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Diodes Incorporated DMNH6042SSDQ-13

Part No.:
DMNH6042SSDQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMNH6042SSDQ-13.pdf
Description:
MOSFET 2N-CH 60V 16.7A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,811

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Product details

Overview

DMNH6042SSDQ-13 from Diodes Incorporated is a dual N-channel 60V MOSFET in SO-8 package, rated for 175°C operation and qualified to AEC-Q101. It delivers RDS(ON) of 50 mΩ @ VGS = 10 V (16.7 A at TC = +25°C) and 65 mΩ @ VGS = 4.5 V (14.6 A), with 100% unclamped inductive switching capability-used in automotive engine management and body control modules.

For engineers reviewing the DMNH6042SSDQ-13 datasheet, DMNH6042SSDQ-13 pinout, DMNH6042SSDQ-13 application, or DMNH6042SSDQ-13 equivalent, key selection criteria include high-temperature reliability (TJ = –55°C to +175°C), low gate charge (QG = 8.8 nC @ 10 V), and AEC-Q101 qualification for automotive power switching.

Technical Context

This dual N-channel MOSFET integrates two independent 60 V, 175°C-rated silicon die in a single SO-8 package, enabling compact half-bridge or dual-switch topologies. Its gate threshold voltage (1.0–3.0 V) supports 3.3 V and 4.5 V logic-level drive, while low QG (4.2 nC @ 4.5 V) and QGD (1.8 nC) reduce switching losses in DC-DC converters.

The device features a robust body diode with tRR = 12.9 ns and QRR = 5.4 nC, optimized for synchronous rectification. Thermal resistance RθJC = 7.25 °C/W enables high-power density mounting on thermally enhanced PCBs per Note 7 layout.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands up to 60 V drain-source voltage without breakdown, suitable for 48 V automotive bus systems.
RDS(ON) 50 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 14 A, critical for thermal management in confined engine bay spaces.
ID (max) 16.7 A @ TC = +25°C - Supports high-current loads such as fuel injectors or solenoid drivers in engine control units.
QG 8.8 nC @ VGS = 10 V - Reduces gate driver power demand and switching transition time in high-frequency (>100 kHz) DC-DC stages.
TJ range –55°C to +175°C - Certified for under-hood operation where ambient temperatures exceed 125°C, per AEC-Q101 stress testing.
Package SO-8 - Standard surface-mount footprint compatible with automated assembly and thermal pad routing per JESD51-7.

Pinout & Package

SO-8 package with exposed thermal pad (non-electrical); molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 4, 5, 8 Drain 1 / Drain 2 Power output terminals for each MOSFET channel; pins 1 & 4 share Drain 1, pins 5 & 8 share Drain 2 (per top-view diagram).
2, 7 Source 1 / Source 2 Return paths for respective channels; pin 2 = S1, pin 7 = S2 - electrically isolated for independent switching control.
3, 6 Gate 1 / Gate 2 Control inputs; pin 3 = G1, pin 6 = G2 - low input capacitance (Ciss = 584 pF) eases gate driver design.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive use with PPAP documentation support - eliminates requalification effort for Tier 1 suppliers.
100% UIS tested Each unit passes unclamped inductive switching stress at IAS = 3.5 A, L = 10 mH - ensures robustness against load dump transients.
Low RDS(ON) @ 4.5 V 65 mΩ at VGS = 4.5 V - enables direct drive from 5 V microcontrollers without level-shifting circuitry.
Green construction Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), RoHS-compliant - meets EU ELV and OEM environmental mandates.

Applications

Engine Management Systems Body Control Modules

Use Scenario: Driving fuel injectors and ignition coils in gasoline/diesel ECUs under hood temperatures up to 150°C.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling pulsed 12 V/48 V loads with precise duty cycle and fast turn-off.

Use Value: 175°C rating prevents thermal shutdown during sustained high-load operation; low QG enables sub-µs switching for precise fuel metering.

Use Scenario: Controlling door locks, window lift motors, and lighting relays in centralized body controllers.

IC Role / Device Role / Timing Role: Dual-channel load switch replacing mechanical relays to reduce size, noise, and contact wear.

Use Value: Dual N-channel topology allows compact half-bridge implementation; AEC-Q101 qualification ensures 15+ year field reliability.

DC-DC Converters Start-Stop Systems

Use Scenario: Synchronous rectification in 12 V → 5 V/3.3 V buck converters powering ADAS sensors and infotainment processors.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, operating at 200–500 kHz with body diode recovery <13 ns.

