and QRR = 12.5 nC, supporting fast-recovery requirements in DC-DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60V drain-source voltage without breakdown, suitable for 48V automotive bus and 36V industrial rails. |
| RDS(ON) | 27 mΩ @ VGS = 10V - Enables <1.5W conduction loss at 22.6A, critical for thermally constrained engine bay layouts. |
| ID (continuous) | 22.6 A @ TC = +25°C - Supports high-current load switching in compact SO-8 footprint with external heatsinking. |
| TJ max | +175°C - Certified for under-hood applications where ambient exceeds +125°C, eliminating derating concerns at peak operating temperature. |
| Qg | 32 nC @ VGS = 10V - Reduces gate driver power demand and enables >500 kHz switching in high-efficiency DC-DC converters. |
| UIS Rating | 22 A IAS, 24 mJ EAS - Guarantees survivability during inductive load turn-off transients without snubbers in motor drivers or solenoid controls. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including HTGB, HTRB, and temperature cycling, with full PPAP documentation support. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), molded green plastic, UL 94V-0 rated, 0.074 g mass, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires standard CMOS-level drive (0–10V) with 2.0 Ω gate resistance. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; tied to local ground or low-side return path; not internally connected to S2. |
| 3 (D2) | Drain of Channel 2 | High-side or low-side power switch node for second channel; electrically isolated from D1. |
| 4 (S2) | Source of Channel 2 | Independent reference for Channel 2; enables dual low-side, dual high-side, or half-bridge configurations. |
| 5 (D1) | Drain of Channel 1 | Main power output for Channel 1; rated for 60V and 22.6A continuous with 45A pulsed capability. |
| 6 (G2) | Gate of Channel 2 | Separate gate terminal allowing asynchronous or complementary control of second MOSFET. |
| 7, 8 (GND / Exposed Pad) | Thermal & Electrical Ground | Internally connected to both sources (S1/S2); must be soldered to PCB copper pour for RθJC = 7.25°C/W thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C Junction Rating | Enables direct placement in high-ambient zones (e.g., near engines or inverters) without thermal throttling or external derating. |
| 100% Unclamped Inductive Switching | Validated to 22A/24mJ UIS events, eliminating need for external clamping circuits in solenoid or relay drivers. |
| Low RDS(ON) @ 6V VGS | 30 mΩ at 6V ensures compatibility with 5V logic-level microcontrollers and automotive 5V supply domains. |
| Low Qgd/Qg Ratio | 4 nC / 32 nC = 12.5% - Improves Miller immunity and reduces risk of shoot-through in bridge configurations. |
| AEC-Q101 + PPAP Support | Includes full qualification report, failure mode analysis, and production part approval process documentation for Tier-1 automotive programs. |
Applications
| Engine Management Systems | Body Control Modules |
|---|---|
|
Use Scenario: Driving fuel injectors and ignition coils in gasoline/diesel ECUs with tight space constraints and high ambient temperatures. IC Role / Device Role / Timing Role: Dual low-side switch controlling inductive loads; each channel independently timed for precise pulse-width modulation. Use Value: 100% UIS rating eliminates external TVS diodes; +175°C rating avoids thermal shutdown during extended idling or hot-soak conditions. |
Use Scenario: Power distribution for lighting, window lifts, and seat actuators in centralized body controllers. IC Role / Device Role / Timing Role: Dual N-channel load switch replacing mechanical relays; controlled by 5V microcontroller GPIOs. Use Value: 30 mΩ RDS(ON) @ 6V VGS minimizes voltage drop across switches, preserving LED brightness and motor torque at battery voltages down to 9V. |
| 48V Automotive DC-DC Converters | Industrial Motor Drives |
|
Use Scenario: Synchronous rectification in bidirectional 48V–12V buck-boost converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side and low-side power FET in interleaved phase legs; driven by dedicated gate drivers with dead-time control. Use Value: Low Qg (32 nC) and fast switching (tF = 8.4 ns) enable >300 kHz operation while maintaining >95% efficiency at full load. |
Use Scenario: Half-bridge gate driving for BLDC motors in HVAC blowers and power steering assist units. IC Role / Device Role / Timing Role: Dual-channel half-bridge leg (one device per leg); configured as high-side/low-side pair per phase. Use Value: Independent source terminals (S1/S2) allow Kelvin sensing and separate current limiting per channel, improving fault detection accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06NS3 | 60V, 1.4 mΩ RDS(ON) @ 10V, but single-channel in SuperSO8; higher current (60A), larger footprint. | Requires two devices for dual functionality; better for high-current single-switch needs, not space-constrained dual-channel designs. | Select when needing lower RDS(ON) per channel and board area is not constrained; not drop-in due to pinout and channel count mismatch. |
