Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMNH6042SPDQ-13

Part No.:
DMNH6042SPDQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMNH6042SPDQ-13.pdf
Description:
MOSFET NCH 60V 5.7A POWERDI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,135

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMNH6042SPDQ from Diodes Incorporated is a 60V, 24A N-channel enhancement-mode MOSFET in PowerDI®5060-8 (Type C) package, qualified to AEC-Q101 and rated for +175°C operation. It delivers 50 mΩ RDS(ON) at VGS = 10 V and 65 mΩ at 4.5 V, with 8.8 nC total gate charge and 100% unclamped inductive switching capability-designed for engine management systems and automotive DC-DC converters.

For engineers reviewing the DMNH6042SPDQ datasheet, DMNH6042SPDQ pinout, DMNH6042SPDQ application, or DMNH6042SPDQ equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(ON) at 4.5 V for 12 V gate drive compatibility, +175°C junction rating for under-hood use, and PowerDI5060-8 thermal performance with exposed drain pad.

Technical Context

This dual-drain, single-gate N-channel MOSFET integrates two parallel die in one PowerDI5060-8 (Type C) package, sharing source and gate terminals while providing independent drain connections (D1/D2). Its design supports high-current, high-temperature switching with low gate charge (8.8 nC @ 10 V) and fast switching times (tD(ON) = 3.4 ns, tF = 4.5 ns).

The device features a robust body diode with 12.9 ns reverse recovery time and 5.4 nC QRR, enabling efficient synchronous rectification in DC-DC topologies. Thermal resistance RθJC is 3.5 °C/W to the exposed drain pad, supporting high-power dissipation in compact automotive PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Withstands up to 60 V drain-source voltage without breakdown, suitable for 48 V automotive bus and boost converter stages.
RDS(ON)50 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 24 A continuous drain current (TC = +25°C).
ID (max)24 A @ TC = +25°C - Supports high-current load switching in body control modules and motor drivers.
QG8.8 nC @ VGS = 10 V - Reduces gate driver power demand and enables efficient 100–500 kHz switching in DC-DC converters.
TJ max+175°C - Certified for under-hood applications where ambient temperatures exceed +125°C.
EAS65 mJ - Withstands repetitive inductive energy spikes without failure, critical for solenoid and relay driving.
VGS(TH)1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers.

Pinout & Package

Package: PowerDI®5060-8 (Type C), surface-mount, thermally enhanced with exposed drain pad (D1/D2) on bottom side. Molded green compound, UL 94V-0 rated, MSL Level 3.

Pin/TerminalCircuit RoleDesign Meaning
D1, D2Drain (dual independent)Two separate drain terminals share internal die but allow independent routing; both connect to exposed copper pad for thermal conduction.
S1, S2Source (common)Internally tied source terminals-electrically identical and bonded to same leadframe node for low-inductance return path.
G1, G2Gate (common)Single gate input shared across both FETs; low 3.8 Ω gate resistance minimizes ringing during fast switching.

Key Features

FeatureDesign Value
AEC-Q101 qualified & PPAP capableValidated for automotive production use with full change control, IATF 16949 manufacturing, and zero defect reliability testing.
100% unclamped inductive switching (UIS)Guaranteed avalanche ruggedness up to 3.5 A/65 mJ-eliminates need for external snubbers in relay/solenoid drive circuits.
Low RDS(ON) at 4.5 V65 mΩ @ VGS = 4.5 V enables direct interface with 5 V microcontrollers and automotive MCUs without level-shifting.
Thermally optimized PowerDI5060-8RθJC = 3.5 °C/W to exposed drain pad-supports >2 W continuous power dissipation with minimal board area.
Halogen- and antimony-free "Green" constructionMeets RoHS 3 (2015/863/EU) with <900 ppm Br/Cl and <1000 ppm Sb-compliant for global automotive supply chains.

Applications

Engine Management SystemsBody Control Modules

Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated body diode for freewheeling; operates at 10–20 kHz PWM frequencies.

Use Value: 175°C rating ensures stable operation near hot engine blocks; 65 mΩ RDS(ON) at 4.5 V allows direct MCU drive without gate driver ICs.

Use Scenario: Load switching for lighting, window motors, and HVAC actuators in centralized body controllers.

IC Role / Device Role / Timing Role: Low-side power switch controlling 12 V loads up to 20 A peak; handles repeated inrush currents.

Use Value: 100% UIS rating prevents failure during motor stall or lamp cold-start surges; dual-drain layout simplifies PCB current routing.