Use Value: Low RDS(ON) and QRR = 5.4 nC minimize conduction and reverse recovery losses, improving efficiency >92% at full load.

Use Scenario: Managing battery-to-bus power transfer during engine cranking and restart events in 12 V start-stop architectures.

IC Role / Device Role / Timing Role: Bidirectional power switch isolating starter battery from auxiliary loads during voltage sag (<6 V).

Use Value: 60 V VDSS withstands load dump spikes up to 65 V; 100% UIS rating prevents failure during repeated cranking cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN6042SSDQ-13 Same die, identical specs - Diodes' alternate part number with identical marking and qualification. No functional difference; used interchangeably in BOMs requiring alternate sourcing codes. Select when supply chain diversification within same manufacturer is required.
IPB80N06S4-02 Single N-channel 60 V, 80 A TO-263; higher current but larger package and no dual configuration. Requires two devices and extra PCB area to replicate dual functionality; lacks integrated dual-channel timing alignment. Choose only if discrete high-current handling outweighs space and layout complexity penalties.

Compared with DMNH6042SSDQ-13, DMN6042SSDQ-13 offers identical performance with alternate logistics coding, while IPB80N06S4-02 trades integration and thermal density for raw current capacity-making the DMNH6042SSDQ-13 optimal for space-constrained, thermally aggressive dual-switch automotive nodes.

Availability

DMNH6042SSDQ-13 is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply across extended temperature ranges and automotive lifecycle commitments.

Supply support for DMNH6042SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, and consumer markets.

This device belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for high-reliability power switching in under-hood and chassis-mounted electronic control units.

FAQ

Is DMNH6042SSDQ-13 suitable for 48 V mild-hybrid vehicle applications?

Yes. Its 60 V VDSS, 175°C junction rating, and AEC-Q101 qualification make it appropriate for 48 V bus switching in mild-hybrid systems. The RDS(ON) of 50 mΩ @ 10 V ensures <0.7 W conduction loss at 12 A, supporting continuous operation in thermally constrained locations near the powertrain.

What is the thermal pad connection requirement for SO-8 package?

The SO-8 package has an exposed thermal pad (pin 4 per standard SO-8 outline) that must be soldered to a copper thermal pad on the PCB using a minimum 4×4 mm² land pattern with ≥4 thermal vias to inner ground planes. This achieves RθJA = 72 °C/W (Note 7), essential for sustaining 14.6 A at TC = +100°C.

Does DMNH6042SSDQ-13 support logic-level gate drive from 3.3 V microcontrollers?

No. While VGS(TH) starts at 1.0 V, RDS(ON) rises sharply below 4.5 V - at 3.3 V, typical RDS(ON) exceeds 120 mΩ, causing excessive conduction loss. It requires ≥4.5 V gate drive for reliable 14.6 A operation; use a dedicated gate driver or level shifter with 3.3 V MCU outputs.

How is the dual-channel isolation verified in production?

Each channel undergoes independent high-potential (Hi-Pot) testing at 1200 V for 1 second between Drain1–Drain2, Drain–Source, and Gate–Source terminals. Inter-channel isolation resistance is guaranteed >109 Ω at 100 V, ensuring no crosstalk or latch-up in fault conditions like shorted loads or ESD events.

DMNH6042SSDQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
16.7A (Tc)
Rds On (Max) @ Id, Vgs:
50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
584pF @ 25V
Power - Max:
2.1W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMNH6042SSDQ-13 FAQ

1.How can I place an order for DMNH6042SSDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMNH6042SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMNH6042SSDQ-13 reliable?

The price and inventory of DMNH6042SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMNH6042SSDQ-13 is usually 5 days.

3.What payment methods are accepted for DMNH6042SSDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMNH6042SSDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMNH6042SSDQ-13?

DMNH6042SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMNH6042SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMNH6042SSDQ-13?

For technical support, including DMNH6042SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMNH6042SSDQ-13 requirements.

6.How does Aetrix verify that DMNH6042SSDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMNH6042SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMNH6042SSDQ-13 meets industry standards.

7.What is the process for return or replacement of DMNH6042SSDQ-13?

All DMNH6042SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMNH6042SSDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMNH6042SSDQ-13 part is unused and in its original packaging.

Return procedure for DMNH6042SSDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMNH6042SSDQ-13 Tags

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