| Vishay SI7957DP | 60V, 29 mΩ RDS(ON) @ 10V, SO-8 dual N-channel, AEC-Q101 qualified, but Qg = 45 nC and TJ max = +150°C. | Higher gate charge increases driver losses; 25°C lower max junction temperature limits under-hood deployment. | Acceptable for body electronics below +150°C ambient; avoid in engine compartment or high-frequency (>200 kHz) converter designs. |
Compared with BSC014N06NS3 and SI7957DP, DMNH6022SSDQ-13 uniquely balances dual-channel integration, +175°C rating, and 32 nC gate charge in SO-8-making it optimal for space-limited, high-temperature automotive power stages where channel independence and thermal resilience are prioritized over ultra-low RDS(ON).
Availability
DMNH6022SSDQ-13 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and 48V DC-DC converters requiring stable component supply across multi-year vehicle production cycles.
Supply support for DMNH6022SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1959.
This device belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for under-hood power switching where thermal stability, transient robustness, and qualification rigor are mandatory.
FAQ
Is DMNH6022SSDQ-13 pin-compatible with other SO-8 dual N-channel MOSFETs?
No-its pinout (G1, S1, D2, S2, D1, G2, GND, GND) is specific to this device. Unlike standard dual-N SO-8s with shared source or drain configurations, DMNH6022SSDQ-13 isolates all six active terminals (two gates, two sources, two drains), requiring custom PCB layout. Verify against the official Diodes SO-8 outline drawing DS38694 Rev. 4-2 page 6 before layout.
What is the maximum allowable PCB copper area for thermal performance in the SO-8 package?
For RθJA = 74°C/W (steady-state), Diodes specifies a 1-inch square copper plate on FR-4 with 2 oz copper. Minimum recommended pad layout uses thermal vias under the exposed pad (pins 7–8) connecting to inner-layer ground planes. No maximum area is defined, but doubling the copper area beyond 1 inch² yields diminishing thermal returns (<5% improvement in RθJA).
Does DMNH6022SSDQ-13 support 5V gate drive in automotive applications?
Yes-RDS(ON) is specified at 30 mΩ @ VGS = 6V and ID = 5A, and VGS(TH) ranges from 1.0V to 3.0V. With typical 5V MCU outputs, it achieves full enhancement with margin; however, gate drive strength must supply ≥32 nC total charge within required switching time to avoid excessive transition losses.
How is the 100% UIS rating validated, and what test conditions apply?
Per datasheet Note 8, UIS is tested using L = 0.1 mH, with IAS = 22 A and EAS = 24 mJ at TJ = +25°C. Each unit undergoes 100% production UIS screening at these conditions. The rating assumes low-duty-cycle, single-pulse operation; repetitive UIS requires derating based on thermal recovery time per Figure 13's transient impedance curve.
DMNH6022SSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 7.1A, 22.6A
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32nC @ 30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2127pF @ 25V
- Power - Max:
- 1.5W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMNH6022SSDQ-13 FAQ
1.How can I place an order for DMNH6022SSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6022SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6022SSDQ-13 reliable?
The price and inventory of DMNH6022SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6022SSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMNH6022SSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6022SSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6022SSDQ-13?
DMNH6022SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6022SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6022SSDQ-13?
For technical support, including DMNH6022SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6022SSDQ-13 requirements.
6.How does Aetrix verify that DMNH6022SSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6022SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6022SSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMNH6022SSDQ-13?
All DMNH6022SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6022SSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6022SSDQ-13 part is unused and in its original packaging.
Return procedure for DMNH6022SSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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