Automotive DC-DC ConvertersStart-Stop Battery Management

Use Scenario: Synchronous rectifier in 48 V–12 V buck converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side MOSFET in synchronous rectification topology; switches at 200–500 kHz.

Use Value: 12.9 ns tRR and 5.4 nC QRR minimize dead-time losses; low QG reduces gate drive losses.

Use Scenario: Isolation and load shedding between starter battery and auxiliary 12 V system during engine cranking.

IC Role / Device Role / Timing Role: Bidirectional power switch managing charge/discharge paths with reverse polarity protection.

Use Value: Dual-drain configuration enables redundant current paths; +175°C rating survives transient heat from cranking events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F760 V, 220 A (TO-263), RDS(ON) = 2.2 mΩ @ 10 V; larger package, higher current rating.Targets high-power inverters-not pin-compatible; requires redesign for thermal and layout constraints.Select when >100 A continuous current or TO-263 mounting is required; not drop-in for PowerDI5060-8 footprint.
IPB180N06S4-0260 V, 180 A (TO-263), RDS(ON) = 2.0 mΩ @ 10 V; trench MOSFET with lower QG/RDS(ON) ratio.Designed for traction inverters; lacks AEC-Q101 documentation for body electronics use cases.Prefer for high-efficiency 48 V systems needing <2 mΩ; verify PPAP support before automotive qualification.

Compared with STL220N6F7 and IPB180N06S4-02, DMNH6042SPDQ offers optimal balance of AEC-Q101 compliance, compact PowerDI5060-8 footprint, and 4.5 V drive capability-making it uniquely suited for space-constrained, mid-power automotive body and powertrain modules.

Availability

DMNH6042SPDQ is available at Aetrix Electronics and suitable for engine management systems, body control modules, and automotive DC-DC converters requiring stable component supply, AEC-Q101 traceability, and +175°C operational reliability.

Supply support for DMNH6042SPDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMNH6042SPDQ belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature automotive subsystems-including engine control, body electronics, and 48 V/12 V power conversion-where AEC-Q101 qualification and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

At TC = +100°C, the DMNH6042SPDQ supports 17 A continuous drain current (ID) with VGS = 10 V, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and ensures safe operation in high-ambient environments like engine bays.

Does DMNH6042SPDQ support logic-level gate drive?

Yes-the device has a gate threshold voltage (VGS(TH)) of 1.0–3.0 V and delivers 65 mΩ RDS(ON) at VGS = 4.5 V, enabling direct drive from 5 V microcontrollers and automotive MCUs without external level shifters or gate drivers.

How is the dual-drain configuration used in circuit design?

D1 and D2 are electrically independent drain terminals sharing the same internal die structure. Designers route them separately to split high-current paths, reduce PCB trace inductance, or implement redundancy-e.g., one drain for main load, the other for diagnostic shunt sensing or parallel current sharing.

Is the PowerDI5060-8 (Type C) package compatible with standard reflow profiles?

Yes-the package is MSL Level 3 per J-STD-020 and qualified for standard lead-free reflow (peak 260°C). Its matte tin annealed terminals meet MIL-STD-202 solderability requirements, and the green molding compound is rated UL 94V-0 for flame resistance.

DMNH6042SPDQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
584 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMNH6042SPDQ-13 FAQ

1.How can I place an order for DMNH6042SPDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6042SPDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6042SPDQ-13 reliable?

The price and inventory of DMNH6042SPDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6042SPDQ-13 is usually 5 days.

3.What payment methods are accepted for DMNH6042SPDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6042SPDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6042SPDQ-13?

DMNH6042SPDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6042SPDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6042SPDQ-13?

For technical support, including DMNH6042SPDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6042SPDQ-13 requirements.

6.How does Aetrix verify that DMNH6042SPDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6042SPDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6042SPDQ-13 meets industry standards.

7.What is the process for return or replacement of DMNH6042SPDQ-13?

All DMNH6042SPDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6042SPDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6042SPDQ-13 part is unused and in its original packaging.

Return procedure for DMNH6042SPDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6042SPDQ-13 Tags

  • DMNH6042SPDQ-13
  • DMNH6042SPDQ-13 PDF
  • DMNH6042SPDQ-13 Datasheet
  • DMNH6042SPDQ-13 Specifications
  • DMNH6042SPDQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMNH6042SPDQ-13
  • Buy DMNH6042SPDQ-13
  • DMNH6042SPDQ-13 Price
  • DMNH6042SPDQ-13 Distributor
  • DMNH6042SPDQ-13 Supplier
  • DMNH6042SPDQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER