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Diodes Incorporated DMNH6042SSD-13
- Part No.:
- DMNH6042SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMNH6042SSD-13.pdf
- Description:
- MOSFET 2N-CH 60V 16.7A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,740
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Product details
Overview
DMNH6042SSD-13 from Diodes Incorporated is a 60V dual N-channel MOSFET in SO-8 package, rated for 175°C operation, with RDS(ON) = 50 mΩ @ VGS = 10 V and 65 mΩ @ VGS = 4.5 V, delivering 16.7 A continuous drain current at TC = +25°C. It is qualified to AEC-Q101 and designed for high-reliability automotive power management including engine control units and body electronics.
For engineers reviewing the DMNH6042SSD-13 datasheet, DMNH6042SSD-13 pinout, DMNH6042SSD-13 application, or DMNH6042SSD-13 equivalent, key selection criteria include its 175°C junction rating, low gate charge (Qg = 8.8 nC @ 10 V), 100% unclamped inductive switching capability, and SO-8 thermal performance under pulsed and steady-state conditions.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package with independent source, gate, and drain terminals per channel. Its design emphasizes low conduction loss (RDS(ON)) and fast switching (tF = 4.5 ns, tD(OFF) = 10.1 ns) while maintaining robust avalanche energy rating (EAS = 65 mJ).
The device features a gate threshold voltage range of 1.0–3.0 V and exhibits normalized RDS(ON) variation ≤2.4× across –55°C to +175°C. Its Ciss = 584 pF and Crss = 24 pF support stable high-frequency DC-DC converter operation with minimal Miller effect.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage without breakdown. |
| RDS(ON) @ 10 V | 50 mΩ - Enables <1 W conduction loss at 14.6 A in typical automotive load switch applications. |
| Qg @ 10 V | 8.8 nC - Reduces gate drive power and enables efficient 500 kHz+ switching in synchronous buck converters. |
| TJ max | +175°C - Supports placement near hot engine compartments without derating in AEC-Q101-compliant systems. |
| EAS | 65 mJ - Sustains repetitive inductive turn-off stress in motor drivers and solenoid controls without failure. |
| ID (TC = 25°C) | 16.7 A - Delivers high-current capability in compact SO-8 footprint with RθJC = 7.25°C/W. |
| Ciss | 584 pF - Defines input capacitance for gate driver sizing and loop stability analysis in high-side configurations. |
Pinout & Package
Package: SO-8 surface-mount plastic package with matte tin annealed terminals, UL 94V-0 rated molding compound, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | Main high-current path for first MOSFET; connected to internal leadframe for low-inductance thermal path. |
| 2 (S1) | Source of Channel 1 | Reference node for Channel 1; electrically isolated from S2 to enable independent half-bridge or dual-switch topologies. |
| 3 (G1) | Gate of Channel 1 | Control input for Channel 1; requires 1.0–3.0 V threshold and 8.8 nC total charge for full enhancement. |
| 4 (D2) | Drain of Channel 2 | Drain terminal of second MOSFET; symmetrical to D1 but separate die-no internal connection between D1 and D2. |
| 5 (S2) | Source of Channel 2 | Independent source return for Channel 2; enables floating or common-source dual-switch configurations. |
| 6 (G2) | Gate of Channel 2 | Isolated gate control for Channel 2; identical electrical characteristics to G1 but electrically separate. |
| 7, 8 (Exposed Pad) | Thermal & Electrical Common Drain | Internally tied to both D1 and D2; serves as primary heat sink path and must be soldered to PCB copper for RθJC = 7.25°C/W. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive underhood use with temperature cycling, HTRB, and UIS testing per Rev G requirements. |
| 100% UIS tested | Each unit passes unclamped inductive switching at IAS = 3.5 A and L = 10 mH-ensuring field reliability in relay/snubberless designs. |
| Low Qg/Qgd ratio | Qgd/Qg = 20.5% - Minimizes Miller-induced shoot-through risk and improves hard-switching efficiency. |
| Green compound & RoHS | Halogen-free (<900 ppm Br/Cl), antimony-free (<1000 ppm), and lead-free per EU Directive 2011/65/EU. |
| SO-8 thermal bias support | Rated PD = 2.1 W with 2 oz copper thermal pad-enables >15 A continuous operation in automotive PCB layouts. |
Applications
| Engine Control Unit (ECU) Power Distribution | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Switching 12 V battery power to fuel injectors, ignition coils, and HVAC actuators in modern gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Dual-channel high-side load switch enabling independent control of two critical loads with fast turn-on (tD(ON) = 3.4 ns) and low RDS(ON). Use Value: Eliminates need for discrete dual-MOSFET layouts while sustaining 175°C ambient and surviving load dump transients up to 60 V. |
Use Scenario: Managing power to door locks, window lifts, mirror adjusters, and interior lighting in centralized BCMs. IC Role / Device Role / Timing Role: Dual N-channel load switch operating in common-source configuration with external high-side gate drivers. Use Value: Reduces BOM count by replacing two discrete SO-8 MOSFETs; low Qg cuts gate driver losses by >30% vs. legacy 60 V parts. |
