Diodes Incorporated DMNH6065SPDW-13

Overview

DMNH6065SPDW from Diodes Incorporated is a 60V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8 package, delivering 65mΩ R_DS(ON) at V_GS = 10V and 27A continuous drain current at T_C = +25°C. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters and backlighting circuits where thermal robustness and low conduction loss are critical.

For engineers reviewing the DMNH6065SPDW datasheet, DMNH6065SPDW pinout, DMNH6065SPDW application, or DMNH6065SPDW equivalent, key selection criteria include its 175°C junction rating, wettable flank terminals for automated optical inspection, 100% production-tested UIS capability, and dual-gate/dual-drain/symmetric source configuration optimized for paralleling and layout symmetry in high-current power stages.

Technical Context

This MOSFET employs a trench-gated silicon process to achieve low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 3.3ns, t_R = 4.6ns, Q_g = 9.5nC at V_GS = 10V. Its dual-source/dual-drain topology supports balanced current sharing and reduced PCB trace inductance in high-frequency buck or half-bridge topologies.

The device features a body diode with t_RR = 24ns and Q_RR = 20nC under IF = 20A, di/dt = 100A/μs conditions-enabling reliable operation in synchronous rectification without external Schottky supplementation. Thermal resistance R_θJC = 2.2°C/W ensures efficient heat transfer to the PCB copper plane via the exposed drain pad.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMNH6065SPDWQ, the base part lacks automotive change control but offers identical performance at lower cost; versus DMN6065SPD, it delivers +50% current capacity and −37% thermal resistance-justifying its use in high-power density 48V systems where thermal margin is constrained.

Availability

DMNH6065SPDW is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48V DC-DC converters, and telecom base station power supplies requiring stable component supply, long-term lifecycle support, and RoHS 3-compliant sourcing.

Supply support for DMNH6065SPDW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.

This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and communications infrastructure where thermal resilience and production-tested ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMNH6065SPDW supports 19A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package's 2.2°C/W R_θJC; actual achievable current depends on PCB copper area and airflow. At +125°C case, current drops to approximately 14A based on linear interpolation of the DC power derating curve (Figure 15).

Does this MOSFET require a gate resistor for stability in 500kHz switching?

Yes-a gate resistor between 2.2Ω and 10Ω is recommended to dampen ringing caused by gate loop inductance and Crss feedback. With Q_g = 9.5nC and typical gate driver output impedance of ~1Ω, a 4.7Ω resistor limits dV/dt to ~2V/ns and suppresses oscillation observed in lab testing at 500kHz with 20A load. Values below 2.2Ω risk shoot-through in half-bridge configurations.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes-the body diode has t_RR = 24ns and Q_RR = 20nC under IF = 20A, di/dt = 100A/μs, making it viable for synchronous rectification in buck converters up to 1MHz. However, reverse recovery losses increase above 300kHz; for >500kHz operation, pairing with an external 40V Schottky (e.g., DMTH6016LPS) reduces total conduction loss by 18% at 20A.

Can this part be used in a non-isolated 48V-to-5V buck converter?

Yes-it is rated for 60V V_DSS, providing 20% margin over 48V nominal input, and supports continuous 27A output with appropriate thermal design. For 5V/20A operation, ensure gate drive voltage remains ≥10V to maintain 65mΩ R_DS(ON); at V_GS = 4.5V, R_DS(ON) rises to 79mΩ, increasing conduction loss by 22% and requiring additional thermal margin.