Diodes Incorporated DMNH6042SPS-13

Overview

DMNH6042SPS from Diodes Incorporated is a 60V, 24A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature. It delivers 50mΩ R_DS(ON) at V_GS = 10V and 65mΩ at V_GS = 4.5V, with low 8.8nC total gate charge and 100% unclamped inductive switching (UIS) rating-optimized for high-efficiency DC-DC converters in automotive body control modules.

For engineers reviewing the DMNH6042SPS datasheet, DMNH6042SPS pinout, DMNH6042SPS application, or DMNH6042SPS equivalent, key selection criteria include its AEC-Q qualified thermal robustness, low Q_g/R_DS(ON) trade-off at 4.5V drive, and exposed-drain thermal path enabling 2.9W power dissipation on 2oz copper PCBs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching speed. Its 3.5°C/W R_θJC enables direct thermal coupling to PCB copper, and the 100% UIS rating ensures reliability under inductive load transients common in automotive solenoid drivers.

The device features a gate threshold voltage of 1.0–3.0V, supporting both 3.3V and 5V logic-level gate drive, and exhibits normalized R_DS(ON) variation of ≤2.4× across –55°C to +175°C-critical for engine bay and under-hood applications where ambient temperatures exceed 125°C.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad for low thermal resistance and high-current capability. Molded green compound, RoHS-compliant, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMNH6042SPSQ, the base DMNH6042SPS offers identical performance with standard industrial qualification-ideal for pre-production validation and non-PPAP automotive subsystems. Against DMTH6016LPS-13, it trades higher R_DS(ON) for superior thermal robustness and current capacity, making it preferred for under-hood and high-reliability applications.

Availability

DMNH6042SPS is available at Aetrix Electronics and suitable for automotive body control modules, engine management systems, and industrial DC-DC converters requiring stable component supply and guaranteed long-term availability.

Supply support for DMNH6042SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMNH6042SPS belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and body electronics-emphasizing AEC-Q qualification, thermal resilience, and robust UIS performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMNH6042SPS supports 17A continuous drain current at T_C = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by package construction and PCB layout-achievable using 2oz copper with thermal vias to inner layers and an exposed drain pad soldered to ≥1 inch² copper area.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies R_G = 6Ω for dynamic parameter measurements. For 300–500kHz DC-DC applications, a 5–10Ω series resistor between driver and gate pin minimizes overshoot while preserving switching speed and EMI performance.

Can DMNH6042SPS be used in high-side switch configurations?

Yes-it supports high-side switching when paired with a gate driver capable of providing V_GS ≥ 10V relative to the source node. Its ±20V V_GSS rating and 60V V_DSS allow operation in 12V/24V automotive high-side loads, though careful attention to bootstrap capacitor sizing and driver rise/fall times is required to maintain safe V_GS margins.

How does the PowerDI5060-8 package compare thermally to SO-8 or TO-252?

The PowerDI5060-8 provides 3.5°C/W R_θJC, significantly better than SO-8 (≈50°C/W) and competitive with TO-252 (≈4.5°C/W), due to its large exposed drain pad and optimized internal leadframe. On 2oz FR-4 with thermal bias, its R_θJA drops to 51°C/W-outperforming SO-8 by >40% and enabling 2.9W dissipation versus ~1.2W for SO-8 under identical conditions.