| 48 V Mild Hybrid DC-DC Converter | On-Board Charger (OBC) Auxiliary Supply |
|
Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with matched dual channels sharing thermal path for balanced current sharing. Use Value: 50 mΩ RDS(ON) at 10 V reduces conduction loss by 22% versus 65 mΩ alternatives, improving converter efficiency above 95%. |
Use Scenario: Isolated auxiliary power supply for gate drivers and MCU in 3.3 kW–6.6 kW OBCs using SiC main switches. IC Role / Device Role / Timing Role: Primary-side active clamp or secondary-side synchronous rectifier in flyback or forward topologies. Use Value: 175°C rating allows mounting on same heatsink as main SiC module; EAS = 65 mJ withstands reflected voltage spikes during ZVS transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMNH6042SSDQ-13 | Identical silicon and SO-8 package, but fully AEC-Q101 certified with extended test reporting (HTOL, ESD, etc.). | Required for production automotive programs needing full PPAP documentation and zero-defect traceability. | Select when OEM compliance mandates full AEC-Q101 certification-not just qualification-and audit-ready records are required. |
| IPD20N06S4L-13 | 60 V, 20 A, RDS(ON) = 4.5 mΩ @ 10 V, but single-channel in TO-252; no dual-channel integration or SO-8 footprint. | Suitable only for single-load applications; requires two devices and larger PCB area to match dual functionality. | Choose only if lower RDS(ON) outweighs board space penalty and dual-channel coordination is unnecessary. |
Compared with DMNH6042SSDQ-13, the base DMNH6042SSD-13 offers identical electrical and thermal performance but lacks full AEC-Q101 production documentation; versus IPD20N06S4L-13, it trades 15.5 mΩ higher RDS(ON) for integrated dual-channel control, SO-8 compactness, and automotive-grade ruggedness.
Availability
DMNH6042SSD-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply across automotive Tier 1 production, industrial control retrofit, and EV auxiliary power design cycles.
Supply support for DMNH6042SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMNH6042SSD belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for under-hood automotive power switching where thermal resilience, avalanche robustness, and long-term parametric stability are mandatory.
FAQ
What is the maximum continuous drain current for DMNH6042SSD-13 at 100°C case temperature?
At TC = +100°C, the maximum continuous drain current is 14 A per channel, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package with standard 2 oz copper thermal pad layout and accounts for RDS(ON) increase with junction temperature.
Can DMNH6042SSD-13 be used in a synchronous buck converter as both high-side and low-side switches?
No-DMNH6042SSD-13 contains two N-channel MOSFETs only, with no integrated bootstrap diode or level-shifting circuitry. It can serve as dual low-side switches or one high-side + one low-side with external gate drivers and bootstrap capacitors, but not as a self-contained half-bridge.
Is the exposed pad (pins 7–8) electrically connected to the drains?
Yes-the exposed pad is internally connected to both D1 and D2 terminals and must be soldered to a PCB thermal pad tied to system ground or drain potential. It is not isolated and forms the primary thermal conduction path with RθJC = 7.25°C/W.
Does DMNH6042SSD-13 support 3.3 V logic-level gate drive?
It can be partially enhanced at 3.3 V (VGS(TH) min = 1.0 V), but RDS(ON) rises sharply below 4.5 V. At VGS = 3.3 V, typical RDS(ON) exceeds 100 mΩ-unsuitable for high-current switching. Use ≥4.5 V gate drive for reliable operation.
DMNH6042SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 16.7A (Tc)
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 584pF @ 25V
- Power - Max:
- 2.1W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
DMNH6042SSD-13 FAQ
1.How can I place an order for DMNH6042SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMNH6042SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMNH6042SSD-13 reliable?
The price and inventory of DMNH6042SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6042SSD-13 is usually 5 days.
3.What payment methods are accepted for DMNH6042SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6042SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMNH6042SSD-13?
DMNH6042SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMNH6042SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMNH6042SSD-13?
For technical support, including DMNH6042SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6042SSD-13 requirements.
6.How does Aetrix verify that DMNH6042SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMNH6042SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6042SSD-13 meets industry standards.
7.What is the process for return or replacement of DMNH6042SSD-13?
All DMNH6042SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6042SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMNH6042SSD-13 part is unused and in its original packaging.
Return procedure for DMNH6042SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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